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Transistors

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Part Number
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JAN2N3634
JAN2N3634

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 140V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/357
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock343

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JAN2N3634L
JAN2N3634L

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 140V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/357
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock404

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JAN2N3634UB
JAN2N3634UB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 140V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/357
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-SMD
In Stock451

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JAN2N3635
JAN2N3635

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 140V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/357
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock493

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JAN2N3635L
JAN2N3635L

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 140V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/357
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock434

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JAN2N3635UB
JAN2N3635UB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 140V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/357
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1.5W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-SMD
In Stock407

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JAN2N3636
JAN2N3636

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 175V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/357
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 175V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock150

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JAN2N3636L
JAN2N3636L

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 175V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/357
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 175V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock172

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JAN2N3636UB
JAN2N3636UB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 175V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/357
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 175V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
  • Power - Max: 1.5W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-SMD
In Stock181

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JAN2N3637
JAN2N3637

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 175V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/357
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 175V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock109

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JAN2N3637L
JAN2N3637L

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 175V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/357
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 175V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock288

More on Order

JAN2N3637UB
JAN2N3637UB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 175V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/357
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 175V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1.5W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-SMD
In Stock104

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JAN2N3700
JAN2N3700

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/391
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock313

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JAN2N3700UB
JAN2N3700UB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/391
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-UB (2.9x2.2)
In Stock446

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JAN2N3715
JAN2N3715

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 10A TO-3

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/408
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
  • Power - Max: 5W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
In Stock207

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JAN2N3716
JAN2N3716

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 10A TO-3

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/408
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
  • Power - Max: 5W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
In Stock139

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JAN2N3735
JAN2N3735

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 40V 1.5A TO39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/395
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock460

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JAN2N3735L
JAN2N3735L

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 40V 1.5A TO5

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/395
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock337

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JAN2N3737
JAN2N3737

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 40V 1.5A TO46

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/395
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46-3
In Stock394

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JAN2N3737UB
JAN2N3737UB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 40V 1.5A 3 PIN

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/395
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-UB (2.9x2.2)
In Stock492

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JAN2N3740
JAN2N3740

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 4A TO-66

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/441
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
  • Power - Max: 25W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)
In Stock485

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JAN2N3741
JAN2N3741

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 80V 4A TO-66

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/441
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
  • Power - Max: 25W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)
In Stock352

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JAN2N3749
JAN2N3749

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 5A TO111

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/315
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
  • Power - Max: 2W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-111-4, Stud
  • Supplier Device Package: TO-111
In Stock196

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JAN2N3762
JAN2N3762

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 40V 1.5A TO-39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/396
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 1.5V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
In Stock322

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JAN2N3764
JAN2N3764

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 40V 1.5A TO-39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/396
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 1.5V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46 (TO-206AB)
In Stock340

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JAN2N3767
JAN2N3767

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 4A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/518
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
  • Power - Max: 25W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)
In Stock228

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JAN2N3772
JAN2N3772

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 20A TO-3

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/518
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 20A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 4A, 20A
  • Current - Collector Cutoff (Max): 5mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 4V
  • Power - Max: 6W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
In Stock497

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JAN2N3791
JAN2N3791

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 10A TO-3

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/379
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
  • Current - Collector Cutoff (Max): 5mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
  • Power - Max: 5W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
In Stock473

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JAN2N3792
JAN2N3792

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 80V 10A TO-3

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/379
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
  • Current - Collector Cutoff (Max): 5mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
  • Power - Max: 5W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
In Stock325

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JAN2N3867
JAN2N3867

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 40V 3A TO5

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/350
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
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