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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 63/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 25A 8-DFN |
In Stock212 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 25A |
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 15V |
Power - Max: 4.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SMD, Flat Lead Exposed Pad |
Supplier Device Package: 8-DFN-EP (5.2x5.55) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 17A/32A TISON8 |
In Stock162 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 17A, 32A |
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: PG-TISON-8 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 17A/32A TISON8 |
In Stock325 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 17A, 32A |
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: PG-TISON-8 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 60V 2.9A 8-SOIC |
In Stock118 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) |
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12.1nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V |
Power - Max: 2.15W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 60V 2.9A 8-SOIC |
In Stock105 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 2.9A |
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V |
Power - Max: 1.25W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6A SOP8 |
In Stock172 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SMD, Gull Wing |
Supplier Device Package: 8-SOP (5.0x6.0) |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4.3A/3.6A 6DFN |
In Stock480 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.6A |
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.3A, 4.5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V |
Power - Max: 1.74W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-VDFN Exposed Pad |
Supplier Device Package: 6-DFN (3x3) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 8TDSON |
In Stock288 More on Order |
|
Series: Automotive, AEC-Q101, OptiMOS™ |
FET Type: N and P-Channel Complementary |
FET Feature: Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A |
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V |
Vgs(th) (Max) @ Id: 1.4V @ 110µA |
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V |
Power - Max: 2.5W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: PG-TSDSON-8 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON |
In Stock103 More on Order |
|
Series: Automotive, AEC-Q101, OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 20A |
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 16µA |
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V |
Power - Max: 43W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount, Wettable Flank |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PG-TDSON-8-10 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON |
In Stock164 More on Order |
|
Series: Automotive, AEC-Q101, OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 20A |
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 4V @ 15µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V |
Power - Max: 41W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount, Wettable Flank |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PG-TDSON-8-10 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 P-CH 26A POWERDI5060-8 |
In Stock172 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: 26A (Tc) |
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V |
Power - Max: - |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: PowerDI5060-8 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 8A 8-SOIC |
In Stock315 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 8A |
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V |
Power - Max: 2.8W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 6A PPAK 1212-8 |
In Stock188 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6A |
Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® 1212-8 Dual |
Supplier Device Package: PowerPAK® 1212-8 Dual |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6-TSOP |
In Stock476 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.15W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8A 8SO |
In Stock120 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8A |
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V |
Power - Max: 3.6W, 2.8W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 2A TSMT8 |
In Stock454 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: - |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2A |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 8-SMD, Flat Lead |
Supplier Device Package: TSMT8 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays 40V 11.7 MOHM T8 S08FL DU |
In Stock207 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc) |
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V |
Power - Max: 3.1W (Ta), 28W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 9A 8SOP |
In Stock354 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9A |
Rds On (Max) @ Id, Vgs: 21mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays AFSM T6 40V LL U8FL |
In Stock309 More on Order |
|
Series: - |
FET Type: N-Channel |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 51A (Tc) |
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: 8-WDFN (3.3x3.3) |
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Monolithic Power Systems Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 3N-CH 600V 0.08A 8SOIC |
In Stock278 More on Order |
|
Series: - |
FET Type: 3 N-Channel, Common Gate |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: 190Ohm @ 10mA, 10V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.3W |
Operating Temperature: -20°C ~ 125°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V V-DFN5045- |
In Stock406 More on Order |
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Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 13A (Ta) |
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V |
Power - Max: 1.3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 12-PowerVDFN |
Supplier Device Package: V-DFN5045-12 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 3.5A 8SOIC |
In Stock464 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 3.5A |
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 41V-60V POWERDI506 |
In Stock101 More on Order |
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Series: Automotive, AEC-Q101 |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc) |
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V |
Power - Max: 2.5W (Ta), 37.5W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: PowerDI5060-8 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 41V-60V POWERDI506 |
In Stock465 More on Order |
|
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 40V 6.1A/5.3A 8SOP |
In Stock359 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A |
Rds On (Max) @ Id, Vgs: 32mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V |
Power - Max: 450mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 30V 55A/85A 8DFN |
In Stock315 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc) |
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V |
Power - Max: 24W, 39W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-VDFN Exposed Pad |
Supplier Device Package: 8-DFN (5x6) |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 7A SO8FL |
In Stock370 More on Order |
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Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 7A |
Rds On (Max) @ Id, Vgs: 33mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V |
Power - Max: 3.2W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 80V 3.4A/2.6A 8SOP |
In Stock265 More on Order |
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Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate, 4V Drive |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A |
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays 40V 8.1 MOHM T8 S08FL DUA |
In Stock430 More on Order |
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Series: - |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 55V 20A TDSON-8-4 |
In Stock205 More on Order |
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Series: OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 20A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 2V @ 19µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V |
Power - Max: 51W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PG-TDSON-8-4 |