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Bipolar (BJT) - RF

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CategorySemiconductors / Transistors / Bipolar (BJT) - RF
Records 1,506
Page 50/51
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Transistor Type
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TPR1000A
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS 65V 1.09GHZ 55KV
In Stock293

More on Order
Series: -
Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 6dB
Power - Max: 2900W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 80A
Operating Temperature: 200°C
Mounting Type: Chassis Mount
Package / Case: 55KV
Supplier Device Package: 55KV
UMIL3B
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS 30V 400MHZ 55FT
In Stock256

More on Order
Series: -
Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 225MHz ~ 400MHz
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 11W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100A, 5V
Current - Collector (Ic) (Max): 700mA
Operating Temperature: 150°C
Mounting Type: Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT
2SC5415AE-TD-E
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 6.7GHZ PCP
In Stock483

More on Order
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 9dB
Power - Max: 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP
2SC5551AE-TD-E
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 30V 3.5GHZ PCP
In Stock272

More on Order
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 3.5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1.3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP
MCH4021-TL-E
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 8V 16GHZ 4MCPH
In Stock460

More on Order
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 16GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 17.5dB
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-MCPH
MCH4021-TL-H
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 8V 16GHZ 4MCPH
In Stock240

More on Order
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 16GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 17.5dB
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-MCPH
JANS2N2857UB-LC
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V UB
In Stock356

More on Order
Series: Military, MIL-PRF-19500/343
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 21dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB
CMPTH81 BK
Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ SOT23
In Stock367

More on Order
Series: -
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
CP681-MPSH81-CM
Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ DIE
In Stock391

More on Order
Series: -
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
CP681-MPSH81-CT
Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ DIE
In Stock249

More on Order
Series: -
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
CP681-MPSH81-CT20
Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ DIE
In Stock471

More on Order
Series: -
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
MPSH81 TRE
Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ SOT23
In Stock155

More on Order
Series: -
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: SOT-23
CEN1107 APM
Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

TRANSISTOR NPN
In Stock418

More on Order
Series: -
Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
CMPTH10 TR
Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS NPNUHF/VHF SOT23
In Stock490

More on Order
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
CEN1107
Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

TRANSISTOR NPN
In Stock453

More on Order
Series: -
Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
CMPTH10 BK
Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS NPNUHF/VHF SOT23
In Stock118

More on Order
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
CP302-MPSH10-WN
Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS NPNUHF/VHF
In Stock354

More on Order
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
MPSH10
Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS NPNUHF/VHF
In Stock220

More on Order
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: -
Supplier Device Package: -
CP302-MPSH10-CT
Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS NPNUHF/VHF
In Stock105

More on Order
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
CP302-MPSH10-CT20
Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS NPNUHF/VHF
In Stock184

More on Order
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
BFS 17P E8211
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN SOT23-3
In Stock189

More on Order
Series: *
Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
BFS17PE6752HTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN SOT23-3
In Stock133

More on Order
Series: *
Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
BFS17WH6393XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN SOT323-3
In Stock195

More on Order
Series: *
Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
DSA9G01C0L
Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

TRANSISTOR RF PNP SSMINI3
In Stock123

More on Order
Series: -
Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
BF240,112
NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 40V 150MHZ TO92-3
In Stock314

More on Order
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
BFG590,215
NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5GHZ SOT143B
In Stock331

More on Order
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B
BLT70,115
NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 8V 900MHZ SOT223
In Stock455

More on Order
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 900MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 2.1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 4.8V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
BLS2731-10,114
NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 75V 3.1GHZ CDFM2
In Stock160

More on Order
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 3.1GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 145W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-445C
Supplier Device Package: CDFM2
BLS3135-10,114
NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 75V 3.5GHZ CDFM2
In Stock467

More on Order
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 3.5GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 34W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-445C
Supplier Device Package: CDFM2
BLS3135-20,114
NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 75V 3.5GHZ CDFM2
In Stock300

More on Order
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 3.5GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 80W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Current - Collector (Ic) (Max): 2A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-422A
Supplier Device Package: CDFM2