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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 200/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.3A SOT323 |
In Stock467 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 300mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-323 |
Package / Case: SC-70, SOT-323 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V TO-236AB |
In Stock294 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 500mW (Ta), 5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4A MCPH6 |
In Stock260 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 83mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: 6-MCPH |
Package / Case: 6-SMD, Flat Leads |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A 8-HUML |
In Stock253 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 504pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: HUML2020L8 |
Package / Case: 8-PowerUDFN |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.9A 8DFN |
In Stock106 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V |
Vgs(th) (Max) @ Id: 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 1.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN3020B (3x2) |
Package / Case: 8-VDFN Exposed Pad |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Single N-CHANNEL MOSFET, SOT-523 PACKAG |
In Stock260 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V |
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 2.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 750nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V |
FET Feature: - |
Power Dissipation (Max): 150mW (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-523 |
Package / Case: SOT-523 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 4A TUMT3 |
In Stock255 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V |
Vgs (Max): -8V |
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 800mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TUMT3 |
Package / Case: 3-SMD, Flat Leads |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.4A SOT-23 |
In Stock376 More on Order |
|
Series: STripFET™ H7 |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 100mOhm @ 700mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 350mW (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9A 8-SOIC |
In Stock289 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOP |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
Transistors - FETs, MOSFETs - Single PMPB100ENE/SOT1220/SOT1220 |
In Stock465 More on Order |
|
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: DFN2020MD-6 |
Package / Case: 6-UDFN Exposed Pad |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 4.8A 6TSOP |
In Stock237 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.8A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 558pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-TSOP |
Package / Case: SC-74, SOT-457 |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 30A 8DFN |
In Stock125 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 4.1W (Ta), 24W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN-EP (3x3) |
Package / Case: 8-PowerVDFN |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.5A U-WLB1510-6 |
In Stock167 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 70mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 920mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: U-WLB1510-6 |
Package / Case: 6-UFBGA, WLBGA |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 10A UDFN6B |
In Stock175 More on Order |
|
Series: U-MOSVII |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V |
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 4.5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-UDFNB (2x2) |
Package / Case: 6-WDFN Exposed Pad |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.075A SOT23-3 |
In Stock200 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 75mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 330mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 10.4A 8SO |
In Stock137 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 13mOhm @ 10.4A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 45.7nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 2296pF @ 15V |
FET Feature: Schottky Diode (Body) |
Power Dissipation (Max): 1.55W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.15A SOT-1123 |
In Stock331 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 125mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-1123 |
Package / Case: SOT-1123 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 19A 8MLP |
In Stock4,982 More on Order |
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Series: PowerTrench®, SyncFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.4W (Ta), 36W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-MLP (3.3x3.3) |
Package / Case: 8-PowerWDFN |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6A TSOT26 |
In Stock293 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSOT-26 |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.1A MICROFOOT |
In Stock437 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 72mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 500mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 4-Microfoot |
Package / Case: 4-XFBGA |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 4.2A |
In Stock492 More on Order |
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Series: U-MOSIII |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V |
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 4V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 500mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: UF6 |
Package / Case: 6-SMD, Flat Leads |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1A SOT-23-3 |
In Stock431 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 5V |
FET Feature: - |
Power Dissipation (Max): 400mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Single N-CHANNEL MOSFET, SOP-8 PACKAGE |
In Stock130 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.4W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOP |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V TO-236AB |
In Stock331 More on Order |
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Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.1A, 10V |
Vgs(th) (Max) @ Id: 2.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 513mW (Ta), 6.4W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 12A SC-70-6L |
In Stock477 More on Order |
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Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: 850mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 19W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SC-70-6 Single |
Package / Case: PowerPAK® SC-70-6 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET P CH 20V 6A UF6 |
In Stock399 More on Order |
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Series: U-MOSVI |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: UF6 |
Package / Case: 6-SMD, Flat Leads |
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Nexperia |
Transistors - FETs, MOSFETs - Single PMPB29XPEA/SOT1220/SOT1220 |
In Stock291 More on Order |
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Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN2020MD-6 |
Package / Case: 6-UDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 4.2A UFM |
In Stock147 More on Order |
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Series: U-MOSIII |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V |
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 4V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 500mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: UFM |
Package / Case: 3-SMD, Flat Leads |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 6A DFN202 |
In Stock267 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id: 0.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 4V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN2020-6J |
Package / Case: 6-WDFN Exposed Pad |
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Microchip Technology |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 8PDFN |
In Stock263 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 48A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10V |
Vgs(th) (Max) @ Id: 1.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V |
Vgs (Max): +10V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 12.5V |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PDFN (3x3) |
Package / Case: 8-PowerTDFN |