Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 50V 1A SUB SMA |
In Stock435 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 50ns |
Current - Reverse Leakage @ Vr: 5µA @ 50V |
Capacitance @ Vr, F: 20pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 100V 1A SUB SMA |
In Stock340 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 50ns |
Current - Reverse Leakage @ Vr: 5µA @ 100V |
Capacitance @ Vr, F: 20pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 100V 1A SUB SMA |
In Stock193 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 50ns |
Current - Reverse Leakage @ Vr: 5µA @ 100V |
Capacitance @ Vr, F: 20pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 100V 1A SUB SMA |
In Stock340 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 50ns |
Current - Reverse Leakage @ Vr: 5µA @ 100V |
Capacitance @ Vr, F: 20pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 1A SUB SMA |
In Stock400 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 50ns |
Current - Reverse Leakage @ Vr: 5µA @ 200V |
Capacitance @ Vr, F: 20pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 1A SUB SMA |
In Stock406 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 50ns |
Current - Reverse Leakage @ Vr: 5µA @ 200V |
Capacitance @ Vr, F: 20pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 1A SUB SMA |
In Stock330 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 50ns |
Current - Reverse Leakage @ Vr: 5µA @ 200V |
Capacitance @ Vr, F: 20pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 300V 1A SUB SMA |
In Stock159 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 300V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 50ns |
Current - Reverse Leakage @ Vr: 5µA @ 300V |
Capacitance @ Vr, F: 20pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 300V 1A SUB SMA |
In Stock434 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 300V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 50ns |
Current - Reverse Leakage @ Vr: 5µA @ 300V |
Capacitance @ Vr, F: 20pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 300V 1A SUB SMA |
In Stock295 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 300V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 50ns |
Current - Reverse Leakage @ Vr: 5µA @ 300V |
Capacitance @ Vr, F: 20pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 1A SUB SMA |
In Stock173 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 50ns |
Current - Reverse Leakage @ Vr: 5µA @ 400V |
Capacitance @ Vr, F: 20pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 1A SUB SMA |
In Stock385 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 50ns |
Current - Reverse Leakage @ Vr: 5µA @ 400V |
Capacitance @ Vr, F: 20pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 1A SUB SMA |
In Stock110 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 50ns |
Current - Reverse Leakage @ Vr: 5µA @ 400V |
Capacitance @ Vr, F: 20pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 1A SUB SMA |
In Stock231 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 75ns |
Current - Reverse Leakage @ Vr: 5µA @ 600V |
Capacitance @ Vr, F: 15pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 1A SUB SMA |
In Stock460 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 75ns |
Current - Reverse Leakage @ Vr: 5µA @ 600V |
Capacitance @ Vr, F: 15pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 1A SUB SMA |
In Stock471 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 75ns |
Current - Reverse Leakage @ Vr: 5µA @ 600V |
Capacitance @ Vr, F: 15pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 800V 1A SUB SMA |
In Stock208 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 800V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 75ns |
Current - Reverse Leakage @ Vr: 5µA @ 800V |
Capacitance @ Vr, F: 15pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 800V 1A SUB SMA |
In Stock174 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 800V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 75ns |
Current - Reverse Leakage @ Vr: 5µA @ 800V |
Capacitance @ Vr, F: 15pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 800V 1A SUB SMA |
In Stock379 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 800V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 75ns |
Current - Reverse Leakage @ Vr: 5µA @ 800V |
Capacitance @ Vr, F: 15pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1A SUB SMA |
In Stock281 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): - |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 75ns |
Current - Reverse Leakage @ Vr: 5µA @ 1000V |
Capacitance @ Vr, F: 15pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1A SUB SMA |
In Stock456 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): - |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 75ns |
Current - Reverse Leakage @ Vr: 5µA @ 1000V |
Capacitance @ Vr, F: 15pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1A SUB SMA |
In Stock358 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): - |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 75ns |
Current - Reverse Leakage @ Vr: 5µA @ 1000V |
Capacitance @ Vr, F: 15pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 50V 800MA SUB SMA |
In Stock411 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 50V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 50V 800MA SUB SMA |
In Stock414 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 50V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 50V 800MA SUB SMA |
In Stock188 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 50V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 50V 800MA SUB SMA |
In Stock308 More on Order |
|
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 50V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 50V 800MA SUB SMA |
In Stock307 More on Order |
|
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 50V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 50V 800MA SUB SMA |
In Stock207 More on Order |
|
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 50V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 100V 800MA SUBSMA |
In Stock321 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 100V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 100V 800MA SUBSMA |
In Stock229 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 100V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |