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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 442/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 7A TO220 |
In Stock229 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 18mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 100W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 |
Package / Case: TO-220-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 8SOIC |
In Stock283 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.7W (Ta), 107W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 5-DFN (5x6) (8-SOFL) |
Package / Case: 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 20A PPAK SO-8 |
In Stock300 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 4.2W (Ta), 35.7W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 7.2A 8DSO |
In Stock123 More on Order |
|
Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V |
Vgs(th) (Max) @ Id: 2V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.56W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-DSO-8 |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 17A 5DFN |
In Stock449 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 17A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: 2V @ 53µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 61W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 5-DFN (5x6) (8-SOFL) |
Package / Case: 8-PowerTDFN, 5 Leads |
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Sanken |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 39A TO-220F |
In Stock369 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 39A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 28.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 650µA |
Gate Charge (Qg) (Max) @ Vgs: 38.6nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 38W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220F |
Package / Case: TO-220-3 Full Pack |
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Sanken |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 31A TO-220F |
In Stock150 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 22.8A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 650µA |
Gate Charge (Qg) (Max) @ Vgs: 36.2nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 38W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220F |
Package / Case: TO-220-3 Full Pack |
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Sanken |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 23A TO-220F |
In Stock485 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 17.1A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 650µA |
Gate Charge (Qg) (Max) @ Vgs: 35.8nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2540pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 38W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220F |
Package / Case: TO-220-3 Full Pack |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single T6 40V DPAK EXPANSION AND |
In Stock173 More on Order |
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Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 73A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 60µA |
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3W (Ta), 47W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 4.1A TO-220FP |
In Stock325 More on Order |
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Series: CoolMOS™ CE |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 13V |
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V |
Vgs(th) (Max) @ Id: 3.5V @ 130µA |
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 26.4W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 Full Pack |
Package / Case: TO-220-3 Full Pack |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 34A D2PAK |
In Stock153 More on Order |
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Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 29.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1738pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 96W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 31A D2PAK |
In Stock293 More on Order |
|
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 2681pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 96W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 60A DPAK-3 |
In Stock289 More on Order |
|
Series: U-MOSVI-H |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 63W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 20A 8SON |
In Stock451 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 36W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TSDSON-8-FL |
Package / Case: 8-PowerTDFN |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 5A CPT3 |
In Stock461 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 618mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: 5.25V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 20W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: CPT3 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 17A 71A 5DFN |
In Stock140 More on Order |
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Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: 2V @ 53µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 61W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 5-DFN (5x6) (8-SOFL) |
Package / Case: 8-PowerTDFN, 5 Leads |
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Renesas Electronics America |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8HVSON |
In Stock370 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta), 16W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: - |
Package / Case: 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 3.3A TO251 |
In Stock145 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 38W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251 (IPAK) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 8WDFN |
In Stock223 More on Order |
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Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 8WDFN |
In Stock451 More on Order |
|
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 8WDFN |
In Stock238 More on Order |
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Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 8WDFN |
In Stock154 More on Order |
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Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 9.4A DPAK |
In Stock314 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 86W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 35A DPAK |
In Stock342 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: 4V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 91W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 43A TO252-3 |
In Stock309 More on Order |
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Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 43A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 33µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 71W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO252-3 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 50A TO252-3 |
In Stock446 More on Order |
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Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 28µA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 63W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO252-3 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 14.9A TDSON-8 |
In Stock180 More on Order |
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Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 3V @ 110µA |
Gate Charge (Qg) (Max) @ Vgs: 57.7nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 4240pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 69W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TDSON-8-5 |
Package / Case: 8-PowerTDFN |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 61V-100V SO-8 T&R |
In Stock357 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2309pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 61V-100V SO-8 T&R |
In Stock229 More on Order |
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Series: - |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 7A 8DSO |
In Stock298 More on Order |
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Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.6W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: P-DSO-8 |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |