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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Arrays
Records 11,588
Page 206/387
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Configuration | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 20V 200A 3TOWER |
In Stock369 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 20V |
Current - Average Rectified (Io) (per Diode): 200A (DC) |
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 20V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 30V 200A 3TOWER |
In Stock189 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 30V |
Current - Average Rectified (Io) (per Diode): 200A (DC) |
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 20V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 30V 200A 3TOWER |
In Stock290 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 30V |
Current - Average Rectified (Io) (per Diode): 200A (DC) |
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 20V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 45V 200A 3TOWER |
In Stock355 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 45V |
Current - Average Rectified (Io) (per Diode): 200A (DC) |
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 20V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 45V 200A 3TOWER |
In Stock301 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 45V |
Current - Average Rectified (Io) (per Diode): 200A (DC) |
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 20V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 60V 200A 3TOWER |
In Stock192 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 60V |
Current - Average Rectified (Io) (per Diode): 200A (DC) |
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 20V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 60V 200A 3TOWER |
In Stock461 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 60V |
Current - Average Rectified (Io) (per Diode): 200A (DC) |
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 20V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 80V 200A 3TOWER |
In Stock219 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 80V |
Current - Average Rectified (Io) (per Diode): 200A (DC) |
Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 20V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 80V 200A 3TOWER |
In Stock431 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 80V |
Current - Average Rectified (Io) (per Diode): 200A (DC) |
Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 20V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE SCHOTTKY 150V 100A 2 TOWER |
In Stock436 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 150V |
Current - Average Rectified (Io) (per Diode): 100A |
Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 3mA @ 150V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Twin Tower |
Supplier Device Package: Twin Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE SCHOTTKY 200V 100A 2 TOWER |
In Stock251 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io) (per Diode): 100A |
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 3mA @ 200V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Twin Tower |
Supplier Device Package: Twin Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE SCHOTTKY 200V 100A 2 TOWER |
In Stock395 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io) (per Diode): 100A |
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 3mA @ 200V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Twin Tower |
Supplier Device Package: Twin Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE SCHOTTKY 150V 100A 3 TOWER |
In Stock452 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 150V |
Current - Average Rectified (Io) (per Diode): 100A |
Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 150V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE SCHOTTKY 150V 100A 3 TOWER |
In Stock274 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 150V |
Current - Average Rectified (Io) (per Diode): 100A |
Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 150V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE SCHOTTKY 200V 100A 3 TOWER |
In Stock451 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io) (per Diode): 100A |
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 200V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE SCHOTTKY 200V 100A 3 TOWER |
In Stock121 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io) (per Diode): 100A |
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 200V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE GEN 1.2KV 150A 3 TOWER |
In Stock170 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Series Connection |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io) (per Diode): 150A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 150A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 10µA @ 1200V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE GEN 1.4KV 150A 3 TOWER |
In Stock319 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Series Connection |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1400V |
Current - Average Rectified (Io) (per Diode): 150A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 150A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 10µA @ 1400V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE GEN 1.6KV 150A 3 TOWER |
In Stock298 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Series Connection |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1600V |
Current - Average Rectified (Io) (per Diode): 150A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 150A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 10µA @ 1600V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE GEN PURP 600V 150A 3 TOWER |
In Stock321 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Series Connection |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io) (per Diode): 150A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 150A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 10µA @ 600V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE GEN PURP 800V 150A 3 TOWER |
In Stock367 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Series Connection |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 800V |
Current - Average Rectified (Io) (per Diode): 150A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 150A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 10µA @ 800V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
|
IXYS |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 400V 880A Y4-M6 |
In Stock358 More on Order |
|
Series: HiPerFRED™ |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io) (per Diode): 880A |
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 400A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 220ns |
Current - Reverse Leakage @ Vr: 6mA @ 400V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Y4-M6 |
Supplier Device Package: Y4-M6 |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 50V 100A 2TOWER |
In Stock322 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io) (per Diode): 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 75ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Twin Tower |
Supplier Device Package: Twin Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 50V 100A 2TOWER |
In Stock266 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io) (per Diode): 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 75ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Twin Tower |
Supplier Device Package: Twin Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 100V 100A 2TOWER |
In Stock395 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io) (per Diode): 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 75ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Twin Tower |
Supplier Device Package: Twin Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 100V 100A 2TOWER |
In Stock189 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io) (per Diode): 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 75ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Twin Tower |
Supplier Device Package: Twin Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 200V 100A 2TOWER |
In Stock268 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io) (per Diode): 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 75ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Twin Tower |
Supplier Device Package: Twin Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 200V 100A 2TOWER |
In Stock223 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io) (per Diode): 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 75ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Twin Tower |
Supplier Device Package: Twin Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 400V 100A 2TOWER |
In Stock372 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io) (per Diode): 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 90ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Twin Tower |
Supplier Device Package: Twin Tower |
|
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 400V 100A 2TOWER |
In Stock228 More on Order |
|
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io) (per Diode): 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 90ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Twin Tower |
Supplier Device Package: Twin Tower |