Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Cree/Wolfspeed |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 1200V 87A MODULE |
In Stock624 More on Order |
|
Series: Z-FET™ Z-Rec™ |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 87A (Tc) |
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V |
Vgs(th) (Max) @ Id: 2.3V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: 2.810nF @ 800V |
Power - Max: 337W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: Module |
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays SIC POWER MODULE |
In Stock465 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 180A (Tc) |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 5.6V @ 50mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V |
Power - Max: 880W |
Operating Temperature: 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Module |
Supplier Device Package: Module |
|
|
Cree/Wolfspeed |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1700V 325A MODULE |
In Stock415 More on Order |
|
Series: Z-Rec® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1700V (1.7kV) |
Current - Continuous Drain (Id) @ 25°C: 325A (Tc) |
Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V |
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V |
Power - Max: 1760W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: Module |
|
|
Cree/Wolfspeed |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 444A MODULE |
In Stock389 More on Order |
|
Series: Z-REC™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 444A (Tc) |
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 400A, 20V |
Vgs(th) (Max) @ Id: 4V @ 105mA |
Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 3000W |
Operating Temperature: 175°C (TJ) |
Mounting Type: - |
Package / Case: Module |
Supplier Device Package: Module |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.3A |
In Stock111,066 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 300mA |
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V |
Power - Max: 285mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.17A US6 |
In Stock44,411 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 170mA |
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V |
Power - Max: 285mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 0.1A VMT6 |
In Stock24,690 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate, 1.2V Drive |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 100mA |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V |
Power - Max: 120mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, Flat Leads |
Supplier Device Package: VMT6 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT563 |
In Stock34,314 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA |
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V |
Power - Max: 450mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.2A EMT6 |
In Stock134,473 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate, 0.9V Drive |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 200mA |
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id: 800mV @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V |
Power - Max: 120mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: EMT6 |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.18A 6TSSOP |
In Stock44,760 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 180mA |
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V |
Power - Max: 375mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.35A SOT-666 |
In Stock5,779 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 350mA |
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V |
Power - Max: 330mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.1A 2-2J1C |
In Stock19,180 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 100mA |
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V |
Power - Max: 300mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.18A SOT363 |
In Stock269,052 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 180mA |
Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V |
Power - Max: 300mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.2A UMT6 |
In Stock4,974 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate, 1.2V Drive |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 200mA |
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V |
Power - Max: 120mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: UMT6 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.26A SOT563 |
In Stock97,081 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 260mA |
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V |
Power - Max: 450mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.22A SOT363 |
In Stock4,686 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 220mA |
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V |
Power - Max: 300mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT26 |
In Stock558,056 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A |
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V |
Power - Max: 1.12W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 |
Supplier Device Package: SOT-26 |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.2A SOT666 |
In Stock207,502 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 200mA |
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V |
Power - Max: 375mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.1A SSMINI6 |
In Stock50,781 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 100mA |
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V |
Power - Max: 125mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SSMini6-F3-B |
|
|
Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.1A SSMINI6 |
In Stock11,641 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 100mA |
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V |
Power - Max: 125mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SSMini6-F3-B |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 210MA 6TSSOP |
In Stock3,947 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V |
Power - Max: 320mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.32A 6TSSOP |
In Stock18,401 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 320mA |
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V |
Power - Max: 420mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.4A SOT666 |
In Stock14,648 More on Order |
|
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 400mA |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V |
Power - Max: 500mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.9A SOT363 |
In Stock54,045 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 900mA |
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V |
Power - Max: 450mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.54A SOT563 |
In Stock15,337 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 540mA |
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V |
Power - Max: 250mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563-6 |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.1A ES6 |
In Stock58,225 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 100mA |
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V |
Power - Max: 150mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 (1.6x1.6) |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.49A 6TSSOP |
In Stock18,071 More on Order |
|
Series: TrenchMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 490mA |
Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V |
Power - Max: 410mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 0.22A SOT666 |
In Stock21,759 More on Order |
|
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 220mA |
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V |
Power - Max: 500mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 1A SOT363 |
In Stock489,015 More on Order |
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Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 1A |
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V |
Vgs(th) (Max) @ Id: 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V |
Power - Max: 320mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.35A |
In Stock25,083 More on Order |
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Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 350mA |
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V |
Power - Max: 320mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |