Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 80V 0.5A TO-92 |
In Stock316 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 200MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 0.5A TO-92 |
In Stock120 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 100V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 200MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 300V 0.5A TO-92 |
In Stock113 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 300V 0.5A TO-92 |
In Stock340 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 300V 0.5A TO-92 |
In Stock294 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 300V 0.5A TO-92 |
In Stock448 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 200V 0.5A TO-92 |
In Stock454 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 200V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 200V 0.5A TO-92 |
In Stock431 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 200V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 200V 0.5A TO-92 |
In Stock197 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 200V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 400V 0.3A TO-92 |
In Stock481 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 300mA |
Voltage - Collector Emitter Breakdown (Max): 400V |
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V |
Power - Max: 625mW |
Frequency - Transition: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 400V 0.3A TO-92 |
In Stock195 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 300mA |
Voltage - Collector Emitter Breakdown (Max): 400V |
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V |
Power - Max: 625mW |
Frequency - Transition: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 400V 0.3A TO-92 |
In Stock350 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 300mA |
Voltage - Collector Emitter Breakdown (Max): 400V |
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V |
Power - Max: 625mW |
Frequency - Transition: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.5A TO-92 |
In Stock400 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 80V 0.5A TO-92 |
In Stock201 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 80V 0.5A TO-92 |
In Stock342 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 80V 0.5A TO-92 |
In Stock428 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 0.5A TO-92 |
In Stock416 More on Order |
|
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 0.5A TO-92 |
In Stock181 More on Order |
|
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 0.5A TO-92 |
In Stock471 More on Order |
|
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 0.5A TO-92 |
In Stock180 More on Order |
|
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 0.5A TO-92 |
In Stock273 More on Order |
|
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 0.5A TO-92 |
In Stock331 More on Order |
|
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 0.5A TO-92 |
In Stock362 More on Order |
|
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 0.5A TO-92 |
In Stock116 More on Order |
|
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 0.5A TO-92 |
In Stock403 More on Order |
|
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 40V 0.1A TO-92 |
In Stock498 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 40V 0.1A TO-92 |
In Stock366 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 40V 0.5A TO-92 |
In Stock423 More on Order |
|
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 40V 0.5A TO-92 |
In Stock152 More on Order |
|
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 40V 0.5A TO-92 |
In Stock204 More on Order |
|
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |