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Bipolar (BJT) - Arrays, Pre-Biased

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CategorySemiconductors / Transistors / Bipolar (BJT) - Arrays, Pre-Biased
Records 1,584
Page 44/53
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Part Number
Manufacturer
Description
In Stock
Quantity
Series
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1)
Resistor - Emitter Base (R2)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
UP0331200L
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI5

In Stock328

More on Order

Series: -
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz, 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-665
Supplier Device Package: SSMini5-F2
UP0411M00L
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS DUAL PNP SSMINI6

In Stock297

More on Order

Series: -
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMINI6-F1
MUN5211DW1T1
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.25W SOT363

In Stock419

More on Order

Series: -
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5311DW1T1
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

In Stock193

More on Order

Series: -
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
UP0411300L
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS DUAL PNP SSMINI6

In Stock100

More on Order

Series: -
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMINI6-F1
UP0431200L
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI6

In Stock309

More on Order

Series: -
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz, 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMINI6-F1
UP0431500L
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI6

In Stock466

More on Order

Series: -
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz, 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMINI6-F1
UP0439000L
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI6

In Stock215

More on Order

Series: -
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47kOhms, 10kOhms
Resistor - Emitter Base (R2): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz, 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMINI6-F1
NP0G1AE00A
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS DUAL PNP SSSMINI6

In Stock368

More on Order

Series: -
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SSSMini6-F1
NP0G3A300A
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSSMINI6

In Stock449

More on Order

Series: -
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz, 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SSSMini6-F1
NP0G3D100A
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSSMINI6

In Stock124

More on Order

Series: -
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7kOhms, 47kOhms
Resistor - Emitter Base (R2): 4.7kOhms, 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V / 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz, 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SSSMini6-F1
NP0H3A300A
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSSMINI6

In Stock275

More on Order

Series: -
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz, 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SSSMini6-F1
NUS2401SNT1
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN/1PNP PREBIAS SC74

In Stock174

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Series: -
Transistor Type: 2 NPN, 1 PNP - Pre-Biased
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 175Ohms, 10kOhms
Resistor - Emitter Base (R2): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA / 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 350mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SC-74
EMF22T2R
Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS NPN PREBIAS/NPN 0.15W EMT6

In Stock260

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Series: -
Transistor Type: 1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 320MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
MUN5236DW1T1
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.25W SOT363

In Stock219

More on Order

Series: -
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5237DW1T1
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.25W SOT363

In Stock249

More on Order

Series: -
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5137DW1T1
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.25W SOT363

In Stock176

More on Order

Series: -
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5136DW1T1
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.25W SOT363

In Stock395

More on Order

Series: -
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
UMC2NT1
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS NPN/PNP PREBIAS 0.15W SC70

In Stock342

More on Order

Series: -
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
UMA6NT1
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.15W SC70

In Stock488

More on Order

Series: -
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
UMA4NT1
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.15W SC70

In Stock371

More on Order

Series: -
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
NSBC143ZDXV6T1
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.5W SOT563

In Stock124

More on Order

Series: -
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
NSBC144EPDXV6T5
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT563

In Stock286

More on Order

Series: -
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
NSBC143ZPDXV6T5
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT563

In Stock123

More on Order

Series: -
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
NSBC143TDXV6T1
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.5W SOT563

In Stock212

More on Order

Series: -
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
NSBC143EPDXV6T1
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT563

In Stock311

More on Order

Series: -
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
NSBC143EDXV6T1
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.5W SOT563

In Stock195

More on Order

Series: -
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
NSBC124XDXV6T1
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.5W SOT563

In Stock475

More on Order

Series: -
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
NSTB60BDW1T1
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS NPN PREBIAS/PNP SOT363

In Stock326

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Series: -
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 140MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
NSBC123JDXV6T5
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.5W SOT563

In Stock334

More on Order

Series: -
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563