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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 367/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SCT30N120
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1200V 45A HIP247
In Stock413

More on Order
Series: -
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 2.6V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 20V
Vgs (Max): +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 400V
FET Feature: -
Power Dissipation (Max): 270W (Tc)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: HiP247™
Package / Case: TO-247-3
APT51F50J
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 51A SOT-227
In Stock234

More on Order
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 11600pF @ 25V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
APT39F60J
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 42A SOT-227
In Stock342

More on Order
Series: POWER MOS 8™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 110mOhm @ 28A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
APT10M11JVRU3
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 142A SOT227
In Stock262

More on Order
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 71A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
FET Feature: -
Power Dissipation (Max): 450W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
APT25M100J
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1000V 25A SOT-227
In Stock229

More on Order
Series: POWER MOS 8™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V
FET Feature: -
Power Dissipation (Max): 545W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
APT17F120J
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1200V 18A SOT-227
In Stock104

More on Order
Series: POWER MOS 8™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 580mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V
FET Feature: -
Power Dissipation (Max): 545W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
APT40N60JCU2
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 40A SOT-227
In Stock322

More on Order
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7015pF @ 25V
FET Feature: -
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
APT58M80J
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 58A SOT-227
In Stock354

More on Order
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 60A
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 17550pF @ 25V
FET Feature: -
Power Dissipation (Max): 960W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
APT34M120J
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1200V 34A SOT-227
In Stock212

More on Order
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 18200pF @ 25V
FET Feature: -
Power Dissipation (Max): 960W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
APT10021JLL
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1000V 37A SOT-227
In Stock493

More on Order
Series: POWER MOS 7®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 395nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V
FET Feature: -
Power Dissipation (Max): 694W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
RU1L002SNTL
Rohm Semiconductor

Transistors - FETs, MOSFETs - Single

N-CHANNEL MOSFET, 2.5V. MOSFETS
In Stock179

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
SSM3J15F,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

SMALL SIGNAL MOSFET P-CH VDSS=-3
In Stock476

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
SSM3K35CT,L3F
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

SMALL SIGNAL MOSFET N-CH VDSS=20
In Stock408

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
SSM3J15FS,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

SMALL SIGNAL MOSFET P-CH VDSS=-3
In Stock405

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
SSM3J66MFV,L3F
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

SMALL SIGNAL MOSFET P-CH VDSS-20
In Stock409

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
SSM3K48FU,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

SMALL SIGNAL MOSFET N-CH VDSS30V
In Stock463

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
SI3434-TP
Micro Commercial Co

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 30V 5A SOT23
In Stock413

More on Order
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
SSM6J412TU,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

SMALL SIGNAL MOSFET P-CH VDSS=-2
In Stock134

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
SSM6J422TU,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

SMALL SIGNAL MOSFET P-CH VDSS-20
In Stock142

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
SSM6K405TU,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

SMALL SIGNAL MOSFET N-CH VDSS20V
In Stock146

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
SSM3J135TU,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

SMALL SIGNAL MOSFET P-CH VDSS-20
In Stock207

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
SSM3K127TU,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

SMALL SIGNAL MOSFET N-CH VDSS30V
In Stock114

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
SSM5H90ATU,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

SMALL SIGNAL MOSFET N-CH VDSS60V
In Stock107

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
SSM3K122TU,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

SMALL SIGNAL MOSFET N-CH VDSS20V
In Stock277

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
SSM3J118TU(TE85L)
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 1.4A UFM
In Stock373

More on Order
Series: U-MOSII
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: UFM
Package / Case: 3-SMD, Flat Leads
RHK005N03FRAT146
Rohm Semiconductor

Transistors - FETs, MOSFETs - Single

4V DRIVE NCH MOSFET (AEC-Q101 QU
In Stock150

More on Order
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SMT3
Package / Case: TO-236-3, SC-59, SOT-23-3
SI8819EDB-T2-E1
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 12V 2.9A 4-MICROFOOT
In Stock391

More on Order
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 6V
FET Feature: -
Power Dissipation (Max): 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Package / Case: 4-XFBGA
SSM5H08TU,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

SMALL SIGNAL MOSFET N-CH+SBD VDS
In Stock314

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Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
SSM6J424TU,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

SMALL SIGNAL MOSFET P-CH VDSS-20
In Stock268

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Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
SSM6K404TU,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

SMALL SIGNAL MOSFET N-CH VDSS20V
In Stock215

More on Order
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -