Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

Bipolar (BJT) - RF

Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / Bipolar (BJT) - RF
Records 1,506
Page 9/51
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Transistor Type
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP840FESDH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 2.6V 85GHZ 4TSFP

In Stock250

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.6V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Gain: 35dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: 4-TSFP
MRF454
M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 211-11

In Stock279

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 80W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 211-11, Style 2
Supplier Device Package: 211-11, Style 2
BFR360L3E6765XTMA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSLP-3-1

In Stock312

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Gain: 11.5dB ~ 16dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3-1
2SC5488A-TL-H
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 7GHZ 3SSFP

In Stock189

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 12dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-SSFP
2SC5226A-5-TL-E
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 7GHZ 3MCP

In Stock262

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 12dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-MCP
BFP520FH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 3.5V 45GHZ 4TSFP

In Stock207

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Gain: 22.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP
BFU530WX
NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT323-3

In Stock444

More on Order

Series: Automotive, AEC-Q101
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
Gain: 18.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
2SC5065-O(TE85L,F)
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7GHZ USM

In Stock391

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM
2SC5084-O(TE85L,F)
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7GHZ SMINI

In Stock448

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
MT3S111TU,LF
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - RF

RF SIGE NPN BIPOLAR TRANSISTOR N

In Stock263

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Gain: 12.5dB
Power - Max: 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: UFM
MT4S300U(TE85L,O,F
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - RF

X34 PB-F RADIO-FREQUENCY SIGE HE

In Stock107

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4V
Frequency - Transition: 26.5GHz
Noise Figure (dB Typ @ f): 0.55dB @ 2GHz
Gain: 16.9dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: USQ
SS9018FBU
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.1GHZ TO92-3

In Stock200

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 54 @ 1mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
BFS 17P E6433
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.4GHZ SOT23-3

In Stock486

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
BFR380FH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSFP-3

In Stock132

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
Gain: 9.5dB ~ 13.5dB
Power - Max: 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3
BFR380L3E6327XTMA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSLP-3-1

In Stock395

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 2.1dB @ 1.8GHz
Gain: 7.5dB ~ 16.5dB
Power - Max: 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3-1
BFR360FH6765XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSFP-3

In Stock203

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 15.5dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3
BFP182WH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SOT343-4

In Stock347

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain: 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4
2SC5086-Y,LF
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7GHZ SSM

In Stock253

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
DMC506E20R
Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 20V 650MHZ SOT363

In Stock434

More on Order

Series: -
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
Gain: 24dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
BF771E6327HTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SOT23-3

In Stock318

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 10dB ~ 15dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
2SC4098T106P
Rohm Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 300MHZ UMT3

In Stock114

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 300MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 1mA, 6V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3
2SC5108-Y,LF
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - RF

TRANS RF NPN 10V 1GHZ SSM

In Stock178

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): -
Gain: 11dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
SMMBTH10-4LT3G
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 800MHZ SOT23-3

In Stock117

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
2SC4713KT146R
Rohm Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 6V 800MHZ SMT3

In Stock338

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3
BFR340L3E6327XTMA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSLP-3-1

In Stock390

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
Gain: 17.5dB
Power - Max: 60mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Current - Collector (Ic) (Max): 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3-1
55GN01FA-TL-H
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 5.5GHZ 3SSFP

In Stock113

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 4.5GHz ~ 5.5GHz
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Gain: 11dB ~ 19dB @ 1GHz ~ 400MHz
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-81
Supplier Device Package: 3-SSFP
2SC4618TLN
Rohm Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 300MHZ EMT3

In Stock141

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 300MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 1mA, 6V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3
BFR35APE6327HTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5GHZ SOT23-3

In Stock243

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 16dB
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 45mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
15GN03FA-TL-H
ON Semiconductor

Transistors - Bipolar (BJT) - RF

TRANS NPN VHF-UHF 70A 10V SSFP

In Stock369

More on Order

Series: -
Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-SSFP
BFP182RE7764HTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SOT143R-4

In Stock396

More on Order

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain: 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: PG-SOT143R-4