Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Voltage - Collector Emitter Breakdown (Max) | Frequency - Transition | Noise Figure (dB Typ @ f) | Gain | Power - Max | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector (Ic) (Max) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92S |
In Stock246 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz |
Gain: 18dB ~ 22dB |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Short Body |
Supplier Device Package: TO-92S |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 700MHZ TO92-3 |
In Stock269 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 30V |
Frequency - Transition: 700MHz |
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz |
Gain: 20dB ~ 24dB |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 10V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 |
In Stock167 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz |
Gain: - |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.1GHZ TO92-3 |
In Stock469 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 1.1GHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 700MHZ TO92-3 |
In Stock119 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 30V |
Frequency - Transition: 700MHz |
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz |
Gain: 20dB ~ 24dB |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 10V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 700MHZ TO92-3 |
In Stock313 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 30V |
Frequency - Transition: 700MHz |
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz |
Gain: 20dB ~ 24dB |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 10V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 |
In Stock246 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz |
Gain: - |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.1GHZ TO92-3 |
In Stock494 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 1.1GHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 700MHZ TO92-3 |
In Stock441 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 30V |
Frequency - Transition: 700MHz |
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz |
Gain: 20dB ~ 24dB |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 10V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 700MHZ TO92-3 |
In Stock278 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 30V |
Frequency - Transition: 700MHz |
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz |
Gain: 20dB ~ 24dB |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 10V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.1GHZ TO92-3 |
In Stock207 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 1.1GHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 |
In Stock386 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz |
Gain: - |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 700MHZ TO92-3 |
In Stock420 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 30V |
Frequency - Transition: 700MHz |
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz |
Gain: 20dB ~ 24dB |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 10V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 |
In Stock454 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz |
Gain: - |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 |
In Stock213 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz |
Gain: - |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 |
In Stock338 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz |
Gain: - |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 |
In Stock289 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz |
Gain: - |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.1GHZ TO92-3 |
In Stock386 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 1.1GHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 |
In Stock222 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz |
Gain: - |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 |
In Stock472 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz |
Gain: - |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 600MHZ SOT23-3 |
In Stock281 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V |
Current - Collector (Ic) (Max): 10mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 500MHZ SOT23-3 |
In Stock478 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 40V |
Frequency - Transition: 500MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 20mA, 2V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.5GHZ TO92-3 |
In Stock436 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 1.5GHz |
Noise Figure (dB Typ @ f): - |
Gain: 14dB ~ 26dB |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 600MHZ TO92-3 |
In Stock284 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): 6dB @ 60MHz |
Gain: 15dB |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 650MHZ TO92-3 |
In Stock174 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 25V |
Frequency - Transition: 650MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 2GHZ TO92-3 |
In Stock153 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 2GHz |
Noise Figure (dB Typ @ f): 5dB @ 200MHz |
Gain: 15dB |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS PNP 20V 600MHZ TO92-3 |
In Stock403 More on Order |
|
Series: - |
Transistor Type: PNP |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 650MHZ TO92-3 |
In Stock256 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 25V |
Frequency - Transition: 650MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
Renesas Electronics America Inc. |
Transistors - Bipolar (BJT) - RF RF TRANS 5NPN 15V 1.15GHZ 16SOIC |
In Stock330 More on Order |
|
Series: - |
Transistor Type: 5 NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 1.15GHz |
Noise Figure (dB Typ @ f): 3.5dB @ 100MHz |
Gain: 27dB ~ 30dB |
Power - Max: 85mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 6V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
Renesas Electronics America Inc. |
Transistors - Bipolar (BJT) - RF RF TRANS 5 NPN 12V 8GHZ 14SOIC |
In Stock205 More on Order |
|
Series: - |
Transistor Type: 5 NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 8GHz |
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz |
Gain: - |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V |
Current - Collector (Ic) (Max): 65mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 14-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 14-SOIC |