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CategorySemiconductors / Transistors / Bipolar (BJT) - Single
Records 13,715
Page 152/458
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 30V, 0.1A, 110A |
In Stock280 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V |
Power - Max: 500mW |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 30V, 0.1A, 200A |
In Stock337 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V |
Power - Max: 500mW |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 30V, 0.1A, 420A |
In Stock188 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V |
Power - Max: 500mW |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 45V, 0.1A, 110A |
In Stock304 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V |
Power - Max: 500mW |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 45V, 0.1A, 200A |
In Stock127 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V |
Power - Max: 500mW |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 45V, 0.1A, 420A |
In Stock102 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V |
Power - Max: 500mW |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 45V, 0.8A, 100A |
In Stock301 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 45V, 0.8A, 160A |
In Stock107 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 45V, 0.8A, 250A |
In Stock338 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 25V, 0.8A, 100A |
In Stock175 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 25V |
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 25V, 0.8A, 160A |
In Stock491 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 25V |
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 25V, 0.8A, 250A |
In Stock427 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 25V |
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.5A SOT323 |
In Stock427 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V |
Power - Max: 200mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SC-70 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.5A SOT323 |
In Stock239 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V |
Power - Max: 200mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SC-70 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.5A SOT323 |
In Stock103 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V |
Power - Max: 200mW |
Frequency - Transition: 100MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SC-70 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single TRANS PNP 40V 0.2A 3DFN |
In Stock242 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V |
Power - Max: 250mW |
Frequency - Transition: 250MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 3-XFDFN |
Supplier Device Package: DFN1006B-3 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single NXP3875Y/SOT23/TO-236AB |
In Stock470 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 150mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V |
Power - Max: - |
Frequency - Transition: 80MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: TO-236AB |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 65V 0.1A TO-92 |
In Stock424 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 65V |
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V |
Power - Max: 500mW |
Frequency - Transition: 150MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 45V, 0.5A, 250A |
In Stock146 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V |
Power - Max: 300mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 65V, 0.1A, 110A |
In Stock234 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 65V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V |
Power - Max: 200mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 45V, 0.1A, 110A |
In Stock194 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V |
Power - Max: 200mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 30V, 0.1A, 110A |
In Stock448 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V |
Power - Max: 200mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 30V, 0.1A, 200A |
In Stock450 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V |
Power - Max: 200mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 30V, 0.1A, 420A |
In Stock130 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V |
Power - Max: 200mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, PNP, -65V, -0.1A, 12 |
In Stock493 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 65V |
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V |
Power - Max: 200mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, PNP, -45V, -0.1A, 12 |
In Stock270 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V |
Power - Max: 200mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, PNP, -45V, -0.1A, 42 |
In Stock261 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V |
Power - Max: 200mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, PNP, -30V, -0.1A, 12 |
In Stock439 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V |
Power - Max: 200mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, PNP, -30V, -0.1A, 22 |
In Stock194 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V |
Power - Max: 200mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - Bipolar (BJT) - Single TRANSISTOR, PNP, -30V, -0.1A, 42 |
In Stock141 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V |
Power - Max: 200mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |