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Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 202/2164

Part Number	Description	In Stock
2SA1313-O(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 500MA TO236-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock7,022 More on Order
2SA1313-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.5A SMINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock15,707 More on Order
2SA1315-Y,HOF(M Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 80V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock166 More on Order
2SA1315-Y,T6ASNF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 80V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock290 More on Order
2SA1362-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single PNP TRANSISTOR VCEO-15V IC-0.8A Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock333 More on Order
2SA1371D-AE ON Semiconductor	Transistors - Bipolar (BJT) - Single DIODE Manufacturer: ON Semiconductor	In Stock398 More on Order
2SA1371E-AE ON Semiconductor	Transistors - Bipolar (BJT) - Single DIODE Manufacturer: ON Semiconductor	In Stock491 More on Order
2SA1381CSTU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 300V 0.1A TO-126 Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V Power - Max: 7W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock201 More on Order
2SA1381DSTU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 300V 0.1A TO-126 Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V Power - Max: 7W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock500 More on Order
2SA1381ESTU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 300V 0.1A TO-126 Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Power - Max: 7W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock465 More on Order
2SA1381FSTU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 300V 0.1A TO-126 Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 10V Power - Max: 7W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock499 More on Order
2SA1382,T6MIBF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 33mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 110MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock146 More on Order
2SA1386 Sanken	Transistors - Bipolar (BJT) - Single TRANS PNP 160V 15A TO3P Manufacturer: Sanken Transistor Type: PNP Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V Power - Max: 130W Frequency - Transition: 40MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock2,025 More on Order
2SA1386A Sanken	Transistors - Bipolar (BJT) - Single TRANS PNP 180V 15A TO-3P Manufacturer: Sanken Transistor Type: PNP Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V Power - Max: 130W Frequency - Transition: 40MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock2,733 More on Order
2SA1416S-TD-E ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 100V 1A SOT89-3 Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock3,651 More on Order
2SA1416T-TD-E ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 100V 1A SOT89-3 Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock2,752 More on Order
2SA1417S-TD-E ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 100V 2A SOT89-3 Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock327 More on Order
2SA1417T-TD-E ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 100V 2A SOT89-3 Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock2,786 More on Order
2SA1418S-TD-E ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 160V 0.7A SOT89-3 Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock258 More on Order
2SA1418T-TD-E ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 0.7A 160V Manufacturer: ON Semiconductor Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock3,682 More on Order
2SA1419S-TD-E ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 160V 1.5A SOT89-3 Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock423 More on Order
2SA1419S-TD-H ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 160V 1.5A PCP Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock474 More on Order
2SA1419T-TD-E ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 160V 1.5A SOT89-3 Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock3,736 More on Order
2SA1419T-TD-H ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 160V 1.5A PCP Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock2,685 More on Order
2SA1425-Y,T2F(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 800MA 120V SC71 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock381 More on Order
2SA1428-O,T2CLAF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 50V SC71 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock476 More on Order
2SA1428-O,T2CLAF(M Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 50V SC71 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock289 More on Order
2SA1428-O,T2WNLF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 50V SC71 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock279 More on Order
2SA1428-Y,T2F(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 50V SC71 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock149 More on Order
2SA1428-Y,T2F(M Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 50V SC71 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock122 More on Order

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