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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 110/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYS |
Transistors - FETs, MOSFETs - Single 200V/220A ULTRA JUNCTION X3-CLAS |
In Stock666 More on Order |
|
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 220A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 204nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 960W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-268HV |
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 78A TO264 |
In Stock485 More on Order |
|
Series: HiPerFET™, Polar3™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 78A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 147nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1130W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264AA (IXFK) |
Package / Case: TO-264-3, TO-264AA |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single SIC MOS TO247-3L 80MW 120 |
In Stock492 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 20V |
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id: 4.3V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V |
Vgs (Max): +25V, -15V |
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 800V |
FET Feature: - |
Power Dissipation (Max): 348W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 72.8A TO247-3 |
In Stock508 More on Order |
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Series: SupreMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 72.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 38mOhm @ 38A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 11045pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 543W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 12A TO-247 |
In Stock502 More on Order |
|
Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 950mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 298W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 [B] |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 58A TO-247 |
In Stock2,646 More on Order |
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Series: MDmesh™ V |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 45mOhm @ 29A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 6420pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 330W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 360A PLUS247 |
In Stock2,964 More on Order |
|
Series: GigaMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 360A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 715nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 47500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1670W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PLUS247™-3 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 69A TO-247 |
In Stock1,126 More on Order |
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Series: MDmesh™ V |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 69A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 38mOhm @ 34.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V |
Vgs (Max): 25V |
Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 400W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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Transphorm |
Transistors - FETs, MOSFETs - Single GANFET N-CH 650V 47A TO247-3 |
In Stock446 More on Order |
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Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 187W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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|
IXYS |
Transistors - FETs, MOSFETs - Single 300V/210A ULTRA JUNCTION X3-CLAS |
In Stock564 More on Order |
|
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 210A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 24.2nF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1250W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264 |
Package / Case: TO-264-3, TO-264AA |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 44A SOT-227B |
In Stock482 More on Order |
|
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 520W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 20A TO-247 |
In Stock328 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V |
FET Feature: Depletion Mode |
Power Dissipation (Max): 400W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 600A SOT-227 |
In Stock582 More on Order |
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Series: GigaMOS™, TrenchT2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 600A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 940W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 60A TO-264 |
In Stock582 More on Order |
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Series: Linear L2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 610nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 960W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264 (IXTK) |
Package / Case: TO-264-3, TO-264AA |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 90A SOT227 |
In Stock611 More on Order |
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Series: HiPerFET™, Polar3™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V |
Vgs(th) (Max) @ Id: 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 245nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1500W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 500V 40A SOT227 |
In Stock407 More on Order |
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Series: PolarP™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 230mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 890W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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IXYS |
Transistors - FETs, MOSFETs - Single 850V/90A ULT JUNC X-C HIPERFET P |
In Stock570 More on Order |
|
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 850V |
Current - Continuous Drain (Id) @ 25°C: 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 41mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 13300pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1785W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PLUS264™ |
Package / Case: TO-264-3, TO-264AA |
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Vishay Semiconductor Diodes Division |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 190A SOT227 |
In Stock492 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 190A |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V |
Vgs(th) (Max) @ Id: 4.35V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 568W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 |
Package / Case: SOT-227-4, miniBLOC |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 145A SOT-227 |
In Stock585 More on Order |
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Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 145A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 355nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 21000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1040W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 0.2A EMT3 |
In Stock15,457 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V |
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id: 800mV @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 150mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: EMT3 |
Package / Case: SC-75, SOT-416 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V TO-236AB |
In Stock4,174 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.49nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 20.2pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 310mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.15A CST3C |
In Stock12,237 More on Order |
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Series: U-MOSVII-H |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 500mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: CST3C |
Package / Case: SOT-1123 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET 2N-CH 60V SC-70 |
In Stock17,967 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-70 |
Package / Case: SC-70, SOT-323 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V SOT883 |
In Stock15,749 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN1006B-3 |
Package / Case: 3-XFDFN |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V SOT883 |
In Stock14,261 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN1006-3 |
Package / Case: SC-101, SOT-883 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 0.9A |
In Stock14,026 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: 1.05V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.16nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN1006-3 |
Package / Case: SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.4A |
In Stock3,775 More on Order |
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Series: U-MOSVII-H |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 270mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: S-Mini |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1A DFN1006B-3 |
In Stock15,358 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN1006B-3 |
Package / Case: 3-XFDFN |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.18A VML1006 |
In Stock12,689 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs: 2Ohm @ 150mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 100mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN1006-3 (VML1006) |
Package / Case: SC-101, SOT-883 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 0.9A XQFN3 |
In Stock30,109 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 470mOhm @ 900mA, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN1006-3 |
Package / Case: SC-101, SOT-883 |