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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 164/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SIRA16DP-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V D-S PPAK SO-8

In Stock7,741

More on Order

Series: TrenchFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
SI4058DY-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 10.3A 8SOIC

In Stock4,320

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 50V
FET Feature: -
Power Dissipation (Max): 5.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
NTHS5441T1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 3.9A CHIPFET

In Stock8,342

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 5V
FET Feature: -
Power Dissipation (Max): 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: ChipFET™
Package / Case: 8-SMD, Flat Lead
SISH625DN-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CHAN 30 V POWERPAK 1212

In Stock3,614

More on Order

Series: TrenchFET®
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4427pF @ 15V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
NVC3S5A51PLZT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CHANNEL 60V 1.8A 3-CPH

In Stock8,487

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 20V
FET Feature: -
Power Dissipation (Max): 1.2W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-CPH
Package / Case: TO-236-3, SC-59, SOT-23-3
DMN10H120SFG-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 3.8A POWERDI

In Stock3,899

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 549pF @ 50V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8
Package / Case: 8-PowerVDFN
DMN10H120SFG-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 3.8A POWERDI

In Stock437

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 549pF @ 50V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8
Package / Case: 8-PowerVDFN
NTLJS2103PTBG
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 12V 3.5A 6-WDFN

In Stock3,683

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Series: µCool™
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1157pF @ 6V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-WDFN (2x2)
Package / Case: 6-WDFN Exposed Pad
STL8P2UH7
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 8A POWERFLAT22

In Stock4,585

More on Order

Series: DeepGATE™, STripFET™ VII
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 16V
FET Feature: -
Power Dissipation (Max): 2.4W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFlat™ (2x2)
Package / Case: 6-PowerWDFN
STL7N6F7
STMicroelectronics

Transistors - FETs, MOSFETs - Single

N-CHANNEL 60 V, 0.019 OHM TYP.,

In Stock3,705

More on Order

Series: STripFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
FET Feature: -
Power Dissipation (Max): 2.4W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFlat™ (2x2)
Package / Case: 6-PowerWDFN
DMG7401SFGQ-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 9.8A PWRDI3333-8

In Stock3,181

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 2987pF @ 15V
FET Feature: -
Power Dissipation (Max): 940mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8
Package / Case: 8-PowerVDFN
SISH472DN-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V POWERPAK 1212

In Stock4,188

More on Order

Series: TrenchFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 15V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
NVGS3443T1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 2A 6-TSOP

In Stock44,098

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 5V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6
CMS16N06D-HF
Comchip Technology

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60VDS 20VGS 64A TO-2

In Stock3,640

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 15V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 27W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-PAK (TO-252)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
MCAC53N06Y-TP
Micro Commercial Co

Transistors - FETs, MOSFETs - Single

N-CHANNEL,MOSFETS,DFN5060 PACKAG

In Stock7,575

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1988pF @ 30V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN5060
Package / Case: 8-PowerVDFN
SI1467DH-T1-E3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 2.7A SC-70-6

In Stock4,896

More on Order

Series: TrenchFET®
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
TSM280NB06LCR RLG
Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET SINGLE N-CHANNEL TRENCH

In Stock7,134

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN
TSM150NB04CR RLG
Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET SINGLE N-CHANNEL TRENCH

In Stock4,152

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1092pF @ 20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN
TSM150NB04LCR RLG
Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET SINGLE N-CHANNEL TRENCH

In Stock3,959

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN
TSM300NB06CR RLG
Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET SINGLE N-CHANNEL TRENCH

In Stock3,420

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 30V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN
FDT86246L
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 2A SOT-223

In Stock5,464

More on Order

Series: PowerTrench®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 228mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 75V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223-4
Package / Case: TO-261-4, TO-261AA
IPN70R750P7SATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

COOLMOS P7 700V SOT-223

In Stock4,220

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Series: CoolMOS™ P7
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 400V
FET Feature: -
Power Dissipation (Max): 6.7W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223
Package / Case: TO-261-3
RQ5A040ZPTL
Rohm Semiconductor

Transistors - FETs, MOSFETs - Single

RQ5A040ZP IS A SMALL SIGNAL MOSF

In Stock4,894

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 6V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT3
Package / Case: SC-96
MCG30N03-TP
Micro Commercial Co

Transistors - FETs, MOSFETs - Single

N-CHANNEL MOSFETDFN3030

In Stock40,210

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 15V
FET Feature: -
Power Dissipation (Max): 25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN3030
Package / Case: 8-PowerVDFN
MCU10N10-TP
Micro Commercial Co

Transistors - FETs, MOSFETs - Single

N-CHANNELMOSFETDPAK

In Stock42,157

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.6A
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
MCU05N60A-TP
Micro Commercial Co

Transistors - FETs, MOSFETs - Single

N-CHANNEL MOSFET,DPAK

In Stock46,941

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
FET Feature: -
Power Dissipation (Max): 1.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMN4034SSS-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 5.4A 8SO

In Stock28,073

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
FET Feature: -
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
MCU20N06A-TP
Micro Commercial Co

Transistors - FETs, MOSFETs - Single

N-CHANNEL,MOSFETS,DPAK PACKAGE

In Stock10,556

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
MCQ12N06-TP
Micro Commercial Co

Transistors - FETs, MOSFETs - Single

N-CHANNEL,MOSFETS,SOP-8 PACKAGE

In Stock5,527

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1988pF @ 30V
FET Feature: -
Power Dissipation (Max): 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
MCU04N60-TP
Micro Commercial Co

Transistors - FETs, MOSFETs - Single

N-CHANNEL,MOSFETS,DPAK PACKAGE

In Stock4,261

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 4A
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63