Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 118/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V MLFPAK |
In Stock4,287 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1231pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 62W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK33 |
Package / Case: SOT-1210, 8-LFPAK33 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 5.7A MICROFET |
In Stock13,258 More on Order |
|
Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 935pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2.4W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-MicroFET (2x2) |
Package / Case: 6-WDFN Exposed Pad |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 25A SC-70-6 |
In Stock14,366 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 1V |
FET Feature: - |
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SC-70-6 Single |
Package / Case: PowerPAK® SC-70-6 |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 19A LFPAK |
In Stock2,671 More on Order |
|
Series: TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1023pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 64W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK56, Power-SO8 |
Package / Case: SC-100, SOT-669 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 2.9A MICRO2X2 |
In Stock29,514 More on Order |
|
Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 1.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-MicroFET (2x2) |
Package / Case: 6-VDFN Exposed Pad |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 32.3A DPAK |
In Stock9,396 More on Order |
|
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 32.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 872pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 77W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 4.5A TSMT6 |
In Stock7,882 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 600mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSMT6 (SC-95) |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 52A U8FL |
In Stock5,351 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1113pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 820mW (Ta), 25.5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-WDFN (3.3x3.3) |
Package / Case: 8-PowerWDFN |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6A 1206-8 |
In Stock8,389 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 1206-8 ChipFET™ |
Package / Case: 8-SMD, Flat Lead |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CHA 60V 9.2A SO8 |
In Stock3,287 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 30V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Texas Instruments |
Transistors - FETs, MOSFETs - Single 12V P-CHANNEL FEMTOFET MOSFET |
In Stock22,299 More on Order |
|
Series: FemtoFET™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V |
Vgs (Max): -6V |
Input Capacitance (Ciss) (Max) @ Vds: 628pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 500mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 3-PICOSTAR |
Package / Case: 3-XFDFN |
|
|
|
Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.9A PICOSTAR |
In Stock7,572 More on Order |
|
Series: FemtoFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 27mOhm @ 900mA, 10V |
Vgs(th) (Max) @ Id: 1.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V |
Vgs (Max): 20V |
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 500mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 3-PICOSTAR |
Package / Case: 3-XFDFN |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 81A DPAK |
In Stock3,490 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 81A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 13V |
FET Feature: - |
Power Dissipation (Max): 63W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5A 6SON |
In Stock7,184 More on Order |
|
Series: Automotive, AEC-Q100, NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V |
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V |
Vgs(th) (Max) @ Id: 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V |
Vgs (Max): +10V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-WSON (2x2) |
Package / Case: 6-WDFN Exposed Pad |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 30A TO252-3 |
In Stock8,629 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 31W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO252-3 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 90A TO252 |
In Stock3,475 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 88W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252, (D-Pak) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A 5X6 PQFN |
In Stock4,635 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.35V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3180pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 59W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PQFN (5x6) |
Package / Case: 8-PowerTDFN |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 70A LFPAK33 |
In Stock2,651 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 15V |
FET Feature: Schottky Diode (Body) |
Power Dissipation (Max): 65W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK33 |
Package / Case: SOT-1210, 8-LFPAK33 |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 20A 8-HSOP |
In Stock3,643 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3W (Ta), 25.1W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-HSOP |
Package / Case: 8-PowerTDFN |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V LFPAK56 |
In Stock8,094 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 53A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 33.2nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2603pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 95W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK56, Power-SO8 |
Package / Case: SC-100, SOT-669 |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V MLFPAK |
In Stock2,055 More on Order |
|
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 69A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 23.8nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1567pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 75W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK33 |
Package / Case: SOT-1210, 8-LFPAK33 |
|
|
|
Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 2.2A 4DSBGA |
In Stock28,969 More on Order |
|
Series: NexFET™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 53mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V |
Vgs (Max): -6V |
Input Capacitance (Ciss) (Max) @ Vds: 512pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 4-DSBGA (1x1) |
Package / Case: 4-UFBGA, DSBGA |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A TO252-3 |
In Stock4,371 More on Order |
|
Series: Automotive, AEC-Q101, OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 36W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO252-3-11 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 21.7A DPAK |
In Stock10,473 More on Order |
|
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 88W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3.7A MLP2X2 |
In Stock7,673 More on Order |
|
Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 1.4W (Tj) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-MicroFET (2x2) |
Package / Case: 6-VDFN Exposed Pad |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N CH 30V 20A 8SOP |
In Stock4,539 More on Order |
|
Series: U-MOSVIII-H |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.6W (Ta), 24W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOP Advance (5x5) |
Package / Case: 8-PowerVDFN |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 0.225A SOT223 |
In Stock5,712 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 225mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-73 |
Package / Case: TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A TDSON-8 |
In Stock43,986 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TDSON-8-5 |
Package / Case: 8-PowerTDFN |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A LFPAK |
In Stock13,076 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 2.15V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 69W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK56, Power-SO8 |
Package / Case: SC-100, SOT-669 |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 7.5A 8SOP |
In Stock3,267 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOP |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |