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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 297/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single N-CHANNEL 600 V, 0.032 OHM TYP., |
In Stock428 More on Order |
|
Series: MDmesh™ DM6 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 72A |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 Long Leads |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single N-CHANNEL 600 V, 0.037OHM TYP., |
In Stock476 More on Order |
|
Series: MDmesh™ DM6 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 62A |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single N-CHANNEL 600 V, 0.037 OHM TYP., |
In Stock339 More on Order |
|
Series: MDmesh™ DM6 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 62A |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 Long Leads |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single N-CHANNEL 600 V 32 MOHM TYP. 72 |
In Stock484 More on Order |
|
Series: MDmesh™ M6 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 72A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 36mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id: 4.75V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 446W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 Long Leads |
Package / Case: TO-247-3 |
|
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single N-CHANNEL 600 V 32 MOHM TYP. 72 |
In Stock545 More on Order |
|
Series: MDmesh™ M6 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 72A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 36mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id: 4.75V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 446W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-4 |
Package / Case: TO-247-4 |
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|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 34A TO-247 |
In Stock371 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 210mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 6640pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 624W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 [B] |
Package / Case: TO-247-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 37A T-MAX |
In Stock457 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1135W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: T-MAX™ [B2] |
Package / Case: TO-247-3 Variant |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 14A TO-247 |
In Stock224 More on Order |
|
Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 780mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 403W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 [B] |
Package / Case: TO-247-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 29A TO264 |
In Stock331 More on Order |
|
Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 530mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1135W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264 [L] |
Package / Case: TO-264-3, TO-264AA |
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|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 94A TO264 |
In Stock367 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 94A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 35mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA |
Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 833W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: 264 MAX™ [L2] |
Package / Case: TO-264-3, TO-264AA |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 41A SOT-227 |
In Stock441 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 41A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 378W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 |
Package / Case: SOT-227-4, miniBLOC |
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IXYS-RF |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 55A SOT227B |
In Stock467 More on Order |
|
Series: HiPerRF™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 85mOhm @ 27.5A, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 600W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 33A SOT-227 |
In Stock287 More on Order |
|
Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 200mOhm @ 16.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 520W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: SOT-227-4, miniBLOC |
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GeneSiC Semiconductor |
Transistors - FETs, MOSFETs - Single TRANS SJT 100V 9A |
In Stock513 More on Order |
|
Series: - |
FET Type: - |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 240mOhm @ 5A |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 20W (Tc) |
Operating Temperature: -55°C ~ 225°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-46 |
Package / Case: TO-46-3 |
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GeneSiC Semiconductor |
Transistors - FETs, MOSFETs - Single TRANS SJT 300V 9A |
In Stock264 More on Order |
|
Series: - |
FET Type: - |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 240mOhm @ 5A |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 20W (Tc) |
Operating Temperature: -55°C ~ 225°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-46 |
Package / Case: TO-46-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET COOLMOS 700V TO251-3 |
In Stock668 More on Order |
|
Series: CoolMOS™ P7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 700V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 400V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 174pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 25W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO251-3 |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET TO251-3 |
In Stock828 More on Order |
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Series: CoolMOS™ P7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 700V |
Current - Continuous Drain (Id) @ 25°C: 3A |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 30µA |
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 400V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 17.6W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO251-3-347 |
Package / Case: TO-251-3 Stub Leads, IPak |
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Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 50A 8VSON |
In Stock1,327 More on Order |
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Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 50A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 77W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-VSONP (5x6) |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220-3 |
In Stock645 More on Order |
|
Series: CoolMOS™ P7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 700V |
Current - Continuous Drain (Id) @ 25°C: 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 60µA |
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 400V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 211pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 20.5W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220 Full Pack |
Package / Case: TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single PB-F POWER MOSFET TRANSISTOR TO- |
In Stock692 More on Order |
|
Series: U-MOSIX |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1.9A, 10V |
Vgs(th) (Max) @ Id: 4V @ 400µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V |
FET Feature: - |
Power Dissipation (Max): 30W (Tc) |
Operating Temperature: 150°C |
Mounting Type: Through Hole |
Supplier Device Package: TO-220SIS |
Package / Case: TO-220-3 Full Pack |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 450V 1.8A IPAK |
In Stock1,681 More on Order |
|
Series: SuperMESH3™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 450V |
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.8Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 27W (Tc) |
Operating Temperature: - |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET COOLMOS 700V TO251-3 |
In Stock700 More on Order |
|
Series: CoolMOS™ P7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 700V |
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 70µA |
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 20.8W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220 Full Pack |
Package / Case: TO-220-3 Full Pack |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220-3 |
In Stock850 More on Order |
|
Series: CoolMOS™ P7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 700V |
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 70µA |
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 400V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 21.2W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220 Full Pack |
Package / Case: TO-220-3 Full Pack |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 525V 4.4A TO-220FP |
In Stock1,408 More on Order |
|
Series: SuperMESH3™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 525V |
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 25W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220FP |
Package / Case: TO-220-3 Full Pack |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET COOLMOS 700V TO251-3 |
In Stock940 More on Order |
|
Series: CoolMOS™ P7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 700V |
Current - Continuous Drain (Id) @ 25°C: 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 60µA |
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 211pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 17.9W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220 Full Pack |
Package / Case: TO-220-3 Full Pack |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 10A IPAK |
In Stock1,201 More on Order |
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Series: STripFET™ II |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 40W (Tc) |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 43.5A D2PAK |
In Stock1,475 More on Order |
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Series: QFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.75W (Ta), 146W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D²PAK (TO-263AB) |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 11.4A TO-220 |
In Stock1,407 More on Order |
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Series: QFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 175mOhm @ 5.7A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 53W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220-3 |
Package / Case: TO-220-3 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 14A DPAK |
In Stock571 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 42W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 3.8A TO-220 |
In Stock866 More on Order |
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Series: QFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.9A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 45W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220-3 |
Package / Case: TO-220-3 |