Bipolar (BJT) - Arrays, Pre-Biased

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CategorySemiconductors / Transistors / Bipolar (BJT) - Arrays, Pre-Biased

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
BCR 148S H6827	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock319 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 100MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
BCR 22PN H6727	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363	In Stock131 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 130MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
BCR 48PN H6727	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363	In Stock279 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 70mA, 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms, 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 100MHz, 200MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
PBLS2001S,115	NXP	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 1.5W 8SO	In Stock363 More on Order	Series: -	Transistor Type: 1 NPN Pre-Biased, 1 PNP	Current - Collector (Ic) (Max): 100mA, 3A	Voltage - Collector Emitter Breakdown (Max): 50V, 20V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 2.2kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 150 @ 2A, 2V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A	Current - Collector Cutoff (Max): 1µA, 100nA	Frequency - Transition: 100MHz	Power - Max: 1.5W	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
PBLS2002S,115	NXP	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 1.5W 8SO	In Stock464 More on Order	Series: -	Transistor Type: 1 NPN Pre-Biased, 1 PNP	Current - Collector (Ic) (Max): 100mA, 3A	Voltage - Collector Emitter Breakdown (Max): 50V, 20V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 4.7kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A	Current - Collector Cutoff (Max): 1µA, 100nA	Frequency - Transition: 100MHz	Power - Max: 1.5W	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
PBLS4002V,115	NXP	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP SOT666	In Stock223 More on Order	Series: -	Transistor Type: 1 NPN Pre-Biased, 1 PNP	Current - Collector (Ic) (Max): 100mA, 500mA	Voltage - Collector Emitter Breakdown (Max): 50V, 40V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 4.7kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 100mA, 2V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: 300MHz	Power - Max: 300mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-666
PBLS4004V,115	NXP	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP SOT666	In Stock192 More on Order	Series: -	Transistor Type: 1 NPN Pre-Biased, 1 PNP	Current - Collector (Ic) (Max): 100mA, 500mA	Voltage - Collector Emitter Breakdown (Max): 50V, 40V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 150 @ 100mA, 2V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: 300MHz	Power - Max: 300mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-666
NSVB123JPDXV6T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT563	In Stock120 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 4.7kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
NSVB143TPDXV6T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT563	In Stock279 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 357mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
FMG9AT248	Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SMT5	In Stock182 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 300mW	Mounting Type: Surface Mount	Package / Case: SC-74A, SOT-753	Supplier Device Package: SMT5
RN2702TE85LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W USV	In Stock287 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: 5-TSSOP, SC-70-5, SOT-353	Supplier Device Package: USV
RN1906(T5L,F,T)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6	In Stock191 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
RN1961FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ES6	In Stock472 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 4.7kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN4981,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6	In Stock297 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 4.7kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100µA (ICBO)	Frequency - Transition: 250MHz, 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
RN4988(T5L,F,T)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6	In Stock203 More on Order	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100µA (ICBO)	Frequency - Transition: 250MHz, 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
RN1906FE(T5L,F,T)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ES6	In Stock395 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN1967FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ES6	In Stock334 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN1968FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ES6	In Stock297 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN1969FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ES6	In Stock119 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN1970FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ES6	In Stock217 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN1971FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ES6	In Stock124 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN1673(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6	In Stock439 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: -	Power - Max: 300mW	Mounting Type: Surface Mount	Package / Case: SC-74, SOT-457	Supplier Device Package: SM6
RN1911(T5L,F,T)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W US6	In Stock135 More on Order	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
RN2902FE(T5L,F,T)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ES6	In Stock217 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN2904FE(T5L,F,T)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ES6	In Stock383 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN2961FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ES6	In Stock327 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 4.7kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN2962FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ES6	In Stock258 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 1kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN2963FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ES6	In Stock333 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN2964FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ES6	In Stock205 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
RN2965FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ES6	In Stock350 More on Order	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6

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