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Bipolar (BJT) - Single

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single
Records 13,715
Page 336/458
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2N5401G
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 150V 0.6A TO-92

In Stock398

More on Order

Series: -
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
2N5401RL1
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 150V 0.6A TO-92

In Stock206

More on Order

Series: -
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N5401RL1G
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 150V 0.6A TO-92

In Stock383

More on Order

Series: -
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N5401RLRM
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 150V 0.6A TO-92

In Stock386

More on Order

Series: -
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N5401RLRMG
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 150V 0.6A TO-92

In Stock266

More on Order

Series: -
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N5401ZL1
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 150V 0.6A TO-92

In Stock311

More on Order

Series: -
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N5401ZL1G
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 150V 0.6A TO-92

In Stock194

More on Order

Series: -
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N5550RLRA
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO-92

In Stock210

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N5550RLRAG
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO-92

In Stock482

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N5550RLRP
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO-92

In Stock372

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N5550RLRPG
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO-92

In Stock210

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N5551G
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 160V 0.6A TO-92

In Stock417

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
2N5551RL1
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 160V 0.6A TO-92

In Stock272

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N5551RLRM
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 160V 0.6A TO-92

In Stock307

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N5551RLRMG
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 160V 0.6A TO-92

In Stock455

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N5551RLRP
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 160V 0.6A TO-92

In Stock424

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N5551RLRPG
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 160V 0.6A TO-92

In Stock281

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N5551ZL1
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 160V 0.6A TO-92

In Stock399

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N5551ZL1G
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 160V 0.6A TO-92

In Stock306

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N6288
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 30V 7A TO220AB

In Stock181

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V
Power - Max: 40W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
2N6338
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 100V 25A TO-3

In Stock489

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 25A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V
Power - Max: 200W
Frequency - Transition: 40MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204 (TO-3)
2N6341
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 150V 25A TO-3

In Stock467

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 25A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V
Power - Max: 200W
Frequency - Transition: 40MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204 (TO-3)
2N6387
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 60V 10A TO220AB

In Stock471

More on Order

Series: -
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
2N6426RLRA
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 0.5A TO-92

In Stock392

More on Order

Series: -
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 1μA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N6426RLRAG
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 0.5A TO-92

In Stock180

More on Order

Series: -
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 1μA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N6427RLRA
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 0.5A TO-92

In Stock248

More on Order

Series: -
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 1μA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N6427RLRAG
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 0.5A TO-92

In Stock343

More on Order

Series: -
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 1μA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
2N6487
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 15A TO-220AB

In Stock455

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Power - Max: 1.8W
Frequency - Transition: 5MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
2N6490
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 15A TO-220AB

In Stock469

More on Order

Series: -
Transistor Type: PNP
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Power - Max: 1.8W
Frequency - Transition: 5MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
2N6515
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 250V 0.5A TO-92

In Stock332

More on Order

Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 50mA, 10V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3