Bipolar (BJT) - Single, Pre-Biased

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single, Pre-Biased

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
RN1317(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W USM	In Stock408 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: USM
RN2310(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W USM	In Stock152 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: USM
RN2318(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W USM	In Stock286 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 200MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: USM
DTA124TMT2L	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW VMT3	In Stock286 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VMT3
DTA144TMT2L	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW VMT3	In Stock417 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VMT3
DTA115EMT2L	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW VMT3	In Stock149 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 20mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 100 kOhms	Resistor - Emitter Base (R2): 100 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VMT3
DTA143XMT2L	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW VMT3	In Stock199 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VMT3
DTA143TMT2L	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW VMT3	In Stock327 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VMT3
DTA115TMT2L	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW VMT3	In Stock323 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 100 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VMT3
SMUN2111T3G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 230MW SC59	In Stock252 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 230mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SC-59
SMUN2211T3G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 230MW SC59	In Stock471 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 230mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SC-59
ADTA114ECAQ-7	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased PREBIAS TRANSISTOR SOT23 T&R 3K	In Stock493 More on Order	Series: Automotive, AEC-Q101	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 310mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23
ADTC114ECAQ-7	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased PREBIAS TRANSISTOR SOT23 T&R 3K	In Stock255 More on Order	Series: Automotive, AEC-Q101	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 310mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23
ADTC144WCAQ-7	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased PREBIAS TRANSISTOR SOT23 T&R 3K	In Stock111 More on Order	Series: Automotive, AEC-Q101	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 310mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23
PDTB113EQAZ	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 3DFN	In Stock393 More on Order	Series: Automotive, AEC-Q101	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 1 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz	Power - Max: 325mW	Mounting Type: Surface Mount	Package / Case: 3-XDFN Exposed Pad	Supplier Device Package: DFN1010D-3
PDTB113ZQAZ	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 3DFN	In Stock198 More on Order	Series: Automotive, AEC-Q101	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz	Power - Max: 325mW	Mounting Type: Surface Mount	Package / Case: 3-XDFN Exposed Pad	Supplier Device Package: DFN1010D-3
PDTB114EQAZ	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 3DFN	In Stock482 More on Order	Series: Automotive, AEC-Q101	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz	Power - Max: 325mW	Mounting Type: Surface Mount	Package / Case: 3-XDFN Exposed Pad	Supplier Device Package: DFN1010D-3
PDTB123EQAZ	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 3DFN	In Stock147 More on Order	Series: Automotive, AEC-Q101	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 2.2 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz	Power - Max: 325mW	Mounting Type: Surface Mount	Package / Case: 3-XDFN Exposed Pad	Supplier Device Package: DFN1010D-3
PDTB123YQAZ	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 3DFN	In Stock481 More on Order	Series: Automotive, AEC-Q101	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz	Power - Max: 325mW	Mounting Type: Surface Mount	Package / Case: 3-XDFN Exposed Pad	Supplier Device Package: DFN1010D-3
PDTB143EQAZ	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 3DFN	In Stock210 More on Order	Series: Automotive, AEC-Q101	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz	Power - Max: 325mW	Mounting Type: Surface Mount	Package / Case: 3-XDFN Exposed Pad	Supplier Device Package: DFN1010D-3
PDTB143XQAZ	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 3DFN	In Stock280 More on Order	Series: Automotive, AEC-Q101	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz	Power - Max: 325mW	Mounting Type: Surface Mount	Package / Case: 3-XDFN Exposed Pad	Supplier Device Package: DFN1010D-3
PDTD113EQAZ	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 3DFN	In Stock389 More on Order	Series: Automotive, AEC-Q101	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 1 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 210MHz	Power - Max: 325mW	Mounting Type: Surface Mount	Package / Case: 3-XDFN Exposed Pad	Supplier Device Package: DFN1010D-3
PDTD113ZQAZ	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 3DFN	In Stock361 More on Order	Series: Automotive, AEC-Q101	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 210MHz	Power - Max: 325mW	Mounting Type: Surface Mount	Package / Case: 3-XDFN Exposed Pad	Supplier Device Package: DFN1010D-3
PDTD114EQAZ	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 3DFN	In Stock191 More on Order	Series: Automotive, AEC-Q101	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 210MHz	Power - Max: 325mW	Mounting Type: Surface Mount	Package / Case: 3-XDFN Exposed Pad	Supplier Device Package: DFN1010D-3
PDTD123EQAZ	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 3DFN	In Stock401 More on Order	Series: Automotive, AEC-Q101	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 2.2 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 210MHz	Power - Max: 325mW	Mounting Type: Surface Mount	Package / Case: 3-XDFN Exposed Pad	Supplier Device Package: DFN1010D-3
PDTD123YQAZ	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 3DFN	In Stock435 More on Order	Series: Automotive, AEC-Q101	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 210MHz	Power - Max: 325mW	Mounting Type: Surface Mount	Package / Case: 3-XDFN Exposed Pad	Supplier Device Package: DFN1010D-3
PDTD143EQAZ	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 3DFN	In Stock305 More on Order	Series: Automotive, AEC-Q101	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 210MHz	Power - Max: 325mW	Mounting Type: Surface Mount	Package / Case: 3-XDFN Exposed Pad	Supplier Device Package: DFN1010D-3
PDTD143XQAZ	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 3DFN	In Stock216 More on Order	Series: Automotive, AEC-Q101	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 210MHz	Power - Max: 325mW	Mounting Type: Surface Mount	Package / Case: 3-XDFN Exposed Pad	Supplier Device Package: DFN1010D-3
FJY3002R	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT523F	In Stock133 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-89, SOT-490	Supplier Device Package: SOT-523F
NSVDTA114EM3T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PNP 50V BIPOLAR SOT-723	In Stock445 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 260mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: SOT-723

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