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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 1/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 100V 1A BUMPED DIE |
In Stock547,671 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 600µA |
Gate Charge (Qg) (Max) @ Vgs: 0.91nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 60V 1A BUMPED DIE |
In Stock8,219 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 800µA |
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 30V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GAN TRANS 100V 2.8OHM BUMPED DIE |
In Stock191,355 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: 0.044nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 8.4pF @ 50V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET NCH 15V 3.4A DIE |
In Stock112,765 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 15V |
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 0.93nC @ 5V |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 6V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GAN TRANS 100V 550MOHM BUMPED DI |
In Stock102,489 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 550mOhm @ 100mA, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs: 0.12nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 50V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 40V 10A BUMPED DIE |
In Stock66,133 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die Outline (5-Solder Bar) |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 80V BUMPED DIE |
In Stock184,470 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 40V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 100V 6A BUMPED DIE |
In Stock23,228 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA |
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 50V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die Outline (5-Solder Bar) |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 100V 18A BUMPED DIE |
In Stock380,252 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 200V 5A BUMPED DIE |
In Stock15,640 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die Outline (4-Solder Bar) |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GAN TRANS 200V 8.5A BUMPED DIE |
In Stock11,709 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 100V 36A BUMPED DIE |
In Stock102,387 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 36A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 50V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die Outline (11-Solder Bar) |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 40V 33A BUMPED DIE |
In Stock12,187 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 53A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 33A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 9mA |
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 20V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 40V BUMPED DIE |
In Stock2,494 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 16A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 200V 22A BUMPED DIE |
In Stock13,060 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 22A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die Outline (7-Solder Bar) |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET NCH 60V 31A DIE |
In Stock4,820 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 31A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 15mA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET NCH 60V 31A DIE |
In Stock3,956 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 31A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 15mA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 80V 31A BUMPED DIE |
In Stock5,523 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 48A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 12mA |
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 40V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET NCH 40V 31A DIE |
In Stock12,744 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 31A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 16mA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET NCH 40V 31A DIE |
In Stock4,373 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 31A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 16mA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GAN TRANS 100V 3MOHM BUMPED DIE |
In Stock7,248 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 12mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 50V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
|
|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 30V 60A BUMPED DIE |
In Stock8,678 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 40A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
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|
|
EPC |
Transistors - FETs, MOSFETs - Single GANFET NCH 40V 60A DIE |
In Stock2,292 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 37A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 19mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
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EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 60V 90A BUMPED DIE |
In Stock7,375 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 90A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 31A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 16mA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 30V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
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|
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EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 80V 90A BUMPED DIE |
In Stock4,960 More on Order |
|
Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 90A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 29A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 14mA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 40V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
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EPC |
Transistors - FETs, MOSFETs - Single GAN TRANS 150V 7MOHM BUMPED DIE |
In Stock5,389 More on Order |
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Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 31A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 9mA |
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 75V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
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EPC |
Transistors - FETs, MOSFETs - Single GANFET TRANS 100V 48A BUMPED DIE |
In Stock136 More on Order |
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Series: eGaN® |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 48A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 11mA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V |
Vgs (Max): +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 50V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Die |
Package / Case: Die |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 1.8A SOT223 |
In Stock5,767 More on Order |
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Series: SuperMESH3™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 400V |
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 3.3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 4A SOT223 |
In Stock12,559 More on Order |
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Series: STripFET™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.3W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET P CH 60V 10A DPAK |
In Stock8,730 More on Order |
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Series: DeepGATE™, STripFET™ VI |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 48V |
FET Feature: - |
Power Dissipation (Max): 35W (Tc) |
Operating Temperature: 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |