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CategorySemiconductors / Transistors / Bipolar (BJT) - Single, Pre-Biased
Records 3,282
Page 41/110
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW VMT3 |
In Stock194 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: VMT3 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW EMT3 |
In Stock300 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SC-75, SOT-416 |
Supplier Device Package: EMT3 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW SMINI3 |
In Stock345 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 20V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 1µA (ICBO) |
Frequency - Transition: - |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SC-85 |
Supplier Device Package: SMini3-F2-B |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SMT3 |
In Stock431 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3 |
|
|
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Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 100MW SSSMINI3 |
In Stock492 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SSSMini3-F2-B |
|
|
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Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 100MW SSSMINI3 |
In Stock441 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 510 Ohms |
Resistor - Emitter Base (R2): 5.1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SSSMini3-F2-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 100MW SSSMINI3 |
In Stock143 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 510 Ohms |
Resistor - Emitter Base (R2): 5.1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SSSMini3-F2-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 100MW SSSMINI3 |
In Stock203 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SSSMini3-F2-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 100MW SSSMINI3 |
In Stock311 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SSSMini3-F2-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 100MW SSSMINI3 |
In Stock399 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SSSMini3-F2-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW SMINI3 |
In Stock269 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 330µA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SC-85 |
Supplier Device Package: SMini3-F2-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3 |
In Stock280 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 100 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: Mini3-G3-B |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SMT3 |
In Stock490 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 100MW SSSMINI3 |
In Stock402 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SSSMini3-F2-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 100MW SSSMINI3 |
In Stock131 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SSSMini3-F2-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 125MW SSMINI3 |
In Stock300 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 125mW |
Mounting Type: Surface Mount |
Package / Case: SC-89, SOT-490 |
Supplier Device Package: SSMini3-F3-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3 |
In Stock486 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: Mini3-G3-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3 |
In Stock486 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 270 Ohms |
Resistor - Emitter Base (R2): 5 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: Mini3-G3-B |
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|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 2W MPT3 |
In Stock1,524 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 60V |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 80MHz |
Power - Max: 2W |
Mounting Type: Surface Mount |
Package / Case: TO-243AA |
Supplier Device Package: MPT3 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW EMT3 |
In Stock249 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SC-75, SOT-416 |
Supplier Device Package: EMT3 |
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|
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Infineon Technologies |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.33W SOT23-3 |
In Stock371 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
Frequency - Transition: 100MHz |
Power - Max: 330mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
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|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SC75 |
In Stock15,778 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-75, SOT-416 |
Supplier Device Package: SC-75, SOT-416 |
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 246MW SOT23-3 |
In Stock9,203 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 246MW SOT23-3 |
In Stock9,719 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 246MW SOT23-3 |
In Stock14,575 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
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|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 230MW SC59 |
In Stock9,193 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 230mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SC-59 |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased PNP DIGITAL TRANSISTOR (CORRESPO |
In Stock13,984 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): - |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: VMT3 |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased PNP -100MA -50V DIGITAL TRANSIST |
In Stock4,515 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 350mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SST3 |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased NPN DIGITAL TRANSISTOR (WITH BUI |
In Stock4,514 More on Order |
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Series: Automotive, AEC-Q101 |
Transistor Type: NPN - Pre-Biased + Diode |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): - |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-85 |
Supplier Device Package: UMT3F |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased NPN DIGITAL TRANSISTOR (CORRESPO |
In Stock12,590 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: NPN - Pre-Biased + Diode |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): - |
Resistor - Base (R1): 22 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: VMT3 |