Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / Bipolar (BJT) - RF
Records 1,506
Page 29/51
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Voltage - Collector Emitter Breakdown (Max) | Frequency - Transition | Noise Figure (dB Typ @ f) | Gain | Power - Max | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector (Ic) (Max) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 650MHZ TO92-3 |
In Stock195 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 25V |
Frequency - Transition: 650MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 650MHZ TO92-3 |
In Stock494 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 25V |
Frequency - Transition: 650MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 650MHZ TO92-3 |
In Stock358 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 25V |
Frequency - Transition: 650MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 650MHZ TO92-3 |
In Stock246 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 25V |
Frequency - Transition: 650MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 650MHZ TO92-3 |
In Stock169 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 25V |
Frequency - Transition: 650MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 800MHZ TO92-3 |
In Stock374 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 800MHz |
Noise Figure (dB Typ @ f): 6dB @ 200MHz |
Gain: 24dB |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V |
Current - Collector (Ic) (Max): - |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 800MHZ TO92-3 |
In Stock279 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 800MHz |
Noise Figure (dB Typ @ f): 6dB @ 200MHz |
Gain: 24dB |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V |
Current - Collector (Ic) (Max): - |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 800MHZ TO92-3 |
In Stock249 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 800MHz |
Noise Figure (dB Typ @ f): 6dB @ 200MHz |
Gain: 24dB |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V |
Current - Collector (Ic) (Max): - |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS PNP 20V 600MHZ TO92-3 |
In Stock125 More on Order |
|
Series: - |
Transistor Type: PNP |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS PNP 20V 600MHZ TO92-3 |
In Stock176 More on Order |
|
Series: - |
Transistor Type: PNP |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS PNP 20V 600MHZ TO92-3 |
In Stock288 More on Order |
|
Series: - |
Transistor Type: PNP |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.5GHZ TO92-3 |
In Stock275 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 1.5GHz |
Noise Figure (dB Typ @ f): - |
Gain: 14dB ~ 26dB |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.5GHZ TO92-3 |
In Stock113 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 1.5GHz |
Noise Figure (dB Typ @ f): - |
Gain: 14dB ~ 26dB |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.5GHZ TO92-3 |
In Stock383 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 1.5GHz |
Noise Figure (dB Typ @ f): - |
Gain: 14dB ~ 26dB |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 2GHZ TO92-3 |
In Stock252 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 2GHz |
Noise Figure (dB Typ @ f): 5dB @ 200MHz |
Gain: 15dB |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 2GHZ TO92-3 |
In Stock283 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 2GHz |
Noise Figure (dB Typ @ f): 5dB @ 200MHz |
Gain: 15dB |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 2GHZ TO92-3 |
In Stock301 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 2GHz |
Noise Figure (dB Typ @ f): 5dB @ 200MHz |
Gain: 15dB |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 600MHZ TO92-3 |
In Stock467 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): 6dB @ 60MHz |
Gain: 15dB |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
Broadcom |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ 86 PLASTIC |
In Stock430 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 8GHz |
Noise Figure (dB Typ @ f): 1.9dB ~ 3.5dB @ 2GHz ~ 4GHz |
Gain: 9dB ~ 13dB |
Power - Max: 500mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V |
Current - Collector (Ic) (Max): 80mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-86 |
Supplier Device Package: 86 Plastic |
|
|
|
Renesas Electronics America Inc. |
Transistors - Bipolar (BJT) - RF RF TRANS 5 PNP 15V 5.5GHZ 16QFN |
In Stock221 More on Order |
|
Series: - |
Transistor Type: 5 PNP |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 5.5GHz |
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz |
Gain: - |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V |
Current - Collector (Ic) (Max): 65mA |
Operating Temperature: 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-VFQFN Exposed Pad |
Supplier Device Package: 16-QFN (3x3) |
|
|
|
Renesas Electronics America Inc. |
Transistors - Bipolar (BJT) - RF RF TRANS 5NPN 15V 1.15GHZ 16SOIC |
In Stock496 More on Order |
|
Series: - |
Transistor Type: 5 NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 1.15GHz |
Noise Figure (dB Typ @ f): 3.5dB @ 100MHz |
Gain: 27dB ~ 30dB |
Power - Max: 85mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 6V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
|
Renesas Electronics America Inc. |
Transistors - Bipolar (BJT) - RF RF TRANS 5 PNP 15V 5.5GHZ 16SOIC |
In Stock335 More on Order |
|
Series: - |
Transistor Type: 5 PNP |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 5.5GHz |
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz |
Gain: - |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V |
Current - Collector (Ic) (Max): 65mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
|
Renesas Electronics America Inc. |
Transistors - Bipolar (BJT) - RF RF TRANS 5 PNP 15V 5.5GHZ 16SOIC |
In Stock134 More on Order |
|
Series: - |
Transistor Type: 5 PNP |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 5.5GHz |
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz |
Gain: - |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V |
Current - Collector (Ic) (Max): 65mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
|
Renesas Electronics America Inc. |
Transistors - Bipolar (BJT) - RF RF TRANS 5 PNP 15V 5.5GHZ 16QFN |
In Stock311 More on Order |
|
Series: - |
Transistor Type: 5 PNP |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 5.5GHz |
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz |
Gain: - |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V |
Current - Collector (Ic) (Max): 65mA |
Operating Temperature: 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-VFQFN Exposed Pad |
Supplier Device Package: 16-QFN (3x3) |
|
|
|
Broadcom |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ DIE |
In Stock184 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 8GHz |
Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz |
Gain: 8dB ~ 17dB |
Power - Max: 500mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V |
Current - Collector (Ic) (Max): 60mA |
Operating Temperature: 200°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V 42GHZ 4TSFP |
In Stock138 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 4.5V |
Frequency - Transition: 42GHz |
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz |
Gain: 11dB ~ 21.5dB |
Power - Max: 500mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V |
Current - Collector (Ic) (Max): 150mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 4-SMD, Flat Leads |
Supplier Device Package: 4-TSFP |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 30GHZ SOT343-4 |
In Stock138 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 5V |
Frequency - Transition: 30GHz |
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz |
Gain: 21.5dB |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V |
Current - Collector (Ic) (Max): 80mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-82A, SOT-343 |
Supplier Device Package: PG-SOT343-4 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 30GHZ SOT343-4 |
In Stock269 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 5V |
Frequency - Transition: 30GHz |
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz |
Gain: 21.5dB |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V |
Current - Collector (Ic) (Max): 80mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-82A, SOT-343 |
Supplier Device Package: PG-SOT343-4 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V 37GHZ SOT343-4 |
In Stock387 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 4.5V |
Frequency - Transition: 37GHz |
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz |
Gain: 10.5dB ~ 21.5dB |
Power - Max: 500mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V |
Current - Collector (Ic) (Max): 150mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-82A, SOT-343 |
Supplier Device Package: PG-SOT343-4 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ 4TSFP |
In Stock360 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 5V |
Frequency - Transition: 25GHz |
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz |
Gain: 22.5dB |
Power - Max: 55mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V |
Current - Collector (Ic) (Max): 12mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 4-SMD, Flat Leads |
Supplier Device Package: 4-TSFP |