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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 240/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Rohm Semiconductor |
Diodes & Rectifiers - Rectifiers - Single DIODE SCHOTTKY 650V 10A TO263AB |
In Stock137 More on Order |
|
Series: Automotive, AEC-Q101 |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 650V |
Current - Average Rectified (Io): 10A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 10A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 200µA @ 600V |
Capacitance @ Vr, F: 365pF @ 1V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: TO-263AB |
Operating Temperature - Junction: 175°C (Max) |
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ON Semiconductor |
Diodes & Rectifiers - Rectifiers - Single 650V 10A SIC SBD GEN1.5 |
In Stock439 More on Order |
|
Series: Automotive, AEC-Q101 |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 650V |
Current - Average Rectified (Io): 13.5A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 40µA @ 650V |
Capacitance @ Vr, F: 424pF @ 1V, 100kHz |
Mounting Type: Surface Mount |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: D-PAK (TO-252) |
Operating Temperature - Junction: -55°C ~ 175°C |
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Semtech |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 800V 3A AXIAL |
In Stock139 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 800V |
Current - Average Rectified (Io): 5A |
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 2µs |
Current - Reverse Leakage @ Vr: 1µA @ 800V |
Capacitance @ Vr, F: 92pF @ 5V, 1MHz |
Mounting Type: Through Hole |
Package / Case: Axial |
Supplier Device Package: Axial |
Operating Temperature - Junction: - |
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Semtech |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 5A AXIAL |
In Stock313 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 5A |
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 2µs |
Current - Reverse Leakage @ Vr: 1µA @ 600V |
Capacitance @ Vr, F: 92pF @ 5V, 1MHz |
Mounting Type: Through Hole |
Package / Case: Axial |
Supplier Device Package: Axial |
Operating Temperature - Junction: - |
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Semtech |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1KV 5A AXIAL |
In Stock109 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1000V |
Current - Average Rectified (Io): 5A |
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 2µs |
Current - Reverse Leakage @ Vr: 1µA @ 1000V |
Capacitance @ Vr, F: 92pF @ 5V, 1MHz |
Mounting Type: Through Hole |
Package / Case: Axial |
Supplier Device Package: Axial |
Operating Temperature - Junction: - |
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Semtech |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 3A AXIAL |
In Stock359 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 5A |
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 2µs |
Current - Reverse Leakage @ Vr: 1µA @ 400V |
Capacitance @ Vr, F: 92pF @ 5V, 1MHz |
Mounting Type: Through Hole |
Package / Case: Axial |
Supplier Device Package: Axial |
Operating Temperature - Junction: - |
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GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Single SIC DIODE 1200V 5A TO-252-2 |
In Stock381 More on Order |
|
Series: - |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 27A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 4µA @ 1200V |
Capacitance @ Vr, F: 359pF @ 1V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: TO-252-2 |
Operating Temperature - Junction: -55°C ~ 175°C |
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Microsemi |
Diodes & Rectifiers - Rectifiers - Single DIODE SCHOTTKY 1.2KV 10A TO220 |
In Stock1,598 More on Order |
|
Series: - |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 10A |
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: - |
Capacitance @ Vr, F: - |
Mounting Type: Through Hole |
Package / Case: TO-220-2 |
Supplier Device Package: TO-220 [K] |
Operating Temperature - Junction: - |
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ON Semiconductor |
Diodes & Rectifiers - Rectifiers - Single DIODE SCHOTTKY 1.2KV TO252 |
In Stock178 More on Order |
|
Series: - |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): - |
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 200µA @ 1200V |
Capacitance @ Vr, F: 612pF @ 1V, 100kHz |
Mounting Type: Surface Mount |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: TO-252, (D-Pak) |
Operating Temperature - Junction: - |
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IXYS |
Diodes & Rectifiers - Rectifiers - Single DIODE AVALANCHE 1600V 3.6A AXIAL |
In Stock1,587 More on Order |
|
Series: - |
Diode Type: Avalanche |
Voltage - DC Reverse (Vr) (Max): 1600V |
Current - Average Rectified (Io): 3.6A |
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 7A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 2mA @ 1600V |
Capacitance @ Vr, F: - |
Mounting Type: Through Hole |
Package / Case: Axial |
Supplier Device Package: Axial |
Operating Temperature - Junction: -40°C ~ 180°C |
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Littelfuse |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.2KV 75A TO247AC |
In Stock536 More on Order |
|
Series: DUR |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 75A |
Voltage - Forward (Vf) (Max) @ If: 3.5V @ 60A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 100ns |
Current - Reverse Leakage @ Vr: 650µA @ 1200V |
Capacitance @ Vr, F: - |
Mounting Type: Through Hole |
Package / Case: TO-247-2 |
Supplier Device Package: TO-247AC |
Operating Temperature - Junction: -55°C ~ 150°C |
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Littelfuse |
Diodes & Rectifiers - Rectifiers - Single DIODE SCHOTTKY 1.2KV 33A TO252 |
In Stock470 More on Order |
|
Series: Gen2 |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 33A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 100µA @ 1200V |
Capacitance @ Vr, F: 582pF @ 1V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: TO-252, (D-Pak) |
Operating Temperature - Junction: -55°C ~ 175°C |
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Littelfuse |
Diodes & Rectifiers - Rectifiers - Single SCHOTTKY DIODE SIC 1200V 10A |
In Stock437 More on Order |
|
Series: Gen2 |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 28A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 100µA @ 1200V |
Capacitance @ Vr, F: 582pF @ 1V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: TO-263-2L |
Operating Temperature - Junction: -55°C ~ 175°C |
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SMC Diode Solutions |
Diodes & Rectifiers - Rectifiers - Single SIC SCHOTTKY RECTIFIER |
In Stock351 More on Order |
|
Series: - |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 650V |
Current - Average Rectified (Io): 12A |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 150µA @ 650V |
Capacitance @ Vr, F: 750pF @ 0V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: D2PAK |
Operating Temperature - Junction: -55°C ~ 175°C |
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Microsemi |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 125V 150MA DO35 |
In Stock694 More on Order |
|
Series: Military, MIL-PRF-19500/241 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 125V |
Current - Average Rectified (Io): 150mA |
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA |
Speed: Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr): 3µs |
Current - Reverse Leakage @ Vr: 1nA @ 125V |
Capacitance @ Vr, F: - |
Mounting Type: Through Hole |
Package / Case: DO-204AH, DO-35, Axial |
Supplier Device Package: DO-35 |
Operating Temperature - Junction: -65°C ~ 175°C |
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ON Semiconductor |
Diodes & Rectifiers - Rectifiers - Single 650V 30A SIC SBD GEN1.5 |
In Stock311 More on Order |
|
Series: Automotive, AEC-Q101 |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 650V |
Current - Average Rectified (Io): 73A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 40µA @ 650V |
Capacitance @ Vr, F: 1280pF @ 1V, 100kHz |
Mounting Type: Surface Mount |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: D2PAK-3 (TO-263) |
Operating Temperature - Junction: -55°C ~ 175°C |
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Rohm Semiconductor |
Diodes & Rectifiers - Rectifiers - Single DIODE SCHOTTKY 650V 12A TO263AB |
In Stock254 More on Order |
|
Series: Automotive, AEC-Q101 |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 650V |
Current - Average Rectified (Io): 12A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 12A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 240µA @ 600V |
Capacitance @ Vr, F: 438pF @ 1V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: TO-263AB |
Operating Temperature - Junction: 175°C (Max) |
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STMicroelectronics |
Diodes & Rectifiers - Rectifiers - Single DIODES AND RECTIFIERS |
In Stock283 More on Order |
|
Series: Automotive, AEC-Q101, ECOPACK®2 |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 650V |
Current - Average Rectified (Io): 20A |
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 150µA @ 600V |
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: D2PAK |
Operating Temperature - Junction: -40°C ~ 175°C |
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Microsemi |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 1A AXIAL |
In Stock1,106 More on Order |
|
Series: Military, MIL-PRF-19500/429 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 500nA @ 400V |
Capacitance @ Vr, F: - |
Mounting Type: Through Hole |
Package / Case: A, Axial |
Supplier Device Package: - |
Operating Temperature - Junction: -65°C ~ 175°C |
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Microsemi |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 1A AXIAL |
In Stock369 More on Order |
|
Series: Military, MIL-PRF-19500/427 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 2µs |
Current - Reverse Leakage @ Vr: 500nA @ 400V |
Capacitance @ Vr, F: - |
Mounting Type: Through Hole |
Package / Case: A, Axial |
Supplier Device Package: - |
Operating Temperature - Junction: -65°C ~ 200°C |
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GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 50V 6A DO4 |
In Stock2,398 More on Order |
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Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io): 6A |
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 200ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Capacitance @ Vr, F: - |
Mounting Type: Chassis, Stud Mount |
Package / Case: DO-203AA, DO-4, Stud |
Supplier Device Package: DO-4 |
Operating Temperature - Junction: -65°C ~ 150°C |
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Rohm Semiconductor |
Diodes & Rectifiers - Rectifiers - Single DIODES SILICON CARBIDE |
In Stock273 More on Order |
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Series: - |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 650V |
Current - Average Rectified (Io): 20A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 20A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 100µA @ 650V |
Capacitance @ Vr, F: 1000pF @ 1V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: LPTL |
Operating Temperature - Junction: 175°C (Max) |
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Rohm Semiconductor |
Diodes & Rectifiers - Rectifiers - Single DIODE SCHOTTKY 650V 20A TO263AB |
In Stock274 More on Order |
|
Series: - |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 650V |
Current - Average Rectified (Io): 20A |
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 20A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 400µA @ 600V |
Capacitance @ Vr, F: 730pF @ 1V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: TO-263AB |
Operating Temperature - Junction: 175°C (Max) |
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Microsemi |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 1A AXIAL |
In Stock340 More on Order |
|
Series: Military, MIL-PRF-19500/359 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 1µA @ 200V |
Capacitance @ Vr, F: - |
Mounting Type: Through Hole |
Package / Case: A, Axial |
Supplier Device Package: - |
Operating Temperature - Junction: -65°C ~ 175°C |
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Rohm Semiconductor |
Diodes & Rectifiers - Rectifiers - Single DIODE SCHOTTKY 650V 15A TO263AB |
In Stock327 More on Order |
|
Series: Automotive, AEC-Q101 |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 650V |
Current - Average Rectified (Io): 15A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 15A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 300µA @ 600V |
Capacitance @ Vr, F: 550pF @ 1V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: TO-263AB |
Operating Temperature - Junction: 175°C (Max) |
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Microsemi |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 1A AXIAL |
In Stock718 More on Order |
|
Series: Military, MIL-PRF-19500/429 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 500nA @ 400V |
Capacitance @ Vr, F: 35pF @ 12V, 1MHz |
Mounting Type: Through Hole |
Package / Case: A, Axial |
Supplier Device Package: - |
Operating Temperature - Junction: -65°C ~ 175°C |
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GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Single SIC DIODE 1200V 8A TO-252-2 |
In Stock401 More on Order |
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Series: - |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 40A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 7µA @ 1200V |
Capacitance @ Vr, F: 545pF @ 1V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: TO-252-2 |
Operating Temperature - Junction: -55°C ~ 175°C |
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Microsemi |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 1A AXIAL |
In Stock2,257 More on Order |
|
Series: Military, MIL-PRF-19500/429 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 500nA @ 200V |
Capacitance @ Vr, F: 45pF @ 12V, 1MHz |
Mounting Type: Through Hole |
Package / Case: A, Axial |
Supplier Device Package: A-PAK |
Operating Temperature - Junction: -65°C ~ 175°C |
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Sanken |
Diodes & Rectifiers - Rectifiers - Single DIODE SCHOTTKY 600V 20A TO220-2 |
In Stock474 More on Order |
|
Series: - |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 20A |
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 15mA @ 600V |
Capacitance @ Vr, F: - |
Mounting Type: Through Hole |
Package / Case: TO-220-2 Full Pack |
Supplier Device Package: TO-220F |
Operating Temperature - Junction: -40°C ~ 175°C |
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GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Single SIC DIODE 1200V 10A TO-252-2 |
In Stock482 More on Order |
|
Series: - |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 50A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 10µA @ 1200V |
Capacitance @ Vr, F: 660pF @ 1V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: TO-252-2 |
Operating Temperature - Junction: -55°C ~ 175°C |