Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 351/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A TO220-3 |
In Stock380 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 275µA |
Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 300W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 34A |
In Stock255 More on Order |
|
Series: MDmesh™ DM2 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 250W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 |
Package / Case: TO-220-3 |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 11A TO-220 |
In Stock288 More on Order |
|
Series: MDmesh™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 43.6nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 150W (Tc) |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1.2KV 3A TO-220AB |
In Stock424 More on Order |
|
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 200W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 80A TO220AB |
In Stock376 More on Order |
|
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 390W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB (IXFP) |
Package / Case: TO-220-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 2000V 1A TO-263HV |
In Stock282 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 2000V |
Current - Continuous Drain (Id) @ 25°C: 1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-263 (IXTA) |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 11A TO-247 |
In Stock458 More on Order |
|
Series: MDmesh™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 43.6nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 150W (Tc) |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 48A TO220 |
In Stock417 More on Order |
|
Series: CoolMOS™ P7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 48A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V |
Vgs(th) (Max) @ Id: 4V @ 800µA |
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2895pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 29W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220 Full Pack |
Package / Case: TO-220-3 Full Pack |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single 300V/72A ULTRA JUNCTION X3-CLASS |
In Stock224 More on Order |
|
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 72A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5.4nF @ 25V |
FET Feature: - |
Power Dissipation (Max): 390W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-263AA |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single N-CHANNEL 900 V, 0.24 OHM TYP., |
In Stock341 More on Order |
|
Series: MDmesh™ K5 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 250W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 |
Package / Case: TO-220-3 |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N CH 100V 180A TO-220 |
In Stock476 More on Order |
|
Series: DeepGATE™, STripFET™ VII |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: 3.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 315W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 |
Package / Case: TO-220-3 |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 52A TO247 |
In Stock143 More on Order |
|
Series: MDmesh™ M2 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 52A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 350W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N CH 80V 180A TO220 |
In Stock267 More on Order |
|
Series: DeepGATE™, STripFET™ VII |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 315W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 |
Package / Case: TO-220-3 |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 10A TO-247 |
In Stock252 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 18V |
Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V |
Vgs(th) (Max) @ Id: 4V @ 900µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 18V |
Vgs (Max): +22V, -6V |
Input Capacitance (Ciss) (Max) @ Vds: 463pF @ 800V |
FET Feature: - |
Power Dissipation (Max): 85W (Tc) |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 96A TO247AC |
In Stock250 More on Order |
|
Series: StrongIRFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 96A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 58A, 10V |
Vgs(th) (Max) @ Id: 4V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs: 203nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 9915pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 313W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AC |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single HIGH POWER_NEW |
In Stock195 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 38A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 900µA |
Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3194pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 178W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3 |
Package / Case: TO-247-3 |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 34A TO-3PF |
In Stock387 More on Order |
|
Series: MDmesh™ II Plus |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 63W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ISOWATT-218FX |
Package / Case: ISOWATT218FX |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 29A TO-247 |
In Stock491 More on Order |
|
Series: FDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 80.4nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 190W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 45.8A TO-247 |
In Stock189 More on Order |
|
Series: SupreMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 45.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 157nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 368W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
|
|
|
Microchip Technology |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.41A TO39-3 |
In Stock362 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 24V |
FET Feature: - |
Power Dissipation (Max): 6.25W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-39 |
Package / Case: TO-205AD, TO-39-3 Metal Can |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single HIGH POWER_NEW |
In Stock400 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA |
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4354pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 227W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3 |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 50A TO220-3 |
In Stock330 More on Order |
|
Series: CoolMOS™ C7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1.24mA |
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 227W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3-1 |
Package / Case: TO-220-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 120A TO-264 |
In Stock409 More on Order |
|
Series: PolarHT™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: 5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 700W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264 (IXTK) |
Package / Case: TO-264-3, TO-264AA |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 2500V 0.2A TO247 |
In Stock393 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 2500V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 116pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 83W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 950V 38A TO247 |
In Stock108 More on Order |
|
Series: MDmesh™ DK5 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 950V |
Current - Continuous Drain (Id) @ 25°C: 38A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 130mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 450W (Tc) |
Operating Temperature: -55°C ~ 150°C |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 170A TO247 |
In Stock426 More on Order |
|
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 170A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 960W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXFH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single 300V/150A ULTRA JUNCTION X3-CLAS |
In Stock276 More on Order |
|
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 150A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 254nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 13.1nF @ 25V |
FET Feature: - |
Power Dissipation (Max): 890W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 90A PLUS247 |
In Stock222 More on Order |
|
Series: PolarP™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 44mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 890W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PLUS247™-3 |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 64A TO-264 |
In Stock493 More on Order |
|
Series: HiPerFET™, PolarHT™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 64A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1040W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264AA (IXFK) |
Package / Case: TO-264-3, TO-264AA |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 180A TO-264AA |
In Stock361 More on Order |
|
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id: 4V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 560W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264AA (IXFK) |
Package / Case: TO-264-3, TO-264AA |