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CategorySemiconductors / Transistors / Bipolar (BJT) - Single, Pre-Biased
Records 3,282
Page 81/110
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 |
In Stock303 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 470 Ohms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 |
In Stock449 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 220 Ohms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 |
In Stock295 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 470 Ohms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 100MW SSSMINI3 |
In Stock475 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 80mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 80MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SSSMini3-F1 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 100MW SSSMINI3 |
In Stock104 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 80mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 80MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SSSMini3-F1 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 100MW SSSMINI3 |
In Stock461 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 80mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 80MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SSSMini3-F1 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 100MW SSSMINI3 |
In Stock138 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 80mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 150MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SSSMini3-F1 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 100MW SSSMINI3 |
In Stock328 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 80mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 150MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SSSMini3-F1 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 100MW SSSMINI3 |
In Stock144 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 80mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 150MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SSSMini3-F1 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 100MW SSSMINI3 |
In Stock187 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 80mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 150MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SSSMini3-F1 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 100MW SSSMINI3 |
In Stock481 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 80mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 100 kOhms |
Resistor - Emitter Base (R2): 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 150MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SSSMini3-F1 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SC75 |
In Stock108 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-75, SOT-416 |
Supplier Device Package: SC-75, SOT-416 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 246MW SOT23-3 |
In Stock320 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 246MW SOT23-3 |
In Stock270 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 246MW SOT23-3 |
In Stock386 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 246MW SOT23-3 |
In Stock231 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 246MW SOT23-3 |
In Stock443 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 246MW SOT23-3 |
In Stock199 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 246MW SOT23-3 |
In Stock403 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 246MW SOT23-3 |
In Stock314 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 246MW SOT23-3 |
In Stock436 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 230MW SC59 |
In Stock237 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 230mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SC-59 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 338MW SC59 |
In Stock155 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 338mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SC-59 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 338MW SC59 |
In Stock371 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 338mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SC-59 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 202MW SC70-3 |
In Stock427 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 202mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SC-70-3 (SOT323) |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 202MW SC70-3 |
In Stock359 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 202mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SC-70-3 (SOT323) |
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|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW SPT |
In Stock247 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 300mW |
Mounting Type: Through Hole |
Package / Case: SC-72 Formed Leads |
Supplier Device Package: SPT |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW SPT |
In Stock308 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 300mW |
Mounting Type: Through Hole |
Package / Case: SC-72 Formed Leads |
Supplier Device Package: SPT |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW SPT |
In Stock165 More on Order |
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Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 300mW |
Mounting Type: Through Hole |
Package / Case: SC-72 Formed Leads |
Supplier Device Package: SPT |
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|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW SPT |
In Stock276 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 30mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 300mW |
Mounting Type: Through Hole |
Package / Case: SC-72 Formed Leads |
Supplier Device Package: SPT |