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Transistors

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Part Number
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JAN2N2880
JAN2N2880

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 5A TO59

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/315
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
  • Power - Max: 2W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: TO-210AA, TO-59-4, Stud
  • Supplier Device Package: TO-59
In Stock313

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JAN2N2904
JAN2N2904

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock215

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JAN2N2904A
JAN2N2904A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.6A TO-39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/290
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 800mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
In Stock155

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JAN2N2904AL
JAN2N2904AL

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock123

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JAN2N2905
JAN2N2905

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 40V 0.6A TO39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/290
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1μA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
In Stock154

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JAN2N2905A
JAN2N2905A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.6A TO39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/290
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1μA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock398

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JAN2N2905AL
JAN2N2905AL

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.6A TO5

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/290
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1μA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock342

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JAN2N2906A
JAN2N2906A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.6A TO18

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/291
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock171

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JAN2N2906AL
JAN2N2906AL

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.6A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/291
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
In Stock369

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JAN2N2906AUA
JAN2N2906AUA

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.6A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/291
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: 4-SMD
In Stock256

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JAN2N2906AUB
JAN2N2906AUB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.6A 3UB

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/291
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
In Stock449

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JAN2N2907A
JAN2N2907A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.6A TO18

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/291
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
In Stock206

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JAN2N2907AL
JAN2N2907AL

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.6A 4UA

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/291
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA
In Stock284

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JAN2N2907AUA
JAN2N2907AUA

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.6A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/291
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA
In Stock415

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JAN2N2919
JAN2N2919

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock425

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JAN2N2945A
JAN2N2945A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 20V 0.1A TO-46

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/382
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
  • Power - Max: 400mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46
In Stock195

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JAN2N2946A
JAN2N2946A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 35V 0.1A TO46

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/382
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
  • Power - Max: 400mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46
In Stock401

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JAN2N3019
JAN2N3019

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 1A TO39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/391
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
  • Power - Max: 800mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock396

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JAN2N3019S
JAN2N3019S

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/391
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
  • Power - Max: 800mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock283

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JAN2N3055
JAN2N3055

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 70V 15A TO-3

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/407
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 3.3A, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
  • Power - Max: 6W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
In Stock423

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JAN2N3057A
JAN2N3057A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 1A TO46

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/391
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46-3
In Stock392

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JAN2N3250A
JAN2N3250A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.2A TO-39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/323
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
In Stock364

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JAN2N3251A
JAN2N3251A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.2A TO-39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/323
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
In Stock231

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JAN2N3251AUB
JAN2N3251AUB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.2A TO-39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/323
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
In Stock419

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JAN2N335
JAN2N335

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 45V 10MA

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock106

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JAN2N3418
JAN2N3418

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 3A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/393
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 5µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 2V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock205

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JAN2N3418S
JAN2N3418S

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 3A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/393
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 5µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 2V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock485

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JAN2N3419
JAN2N3419

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 3A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/393
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 5µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 2V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock401

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JAN2N3419S
JAN2N3419S

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 3A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/393
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 5µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 2V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock475

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JAN2N3420
JAN2N3420

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 3A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/393
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 5µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock270

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