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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 204/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 10.8A 8-SOIC |
In Stock8,244 More on Order |
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Series: Automotive, AEC-Q101, PowerTrench® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 13mOhm @ 10.5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2005pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.6W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single 30V N-CHANNEL MOSFET |
In Stock131 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 5W (Ta), 28W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN-EP (3x3) |
Package / Case: 8-PowerVDFN |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.5A TSMT5 |
In Stock397 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 81mOhm @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 1.25W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSMT5 |
Package / Case: SOT-23-5 Thin, TSOT-23-5 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.4A SOT23 |
In Stock316 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.18nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 5V |
FET Feature: - |
Power Dissipation (Max): 225mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Single N-CHANNEL,MOSFETS,SOT-523 PACKAG |
In Stock304 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 750mA |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V |
FET Feature: - |
Power Dissipation (Max): 150mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-523 |
Package / Case: SOT-523 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 4.5A TUMT6 |
In Stock268 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V |
Rds On (Max) @ Id, Vgs: 23.7mOhm @ 4.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TUMT6 |
Package / Case: 6-SMD, Flat Leads |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 20A 69A 5DFN |
In Stock172 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 5-DFN (5x6) (8-SOFL) |
Package / Case: 8-PowerTDFN, 5 Leads |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 0.2A S-MINI |
In Stock438 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V |
Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 3V |
FET Feature: - |
Power Dissipation (Max): 200mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-59 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 40A PPAK SO-8 |
In Stock4,605 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 5W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
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Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.2A 6DSBGA |
In Stock177 More on Order |
|
Series: NexFET™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 33mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V |
Vgs (Max): -6V |
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-DSBGA (1x1.5) |
Package / Case: 6-UFBGA, DSBGA |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Single N-CHANNEL MOSFET, SOP-8 PACKAGE |
In Stock121 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 36mOhm @ 7.9A, 4.5V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOP |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.5A PPAK SC70-6 |
In Stock391 More on Order |
|
Series: LITTLE FOOT® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 10V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SC-70-6 Dual |
Package / Case: PowerPAK® SC-70-6 Dual |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 4.5A MCPH3 |
In Stock348 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 2.5V |
Vgs(th) (Max) @ Id: 800mV @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 2.5V |
Vgs (Max): ±5V |
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-70FL/MCPH3 |
Package / Case: 3-SMD, Flat Leads |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12.4A TO252 |
In Stock336 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.6W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 2.5A WEMT6 |
In Stock104 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 62mOhm @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V |
Vgs (Max): -8V |
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 400mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-WEMT |
Package / Case: SOT-563, SOT-666 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A 8-HSOP |
In Stock462 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 13A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3W (Ta), 22.2W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-HSOP |
Package / Case: 8-PowerTDFN |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 1.87A TSOT26 |
In Stock244 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 401pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.67W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSOT-26 |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 12V 3.5A |
In Stock376 More on Order |
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Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 4.5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 1.9W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-DSBGA (1x1.5) |
Package / Case: 6-UFBGA, DSBGA |
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Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Single CSP SINGLE N-CHANNEL MOSFET |
In Stock2,198 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 236µA |
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 360mW (Ta) |
Operating Temperature: -40°C ~ 85°C (TA) |
Mounting Type: Surface Mount |
Supplier Device Package: XLGA004-W-0808-RA01 |
Package / Case: 4-XFLGA, CSP |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A 8SOIC |
In Stock232 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 13A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 8SOIC |
In Stock313 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 26A D2PAK |
In Stock5,662 More on Order |
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Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 58mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 1924pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 106W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 20A 8PSOP |
In Stock3,895 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PSOP |
Package / Case: 8-SMD, Flat Lead |
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Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 12V 31A 6DSBGA |
In Stock117 More on Order |
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Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 31A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 1.65W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-DSBGA |
Package / Case: 6-UFBGA, DSBGA |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.1A ES6 |
In Stock4,736 More on Order |
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Series: π-MOSVI |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V |
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 3V |
FET Feature: - |
Power Dissipation (Max): 150mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: ES6 |
Package / Case: SOT-563, SOT-666 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 1A CPH3 |
In Stock392 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 785mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 3-CPH |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 1.4A TUMT3 |
In Stock320 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V |
Vgs (Max): 20V |
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 800mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TUMT3 |
Package / Case: 3-SMD, Flat Leads |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 10A 8HUML |
In Stock305 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V |
Vgs (Max): -8V |
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: HUML2020L8 |
Package / Case: 8-PowerUDFN |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 21A 8-TSSOP |
In Stock461 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-TSSOP |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A 8-TSSOP |
In Stock278 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 8V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 1304pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.4W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-TSSOP |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |