Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

Transistors

Records 64,903
Page 427/2164
Image
Part Number
Description
In Stock
Quantity
JAN2N7372
JAN2N7372

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 80V 5A TO254

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/612
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
  • Power - Max: 4W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254AA
In Stock295

More on Order

JAN2N7373
JAN2N7373

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 5A TO254

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/613
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
  • Power - Max: 4W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254AA
In Stock200

More on Order

JAN2N918
JAN2N918

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 15V 0.05A TO72

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/301
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Power - Max: 200mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
In Stock256

More on Order

JAN2N918UB
JAN2N918UB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 15V 0.05A TO72

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/301
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Power - Max: 200mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Non-Standard
In Stock233

More on Order

JAN2N930
JAN2N930

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 45V 0.03A TO18

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/253
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 2nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock353

More on Order

JANS2N2221AUBC
JANS2N2221AUBC

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/255
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-SMD
In Stock424

More on Order

JANS2N2222A
JANS2N2222A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.8A TO-18

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/255
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
In Stock3,242

More on Order

JANS2N2222AUBC
JANS2N2222AUBC

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-SMD
In Stock369

More on Order

JANS2N2369AUB
JANS2N2369AUB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 15V SMD

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/317
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
In Stock174

More on Order

JANS2N2369AUBC
JANS2N2369AUBC

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/317
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-SMD
In Stock128

More on Order

JANS2N2905A
JANS2N2905A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.6A TO-39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/290
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1μA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock442

More on Order

JANS2N2907A
JANS2N2907A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.6A TO18

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/291
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
In Stock524

More on Order

JANS2N3019
JANS2N3019

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 1A TO-5

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/391
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
  • Power - Max: 800mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock1,484

More on Order

JANS2N3439
JANS2N3439

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 350V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/368
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max): 2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Power - Max: 800mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
In Stock326

More on Order

JANS2N3439U4
JANS2N3439U4

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 350V 1A UA

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock183

More on Order

JANS2N3439UA
JANS2N3439UA

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 350V 1A UA

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/368
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max): 2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Power - Max: 800mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA
In Stock296

More on Order

JANS2N3440
JANS2N3440

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 250V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/368
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max): 2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Power - Max: 800mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
In Stock485

More on Order

JANS2N3440U4
JANS2N3440U4

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 250V 1A TO-5

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock377

More on Order

JANS2N3440UA
JANS2N3440UA

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 250V 1A TO-5

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/368
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max): 2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Power - Max: 800mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA
In Stock176

More on Order

JANS2N3499L
JANS2N3499L

Microsemi

Transistors - Bipolar (BJT) - Single

SMALL-SIGNAL BJT

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/366
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock473

More on Order

JANS2N3499L/TR
JANS2N3499L/TR

Microsemi

Transistors - Bipolar (BJT) - Single

SMALL-SIGNAL BJT

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/366
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock104

More on Order

JANS2N3500
JANS2N3500

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 150V 0.3A TO-39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/366
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
In Stock305

More on Order

JANS2N3501
JANS2N3501

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 150V 0.3A TO-39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/366
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock113

More on Order

JANS2N3634UB
JANS2N3634UB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 140V 1A TO-3

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/357
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-SMD
In Stock450

More on Order

JANS2N3637
JANS2N3637

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 175V 1A TO-39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/357
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 175V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock766

More on Order

JANS2N3637UB
JANS2N3637UB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 175V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/357
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 175V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1.5W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
In Stock330

More on Order

JANS2N3700
JANS2N3700

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 1A TO-18

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/391
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
In Stock671

More on Order

JANS2N3763
JANS2N3763

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 1.5A TO-39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/396
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
In Stock291

More on Order

JANS2N3810L/TR
JANS2N3810L/TR

Microsemi

Transistors - Bipolar (BJT) - Single

BJTS

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/336
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78
In Stock134

More on Order

JANS2N3867
JANS2N3867

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 40V 3A TO-5

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/350
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
  • Power - Max: 1W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock282

More on Order