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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 140/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 23A TO-247AC |
In Stock601 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 190W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 560V 16A TO-247 |
In Stock449 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 560V |
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 675µA |
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 160W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3 |
Package / Case: TO-247-3 |
|
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 17.5A TO247 |
In Stock9,798 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 730µA |
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 151W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3 |
Package / Case: TO-247-3 |
|
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 23.8A TO220-FP |
In Stock1,315 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 750µA |
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 34W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-FP |
Package / Case: TO-220-3 Full Pack |
|
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20.2A TO247 |
In Stock1,348 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 630µA |
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 151W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3 |
Package / Case: TO-247-3 |
|
|
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 23.8A TO220 |
In Stock1,168 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 750µA |
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 176W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 29A D2PAK |
In Stock2,093 More on Order |
|
Series: Automotive, AEC-Q101, FDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 80.4nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 190W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 30A TO247 |
In Stock880 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 305W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO247 |
In Stock666 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 370mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 417W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
|
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO247 |
In Stock621 More on Order |
|
Series: aMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 4.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 1038pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 266W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 11A TO220FP |
In Stock1,574 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 48W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220-3 |
Package / Case: TO-220-3 Full Pack, Isolated Tab |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A TO220 |
In Stock1,325 More on Order |
|
Series: U-MOSVIII-H |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 255W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 120A TO220AB |
In Stock1,666 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 9620pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 370W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 72A TO220AB |
In Stock18,150 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 72A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 43A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 9540pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 61W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB Full-Pak |
Package / Case: TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 12A ITO220S |
In Stock3,454 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 400mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 1848pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 69W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ITO-220S |
Package / Case: TO-220-3 Full Pack |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 22.4A TO220 |
In Stock802 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 900µA |
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 195.3W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1500V 2A TO-220F |
In Stock758 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1500V |
Current - Continuous Drain (Id) @ 25°C: 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta), 35W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220F-3FS |
Package / Case: TO-220-3 Full Pack |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 9A TO-3P |
In Stock859 More on Order |
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Series: QFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 280W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-3P |
Package / Case: TO-3P-3, SC-65-3 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 31A TO-247AC |
In Stock1,259 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 77mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 180W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 50A TO-220 |
In Stock393 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 400W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 130A TO-3P |
In Stock577 More on Order |
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Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 130A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 360W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-3P |
Package / Case: TO-3P-3, SC-65-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A TO-220FP |
In Stock2,477 More on Order |
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Series: FDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 25W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220FP |
Package / Case: TO-220-3 Full Pack |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 19A D2PAK |
In Stock1,753 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.7W (Ta), 150W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 3.5A TO220FP |
In Stock1,516 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.1A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 40W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220-3 |
Package / Case: TO-220-3 Full Pack, Isolated Tab |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 22A TO220AB |
In Stock387 More on Order |
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Series: HiPerFET™, Polar3™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 500W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 40A TO-3P |
In Stock615 More on Order |
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Series: QFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 280W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-3PN |
Package / Case: TO-3P-3, SC-65-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 67A TO-220-3 |
In Stock2,404 More on Order |
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Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 67A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 67A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5270pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 43W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220F |
Package / Case: TO-220-3 Full Pack |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 4.7A TO-247AC |
In Stock885 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.8A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 150W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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Cree/Wolfspeed |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 11A |
In Stock1,588 More on Order |
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Series: C3M™ |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 15V |
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V |
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA |
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V |
Vgs (Max): +18V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V |
FET Feature: - |
Power Dissipation (Max): 50W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK-7 |
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 17A TO220SIS |
In Stock1,263 More on Order |
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Series: DTMOSIV |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 17A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 850µA |
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 300V |
FET Feature: - |
Power Dissipation (Max): 45W (Tc) |
Operating Temperature: 150°C |
Mounting Type: Through Hole |
Supplier Device Package: TO-220SIS |
Package / Case: TO-220-3 Full Pack |