Bipolar (BJT) - Arrays, Pre-Biased

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CategorySemiconductors / Transistors / Bipolar (BJT) - Arrays, Pre-Biased

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
ACX143ZUQ-7R	Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363 T&R 3K	In Stock474 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 270mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
ADC114EUQ-13	Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363 T&R 10	In Stock448 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 270mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
ADC143TUQ-13	Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363 T&R 10	In Stock215 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 270mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
ADC143ZUQ-13	Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363 T&R 10	In Stock325 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 270mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
RN1901,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6	In Stock473 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 1kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
RN2905FE,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ES6	In Stock294 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN2902FE,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W ES6	In Stock173 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN4904FE,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.1W ES6	In Stock114 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz, 200MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
BCR141SH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock298 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 130MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
RN4906,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6	In Stock295 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
RN4907,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6	In Stock301 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
RN1906,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6	In Stock224 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
RN2903,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6	In Stock434 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
RN2904,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6	In Stock382 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
RN4901,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6	In Stock132 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 4.7kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz, 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
ACX114YUQ-13R	Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363	In Stock339 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms, 10kOhms	Resistor - Emitter Base (R2): 47kOhms, 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: 250MHz	Power - Max: 270mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
ACX124EUQ-13R	Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363	In Stock234 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms, 22kOhms	Resistor - Emitter Base (R2): 22kOhms, 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: 250MHz	Power - Max: 270mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
ADC114YUQ-13	Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363	In Stock479 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms, 47kOhms	Resistor - Emitter Base (R2): 10kOhms, 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: 250MHz	Power - Max: 270mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
ADC124EUQ-13	Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363	In Stock270 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms, 22kOhms	Resistor - Emitter Base (R2): 22kOhms, 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: 250MHz	Power - Max: 270mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
BCR10PNH6730XTMA1	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363	In Stock144 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 130MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
BCR198SH6827XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363	In Stock458 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 190MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
ADA114EUQ-13	Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363	In Stock406 More on Order	Series: Automotive, AEC-Q101	Transistor Type: 2 PNP Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms, 10kOhms	Resistor - Emitter Base (R2): 10kOhms, 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: 250MHz	Power - Max: 270mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
BCR08PNH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363	In Stock244 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 170MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
BCR08PNH6433XTMA1	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363	In Stock205 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 170MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
BCR08PNH6727XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363	In Stock357 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 170MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
BCR108SH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock328 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 170MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
BCR10PNH6727XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363	In Stock476 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 130MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
BCR116SH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock128 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 150MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
BCR119SH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock334 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 150MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
BCR119SH6433XTMA1	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock222 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 150MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6

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