Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 542/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 130A TO-3P |
In Stock268 More on Order |
|
Series: TrenchHV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 130A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 750W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-3P |
Package / Case: TO-3P-3, SC-65-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 72A TO-3P |
In Stock274 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 72A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Through Hole |
Supplier Device Package: TO-3P |
Package / Case: TO-3P-3, SC-65-3 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 7A TO-247 |
In Stock291 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2Ohm @ 4A, 10V |
Vgs(th) (Max) @ Id: 5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 290W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 [B] |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 102A TO-247 |
In Stock431 More on Order |
|
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 102A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 455W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AD (IXFH) |
Package / Case: TO-247-3 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 54A TO247 |
In Stock151 More on Order |
|
Series: FRFET®, SuperFET® II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 54A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5.4mA |
Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7109pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 481W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 Long Leads |
Package / Case: TO-247-3 |
|
|
|
Sanken |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 330V 30A TO-3PF |
In Stock152 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 330V |
Current - Continuous Drain (Id) @ 25°C: 30A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 63mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 85W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-3P |
Package / Case: TO-3P-3 Full Pack |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO-247 |
In Stock259 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA |
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 208W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3 |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO247-4 |
In Stock175 More on Order |
|
Series: CoolMOS™ P6 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA |
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 278W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-4 |
Package / Case: TO-247-4 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 110A TO-247 |
In Stock443 More on Order |
|
Series: PolarHT™ HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 480W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AD (IXFH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 52A TO-247 |
In Stock210 More on Order |
|
Series: PolarHT™ HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 52A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 400W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AD (IXFH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 96A TO-247 |
In Stock469 More on Order |
|
Series: PolarHT™ HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 96A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 480W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AD (IXFH) |
Package / Case: TO-247-3 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO-247 |
In Stock290 More on Order |
|
Series: DTMOSIV |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 3.7V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 300V |
FET Feature: - |
Power Dissipation (Max): 165W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V TO220-3 |
In Stock476 More on Order |
|
Series: CoolMOS™ C7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V |
Vgs(th) (Max) @ Id: 4V @ 850µA |
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 34W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-FP |
Package / Case: TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V TO-220-3 |
In Stock184 More on Order |
|
Series: CoolMOS™ C7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V |
Vgs(th) (Max) @ Id: 4V @ 850µA |
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 171W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single SUPERFET3 650V FRFET82MO |
In Stock217 More on Order |
|
Series: Automotive, AEC-Q101, SuperFET® III, FRFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3410pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 313W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 15A ISOPLUS220 |
In Stock464 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 900µA |
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V |
FET Feature: Super Junction |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUS220™ |
Package / Case: ISOPLUS220™ |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 300A TO-247 |
In Stock491 More on Order |
|
Series: TrenchT2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 300A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 480W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 102A TO-247 |
In Stock240 More on Order |
|
Series: TrenchHV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 102A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 23mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 750W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 102A TO-247 |
In Stock455 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 102A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 130A TO-247 |
In Stock185 More on Order |
|
Series: TrenchHV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 130A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 750W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 72A TO-247 |
In Stock374 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 72A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 14A TO-247 |
In Stock480 More on Order |
|
Series: HiPerFET™, PolarHT™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 400W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AD (IXFH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 140A TO-263 |
In Stock314 More on Order |
|
Series: TrenchP™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 140A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 298W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-263 (IXTA) |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 16A TO-263AA |
In Stock467 More on Order |
|
Series: HiPerFET™, Polar3™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 440mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 347W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-263 (IXFA) |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 150V 44A TO-247 |
In Stock163 More on Order |
|
Series: TrenchP™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 298W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1KV 10A TO-247AD |
In Stock159 More on Order |
|
Series: HiPerFET™, PolarP2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V |
Vgs(th) (Max) @ Id: 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 380W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AD (IXFH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 65V 120A TO-247 |
In Stock107 More on Order |
|
Series: TrenchP™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 65V |
Current - Continuous Drain (Id) @ 25°C: 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 298W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 260A TO-247 |
In Stock211 More on Order |
|
Series: TrenchT2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 260A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 480W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 20A TO-247AD |
In Stock405 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 2942pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 250mW (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: SUPER-247™ (TO-274AA) |
Package / Case: TO-274AA |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 22A TO-247 |
In Stock301 More on Order |
|
Series: HiPerFET™, PolarHT™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 400W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AD (IXFH) |
Package / Case: TO-247-3 |