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CategorySemiconductors / Transistors / Bipolar (BJT) - RF
Records 1,506
Page 37/51
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Voltage - Collector Emitter Breakdown (Max) | Frequency - Transition | Noise Figure (dB Typ @ f) | Gain | Power - Max | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector (Ic) (Max) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 512MHZ TO39 |
In Stock159 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 16V |
Frequency - Transition: 450MHz ~ 512MHz |
Noise Figure (dB Typ @ f): - |
Gain: 8dB |
Power - Max: 5W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V |
Current - Collector (Ic) (Max): 400mA |
Operating Temperature: 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 400MHZ TO39 |
In Stock447 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 30V |
Frequency - Transition: 400MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 1W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V |
Current - Collector (Ic) (Max): 400mA |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 500MHZ TO39 |
In Stock320 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 40V |
Frequency - Transition: 500MHz |
Noise Figure (dB Typ @ f): - |
Gain: 10dB @ 175MHz |
Power - Max: 1W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V |
Current - Collector (Ic) (Max): 400mA |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 400MHZ TO72 |
In Stock349 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 10V |
Frequency - Transition: 400MHz |
Noise Figure (dB Typ @ f): - |
Gain: 12dB @ 400MHz |
Power - Max: 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 6V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: TO-206AF, TO-72-4 Metal Can |
Supplier Device Package: TO-72 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 1.2GHZ TO39 |
In Stock220 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 1.2GHz |
Noise Figure (dB Typ @ f): - |
Gain: 12dB |
Power - Max: 2.5W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V |
Current - Collector (Ic) (Max): 400mA |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 200MHZ TO72 |
In Stock403 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 200MHz |
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz |
Gain: 20dB |
Power - Max: 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: TO-206AF, TO-72-4 Metal Can |
Supplier Device Package: TO-72 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF TRANSISTOR BIPO 55AW-1 |
In Stock471 More on Order |
|
Series: - |
Transistor Type: - |
Voltage - Collector Emitter Breakdown (Max): - |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.15GHZ 55KT |
In Stock163 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 55V |
Frequency - Transition: 1.025GHz ~ 1.15GHz |
Noise Figure (dB Typ @ f): - |
Gain: 6dB ~ 6.5dB |
Power - Max: 1700W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V |
Current - Collector (Ic) (Max): 40A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: 55KT |
Supplier Device Package: 55KT |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ 55ST-1 |
In Stock406 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: 1.025GHz ~ 1.15GHz |
Noise Figure (dB Typ @ f): - |
Gain: 9dB ~ 10dB |
Power - Max: 2500W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V |
Current - Collector (Ic) (Max): 50A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: 55ST-1 |
Supplier Device Package: 55ST-1 |
|
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|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.03GHZ 55SW |
In Stock479 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: 1.03GHz |
Noise Figure (dB Typ @ f): - |
Gain: 10dB ~ 10.5dB |
Power - Max: 3400W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V |
Current - Collector (Ic) (Max): 80A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: 55SW |
Supplier Device Package: 55SW |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ 55AW-1 |
In Stock471 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 55V |
Frequency - Transition: 960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f): - |
Gain: 7.5dB |
Power - Max: 97W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V |
Current - Collector (Ic) (Max): 5A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: 55AW-1 |
Supplier Device Package: 55AW-1 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ 55AW |
In Stock299 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 55V |
Frequency - Transition: 960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f): - |
Gain: 7dB ~ 8.2dB |
Power - Max: 220W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V |
Current - Collector (Ic) (Max): 8A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: 55AW |
Supplier Device Package: 55AW |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.03GHZ 55TU-1 |
In Stock479 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: 1.03GHz |
Noise Figure (dB Typ @ f): - |
Gain: 8.9dB |
Power - Max: 8750W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V |
Current - Collector (Ic) (Max): 100A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 55TU-1 |
Supplier Device Package: 55TU-1 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 60V 1.09GHZ 55AW |
In Stock117 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 60V |
Frequency - Transition: 1.03GHz ~ 1.09GHz |
Noise Figure (dB Typ @ f): - |
Gain: 10dB |
Power - Max: 350W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V |
Current - Collector (Ic) (Max): 4A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: 55AW |
Supplier Device Package: 55AW |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 3.5V 1.15GHZ M115 |
In Stock324 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 3.5V |
Frequency - Transition: 1.025GHz ~ 1.15GHz |
Noise Figure (dB Typ @ f): - |
Gain: 9dB |
Power - Max: 10W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V |
Current - Collector (Ic) (Max): 250mA |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: M115 |
Supplier Device Package: M115 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 45V 1.15GHZ M105 |
In Stock399 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 45V |
Frequency - Transition: 1.025GHz ~ 1.15GHz |
Noise Figure (dB Typ @ f): - |
Gain: 9.5dB |
Power - Max: 21.9W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V |
Current - Collector (Ic) (Max): 1A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: M105 |
Supplier Device Package: M105 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.09GHZ M216 |
In Stock176 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: 1.09GHz |
Noise Figure (dB Typ @ f): - |
Gain: 8dB |
Power - Max: 880W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V |
Current - Collector (Ic) (Max): 24A |
Operating Temperature: 250°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: M216 |
Supplier Device Package: M216 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 225MHZ M218 |
In Stock268 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: 225MHz |
Noise Figure (dB Typ @ f): - |
Gain: 8.4dB |
Power - Max: 220W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V |
Current - Collector (Ic) (Max): 7A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: M218 |
Supplier Device Package: M218 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.215GHZ M216 |
In Stock418 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: 960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f): - |
Gain: 7dB |
Power - Max: 940W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V |
Current - Collector (Ic) (Max): 24A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: M216 |
Supplier Device Package: M216 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 48V 1.215GHZ M222 |
In Stock424 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 48V |
Frequency - Transition: 960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f): - |
Gain: 9.3dB |
Power - Max: 25W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V |
Current - Collector (Ic) (Max): 900mA |
Operating Temperature: 250°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: M222 |
Supplier Device Package: M222 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ M222 |
In Stock374 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 55V |
Frequency - Transition: 960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f): - |
Gain: 8.1dB ~ 8.9dB |
Power - Max: 50W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V |
Current - Collector (Ic) (Max): 1.8A |
Operating Temperature: 250°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: M222 |
Supplier Device Package: M222 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ M214 |
In Stock294 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 55V |
Frequency - Transition: 960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f): - |
Gain: 7.8dB |
Power - Max: 75W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V |
Current - Collector (Ic) (Max): 3.5A |
Operating Temperature: 250°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: M214 |
Supplier Device Package: M214 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ M218 |
In Stock312 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 55V |
Frequency - Transition: 960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f): - |
Gain: 7.5dB |
Power - Max: 300W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V |
Current - Collector (Ic) (Max): 8A |
Operating Temperature: 250°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: M218 |
Supplier Device Package: M218 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ M216 |
In Stock441 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 55V |
Frequency - Transition: 960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f): - |
Gain: 7.5dB |
Power - Max: 300W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V |
Current - Collector (Ic) (Max): 16.5A |
Operating Temperature: 250°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: M216 |
Supplier Device Package: M216 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 60V 1.215GHZ M214 |
In Stock113 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 60V |
Frequency - Transition: 960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f): - |
Gain: 8dB ~ 8.7dB |
Power - Max: 575W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V |
Current - Collector (Ic) (Max): 20A |
Operating Temperature: 250°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: M214 |
Supplier Device Package: M214 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.215GHZ M216 |
In Stock150 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: 960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f): - |
Gain: 7.6dB |
Power - Max: 940W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V |
Current - Collector (Ic) (Max): 24A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: M216 |
Supplier Device Package: M216 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M105 |
In Stock185 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: 1.025GHz ~ 1.15GHz |
Noise Figure (dB Typ @ f): - |
Gain: 10dB |
Power - Max: 87.5W |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): 1.5A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: M105 |
Supplier Device Package: M105 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M115 |
In Stock166 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: 1.025GHz ~ 1.15GHz |
Noise Figure (dB Typ @ f): - |
Gain: 10dB |
Power - Max: 87.5W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V |
Current - Collector (Ic) (Max): 1.5A |
Operating Temperature: - |
Mounting Type: Chassis Mount |
Package / Case: M115 |
Supplier Device Package: M115 |
|
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|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 50V 2GHZ 55BT |
In Stock449 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 50V |
Frequency - Transition: 2GHz |
Noise Figure (dB Typ @ f): - |
Gain: 9.5dB |
Power - Max: 5W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V |
Current - Collector (Ic) (Max): 250mA |
Operating Temperature: - |
Mounting Type: Chassis Mount |
Package / Case: 55BT |
Supplier Device Package: 55BT |
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Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 50V 2GHZ 55BT-1 |
In Stock377 More on Order |
|
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 50V |
Frequency - Transition: 2GHz |
Noise Figure (dB Typ @ f): - |
Gain: 8.5dB |
Power - Max: 12W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V |
Current - Collector (Ic) (Max): 500mA |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: 55BT-1 |
Supplier Device Package: 55BT-1 |