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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 23/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8SON |
In Stock3,102 More on Order |
|
Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V |
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 8V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V |
Vgs (Max): +10V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12.5V |
FET Feature: - |
Power Dissipation (Max): 3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-VSONP (5x6) |
Package / Case: 8-PowerTDFN |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 18A 8-SOIC |
In Stock3,959 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 60A 8SON |
In Stock14,732 More on Order |
|
Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V |
Vgs (Max): +10V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 12.5V |
FET Feature: - |
Power Dissipation (Max): 3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-VSON-CLIP (3.3x3.3) |
Package / Case: 8-PowerTDFN |
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Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 50 8SON |
In Stock16,162 More on Order |
|
Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 50A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 3.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 3.2W (Ta), 63W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-VSONP (5x6) |
Package / Case: 8-PowerTDFN |
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Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 3.3X3.3 8-SON |
In Stock95,863 More on Order |
|
Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V |
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 24A, 8V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V |
Vgs (Max): +10V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 12.5V |
FET Feature: - |
Power Dissipation (Max): 3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-VSON-CLIP (3.3x3.3) |
Package / Case: 8-PowerTDFN |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SOT223 |
In Stock17,377 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 450MA SOT223 |
In Stock8,335 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 50A TDSON-8 |
In Stock100,490 More on Order |
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Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 35µA |
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 69W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TDSON-8-5 |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 55V 31A DPAK |
In Stock15,496 More on Order |
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Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 110W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 35V 13A DPAK |
In Stock13,213 More on Order |
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Series: PowerTrench® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 35V |
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 57W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-PAK (TO-252) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 60A 8-SON |
In Stock16,887 More on Order |
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Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V |
Vgs (Max): +16V, -12V |
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12.5V |
FET Feature: - |
Power Dissipation (Max): 2.7W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-VSON-CLIP (3.3x3.3) |
Package / Case: 8-PowerTDFN |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 35A 1212-8 PPAK |
In Stock102,972 More on Order |
|
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4427pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.7W (Ta), 52W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® 1212-8 |
Package / Case: PowerPAK® 1212-8 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N CH 30V 65A DPAK |
In Stock41,759 More on Order |
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Series: STripFET™ V |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 32.5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V |
Vgs (Max): ±22V |
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 60A 8SON |
In Stock7,055 More on Order |
|
Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V |
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 8V |
Vgs(th) (Max) @ Id: 1.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V |
Vgs (Max): +10V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-VSON-CLIP (3.3x3.3) |
Package / Case: 8-PowerTDFN |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 8.4A DPAK |
In Stock37,478 More on Order |
|
Series: PowerTrench® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 69W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-PAK (TO-252AA) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 8A DPAK |
In Stock10,328 More on Order |
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Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 54W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-PAK (TO-252) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 16A TO-252AA |
In Stock8,971 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V |
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250mA |
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 60W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252AA |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 60A 8SON |
In Stock87,309 More on Order |
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Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V |
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 8V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V |
Vgs (Max): +10V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12.5V |
FET Feature: - |
Power Dissipation (Max): 3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-VSON-CLIP (3.3x3.3) |
Package / Case: 8-PowerTDFN |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 82A LFPAK |
In Stock16,986 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 82A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 130W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK56, Power-SO8 |
Package / Case: SC-100, SOT-669 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 10.8A DPAK |
In Stock17,653 More on Order |
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Series: Automotive, AEC-Q101, PowerTrench® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12.7A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2775pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 2.4W (Ta), 69W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-PAK (TO-252AA) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30MA SOT89-3 |
In Stock5,312 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): 0V |
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V |
FET Feature: Depletion Mode |
Power Dissipation (Max): 1.6W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-89-3 |
Package / Case: TO-243AA |
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Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 104A 8VSON |
In Stock20,218 More on Order |
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Series: NexFET™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 104A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V |
Vgs(th) (Max) @ Id: 1.15V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14.1nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta), 96W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-VSON (3.3x3.3) |
Package / Case: 8-PowerVDFN |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 150V 2.17A 1212-8 |
In Stock9,180 More on Order |
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Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® 1212-8 |
Package / Case: PowerPAK® 1212-8 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A 8-SOIC |
In Stock3,283 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.47W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 1.7A 8-SOIC |
In Stock3,301 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 73A |
In Stock10,568 More on Order |
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Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 73A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 46A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 46µA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 100W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO252-3 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 11A DPAK |
In Stock4,200 More on Order |
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Series: PowerTrench® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 52W (Ta) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 65A 8SON |
In Stock50,117 More on Order |
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Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 506pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-VSONP (5x6) |
Package / Case: 8-PowerTDFN |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 68A TRENCH 8WDFN |
In Stock6,490 More on Order |
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Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 4V @ 70µA |
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 3.2W (Ta), 107W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-WDFN (3.3x3.3) |
Package / Case: 8-PowerWDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 20A TSDSON-8 |
In Stock12,136 More on Order |
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Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 35µA |
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 69W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TSDSON-8 |
Package / Case: 8-PowerVDFN |