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CategorySemiconductors / Transistors / Bipolar (BJT) - Arrays, Pre-Biased
Records 1,584
Page 4/53
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W 6TSSOP |
In Stock3,630 More on Order |
|
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 100nA |
Frequency - Transition: 180MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT6 |
In Stock10,504 More on Order |
|
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: EMT6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 |
In Stock117,650 More on Order |
|
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 100µA (ICBO) |
Frequency - Transition: 250MHz, 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363 |
In Stock24,004 More on Order |
|
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 130MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363 |
In Stock4,600 More on Order |
|
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 150MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS UMT6 |
In Stock4,320 More on Order |
|
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms, 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms, 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW, 120mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: UMT6 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SOT666 |
In Stock44,841 More on Order |
|
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SOT666 |
In Stock50,498 More on Order |
|
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 4.7kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT666 |
In Stock160 More on Order |
|
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT666 |
In Stock5,765 More on Order |
|
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SOT666 |
In Stock393 More on Order |
|
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SOT666 |
In Stock5,766 More on Order |
|
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W SOT363 |
In Stock38,676 More on Order |
|
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W SOT363 |
In Stock23,123 More on Order |
|
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W SOT363 |
In Stock7,006 More on Order |
|
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W SOT363 |
In Stock3,738 More on Order |
|
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.3W SC74R |
In Stock4,886 More on Order |
|
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SC-74, SOT-457 |
Supplier Device Package: SC-74R |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363 |
In Stock3,815 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP UMT6 |
In Stock48,595 More on Order |
|
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: UMT6 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.15W UMT5 |
In Stock3,790 More on Order |
|
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 30mA, 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms, 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms, 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package: UMT5 |
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|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W UMT6 |
In Stock35,621 More on Order |
|
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: UMT6 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.15W UMT6 |
In Stock8,547 More on Order |
|
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: UMT6 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 6TSSOP |
In Stock4,757 More on Order |
|
Series: - |
Transistor Type: 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max): 100mA, 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V, 40V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 100mA. 2V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: 300MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.6W 6TSOP |
In Stock4,985 More on Order |
|
Series: - |
Transistor Type: 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max): 100mA, 1A |
Voltage - Collector Emitter Breakdown (Max): 50V, 20V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 2.2kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 220 @ 500mA, 2V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 1µA, 100nA |
Frequency - Transition: 185MHz |
Power - Max: 600mW |
Mounting Type: Surface Mount |
Package / Case: SC-74, SOT-457 |
Supplier Device Package: 6-TSOP |
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|
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.6W 6TSOP |
In Stock4,081 More on Order |
|
Series: - |
Transistor Type: 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max): 100mA, 700mA |
Voltage - Collector Emitter Breakdown (Max): 50V, 60V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 500mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 1µA, 100nA |
Frequency - Transition: 185MHz |
Power - Max: 600mW |
Mounting Type: Surface Mount |
Package / Case: SC-74, SOT-457 |
Supplier Device Package: 6-TSOP |
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|
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.6W 6TSOP |
In Stock3,779 More on Order |
|
Series: - |
Transistor Type: 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max): 100mA, 700mA |
Voltage - Collector Emitter Breakdown (Max): 50V, 60V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 4.7kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 150 @ 500mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 1µA, 100nA |
Frequency - Transition: 185MHz |
Power - Max: 600mW |
Mounting Type: Surface Mount |
Package / Case: SC-74, SOT-457 |
Supplier Device Package: 6-TSOP |
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.6W 6TSOP |
In Stock4,927 More on Order |
|
Series: - |
Transistor Type: 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max): 100mA, 700mA |
Voltage - Collector Emitter Breakdown (Max): 50V, 40V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 300 @ 100mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 310mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 1µA, 100nA |
Frequency - Transition: 150MHz |
Power - Max: 600mW |
Mounting Type: Surface Mount |
Package / Case: SC-74, SOT-457 |
Supplier Device Package: 6-TSOP |
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.6W 6TSOP |
In Stock3,880 More on Order |
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Series: - |
Transistor Type: 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max): 100mA, 1A |
Voltage - Collector Emitter Breakdown (Max): 50V, 20V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 220 @ 500mA, 2V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 1µA, 100nA |
Frequency - Transition: 185MHz |
Power - Max: 600mW |
Mounting Type: Surface Mount |
Package / Case: SC-74, SOT-457 |
Supplier Device Package: 6-TSOP |
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.6W 6TSOP |
In Stock3,736 More on Order |
|
Series: - |
Transistor Type: 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max): 100mA, 1A |
Voltage - Collector Emitter Breakdown (Max): 50V, 20V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 4.7kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 220 @ 500mA, 2V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 1µA, 100nA |
Frequency - Transition: 185MHz |
Power - Max: 600mW |
Mounting Type: Surface Mount |
Package / Case: SC-74, SOT-457 |
Supplier Device Package: 6-TSOP |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SMT6 |
In Stock3,976 More on Order |
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Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SC-74, SOT-457 |
Supplier Device Package: SMT6 |