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Part Number | TH58NYG3S0HBAI4 |
OEMstron Part # | TH58NYG3S0HBAI4 |
Manufacturer | Toshiba Memory America, Inc. |
Category | Semiconductors › Memory ICs › Memory |
Description | 8GB SLC NAND 24NM BGA 9X11 3.3V |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TH58NYG3S0HBAI4 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
Shipping | ![]() |
TH58NYG3S0HBAI4 Specifications
Part Number | TH58NYG3S0HBAI4 | |
Brand | Toshiba Memory America, Inc. | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Memory ICs | |
Subcategory | Memory | |
Manufacturer | Toshiba Memory America, Inc. | |
Series | - | |
Memory Type | Non-Volatile | |
Memory Format | FLASH | |
Technology | FLASH - NAND (SLC) | |
Memory Size | 8Gb (1G x 8) | |
Memory Interface | Parallel | |
Clock Frequency | - | |
Write Cycle Time - Word, Page | 25ns | |
Access Time | 25ns | |
Voltage - Supply | 1.7V ~ 1.95V | |
Operating Temperature | -40°C ~ 85°C (TA) | |
Mounting Type | Surface Mount | |
Package / Case | 63-VFBGA | |
Supplier Device Package | 63-TFBGA (9x11) |
TH58NYG3S0HBAI4 Documents

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