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Part Number | TPC8212-H(TE12LQ,M |
OEMstron Part # | TPC8212-H-TE12LQ-M |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
Description | MOSFET 2N-CH 30V 6A SOP8 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | TPC8212-H(TE12LQ,M PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 20 - Jan 25 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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TPC8212-H(TE12LQ Specifications
Part Number | TPC8212-H(TE12LQ,M | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Arrays | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | - | |
FET Type | 2 N-Channel (Dual) | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 6A | |
Rds On (Max) @ Id, Vgs | 21mOhm @ 3A, 10V | |
Vgs(th) (Max) @ Id | 2.3V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V | |
Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 10V | |
Power - Max | 450mW | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | 8-SOIC (0.173", 4.40mm Width) | |
Supplier Device Package | 8-SOP (5.5x6.0) |
TPC8212-H(TE12LQ,M Documents
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Part Number | Description | Stock |
TPC8212-H(TE12LQ,M D# TPC8212-H(TE12LQ,M-ND Toshiba America Electronic Components |
MOSFET 2N-CH 30V 6A SOP8 |
Limited Supply - Call |
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