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Bipolar (BJT) - Arrays (1,432)
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Part Number	Description	In Stock
JAN2N5582 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO46 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/423 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46-3	In Stock298 More on Order
JAN2N5662 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 200V 2A TO-5 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/454 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock306 More on Order
JAN2N5663 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 300V 2A TO-5 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/454 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock299 More on Order
JAN2N5664 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 200V 5A TO66 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/455 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 1V @ 5A, 1A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V Power - Max: 2.5W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	In Stock238 More on Order
JAN2N5665 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 300V 5A TO-66 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/455 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V Power - Max: 2.5W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	In Stock404 More on Order
JAN2N5666 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 200V 5A TO5 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/455 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 1V @ 5A, 1A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V Power - Max: 1.2W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock132 More on Order
JAN2N5666S Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 200V 5A TO39 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/455 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 1V @ 5A, 1A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V Power - Max: 1.2W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock319 More on Order
JAN2N5667 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 300V 5A TO-5 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/455 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V Power - Max: 1.2W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock422 More on Order
JAN2N5667S Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 300V 5A TO39 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/455 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V Power - Max: 1.2W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock445 More on Order
JAN2N5671 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 90V 30A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/488 Transistor Type: NPN Current - Collector (Ic) (Max): 30A Voltage - Collector Emitter Breakdown (Max): 90V Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A Current - Collector Cutoff (Max): 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15A, 2V Power - Max: 6W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3 (TO-204AA)	In Stock485 More on Order
JAN2N5680 Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock484 More on Order
JAN2N5681 Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock118 More on Order
JAN2N5682 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 120V 1A TO-39 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/583 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock210 More on Order
JAN2N5683 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 50A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/466 Transistor Type: NPN Current - Collector (Ic) (Max): 50A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A Current - Collector Cutoff (Max): 5µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V Power - Max: 300W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3 (TO-204AA)	In Stock155 More on Order
JAN2N5684 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 50A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/466 Transistor Type: NPN Current - Collector (Ic) (Max): 50A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A Current - Collector Cutoff (Max): 5µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5A, 2V Power - Max: 300W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3 (TO-204AA)	In Stock231 More on Order
JAN2N5685 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 50A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/464 Transistor Type: NPN Current - Collector (Ic) (Max): 50A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V Power - Max: 300W Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3 (TO-204AA)	In Stock240 More on Order
JAN2N6051 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 80V 12A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/501 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Power - Max: 150W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3 (TO-204AA)	In Stock499 More on Order
JAN2N6052 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 100V 12A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/501 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Power - Max: 150W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3 (TO-204AA)	In Stock500 More on Order
JAN2N6058 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 80V 12A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/502 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Power - Max: 150W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3 (TO-204AA)	In Stock239 More on Order
JAN2N6059 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 12A TO3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/502 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Power - Max: 150W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3)	In Stock372 More on Order
JAN2N6193 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 100V 5A TO39 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/561 Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock486 More on Order
JAN2N6211 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 225V 2A TO-66 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/461 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 225V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V Power - Max: 3W Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	In Stock453 More on Order
JAN2N6249 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 200V 10A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/510 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V Power - Max: 6W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3 (TO-204AA)	In Stock274 More on Order
JAN2N6249T1 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 200V 10A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/510 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V Power - Max: 6W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Supplier Device Package: TO-254AA	In Stock497 More on Order
JAN2N6250 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 275V 10A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/510 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 275V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V Power - Max: 6W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3 (TO-204AA)	In Stock193 More on Order
JAN2N6250T1 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 275V 10A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/510 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 275V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V Power - Max: 6W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Supplier Device Package: TO-254AA	In Stock332 More on Order
JAN2N6251 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 350V 10A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/510 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.67A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 10A, 3V Power - Max: 5.5W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3 (TO-204AA)	In Stock481 More on Order
JAN2N6251T1 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 350V 10A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/510 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.67A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 10A, 3V Power - Max: 6W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Supplier Device Package: TO-254AA	In Stock345 More on Order
JAN2N6277 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 150V 50A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/514 Transistor Type: NPN Current - Collector (Ic) (Max): 50A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 3V @ 10A, 50A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20A, 4V Power - Max: 250W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3 (TO-204AA)	In Stock270 More on Order
JAN2N6283 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 80V 20A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/504 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 20A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V Power - Max: 175W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3 (TO-204AA)	In Stock123 More on Order

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