Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 131A D3 |
In Stock105 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 131A (Tc) |
Rds On (Max) @ Id, Vgs: 20mOhm @ 100A, 20V |
Vgs(th) (Max) @ Id: 2.2V @ 5mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 1000V |
Power - Max: 625W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: D-3 Module |
Supplier Device Package: D3 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 55A SP1 |
In Stock309 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 55A (Tc) |
Rds On (Max) @ Id, Vgs: 49mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V |
Power - Max: 250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 1200V 78A SP6-P |
In Stock190 More on Order |
|
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 78A (Tc) |
Rds On (Max) @ Id, Vgs: 33mOhm @ 60A, 20V |
Vgs(th) (Max) @ Id: 2.2V @ 3mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs: 148nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 1000V |
Power - Max: 370W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6-P |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 25A 24PQFN |
In Stock457 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 25A |
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 35µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V |
Power - Max: 25W, 28W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: Dual PQFN (5x4) |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N-CH 24V 8A ECH8 |
In Stock226 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss): 24V |
Current - Continuous Drain (Id) @ 25°C: 8A (Ta) |
Rds On (Max) @ Id, Vgs: 23mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SMD, Flat Lead |
Supplier Device Package: 8-ECH |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 60V 3A/2.5A VEC8 |
In Stock336 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A |
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V |
Power - Max: 1W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SMD, Flat Lead |
Supplier Device Package: SOT-28FL/VEC8 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V 6UDFN |
In Stock201 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A |
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: U-DFN2020-6 (Type B) |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4.7A 6UDFN |
In Stock230 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.7A |
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: U-DFN2020-6 (Type B) |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 3.2A 6UDFN |
In Stock225 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.2A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: U-DFN2020-6 (Type B) |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 3.2A 6UDFN |
In Stock431 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.2A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: U-DFN2020-6 (Type B) |
|
|
Renesas Electronics America |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 12V |
In Stock190 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.8W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-XFLGA |
Supplier Device Package: 6-EFLIP-LGA (2.17x1.47) |
|
|
Trinamic Motion Control GmbH |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8PQFN |
In Stock475 More on Order |
|
Series: - |
FET Type: N and P-Channel, Common Drain |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 7.3A, 5.3A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V |
Power - Max: 2.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: 8-PQFN (3x3) |
|
|
Trinamic Motion Control GmbH |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N/2P-CH 30V 8SOIC |
In Stock126 More on Order |
|
Series: - |
FET Type: 2 N and 2 P-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.1A |
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 25V |
Power - Max: 1.38W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Trinamic Motion Control GmbH |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 40V 8PQFN |
In Stock464 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 8.8A, 7.3A |
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V |
Power - Max: 3.57W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: PQFN (5x6) |
|
|
Trinamic Motion Control GmbH |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 60V TO252-4 |
In Stock187 More on Order |
|
Series: - |
FET Type: N and P-Channel, Common Drain |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 6.6A, 4.7A |
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V |
Power - Max: 3.13W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Supplier Device Package: TO-252-4L |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8DFN |
In Stock183 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A |
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V |
Power - Max: 1.13W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: 8-DFN (5x6) |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8DFN |
In Stock416 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A |
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V |
Power - Max: 1.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: 8-DFN (5x6) |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8DFN |
In Stock104 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A |
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V |
Power - Max: 1.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: 8-DFN (5x6) |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8DFN |
In Stock317 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A |
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V |
Power - Max: 1.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: 8-DFN (5x6) |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 14A DPAK |
In Stock260 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 14A |
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 2103pF @ 25V |
Power - Max: 3.8W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Supplier Device Package: D-Pak 5-Lead |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 12V 11A EMH8 |
In Stock382 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 11A |
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.3W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SMD, Flat Lead |
Supplier Device Package: SOT-383FL, EMH8 |
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 5A ECH8 |
In Stock448 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 8-SMD, Flat Lead |
Supplier Device Package: 8-ECH |
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 12V 6A CSP4 |
In Stock160 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 4-XFBGA |
Supplier Device Package: - |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 3A EMH8 |
In Stock131 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate, 1.8V Drive |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3A |
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V |
Power - Max: 1W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SMD, Flat Lead |
Supplier Device Package: 8-EMH |
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 50V 0.14A MCPH6 |
In Stock159 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate, 4V Drive |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 140mA |
Rds On (Max) @ Id, Vgs: 22Ohm @ 40mA, 10V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 1.32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 6.2pF @ 10V |
Power - Max: 800mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, Flat Leads |
Supplier Device Package: 6-MCPH |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET PCH DUAL MCPH6 |
In Stock358 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8DFN |
In Stock348 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A |
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V |
Power - Max: 1.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: 8-DFN (5x6) |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8DFN |
In Stock437 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A |
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V |
Power - Max: 1.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: 8-DFN (5x6) |
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.43A SOT563 |
In Stock107 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 430mA |
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V |
Power - Max: 250mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563-6 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.54A SOT563 |
In Stock419 More on Order |
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Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 540mA |
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V |
Power - Max: 250mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563-6 |