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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 55/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
AO3402
Alpha & Omega Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 4.0A SOT23

In Stock4,014

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.34nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 15V
FET Feature: -
Power Dissipation (Max): 1.4W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3L
Package / Case: TO-236-3, SC-59, SOT-23-3
NTR1P02LT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 1.3A SOT-23

In Stock118,505

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 5V
FET Feature: -
Power Dissipation (Max): 400mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
BSS205NH6327XTSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 2.5A SOT23

In Stock15,776

More on Order

Series: OptiMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
RJU002N06T106
Rohm Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 200MA SOT-323

In Stock24,868

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: UMT3
Package / Case: SC-70, SOT-323
DMG3418L-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 4A SOT23

In Stock13,449

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 464.3pF @ 15V
FET Feature: -
Power Dissipation (Max): 1.4W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
RQ5E035ATTCL
Rohm Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 3.5A TSMT

In Stock8,071

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT3
Package / Case: SC-96
2N7000-D74Z
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 200MA TO-92

In Stock3,719

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
FET Feature: -
Power Dissipation (Max): 400mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
DMN31D5UFZ-7B
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V .22A X2-DFN0606-

In Stock35,786

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 22.2pF @ 15V
FET Feature: -
Power Dissipation (Max): 393mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: X2-DFN0606-3
Package / Case: 3-XFDFN
DMN2990UFZ-7B
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V .25A X2-DFN0606

In Stock116,297

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 55.2pF @ 16V
FET Feature: -
Power Dissipation (Max): 320mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: X2-DFN0606-3
Package / Case: 3-XFDFN
DMP21D0UT-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 0.59A SOT523

In Stock16,245

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 495mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.54nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
FET Feature: -
Power Dissipation (Max): 240mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-523
Package / Case: SOT-523
PMV65XPEAR
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V SOT23

In Stock39,289

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 618pF @ 10V
FET Feature: -
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
DMG3402L-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 4A SOT23

In Stock116,268

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 464pF @ 15V
FET Feature: -
Power Dissipation (Max): 1.4W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
IRLML6246TRPBF
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 4.1A SOT-23

In Stock98,915

More on Order

Series: HEXFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 5µA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 16V
FET Feature: -
Power Dissipation (Max): 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Micro3™/SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
BSS315PH6327XTSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 1.5A SOT23

In Stock7,762

More on Order

Series: OptiMOS™
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
DMN60H080DS-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 80MA SOT23

In Stock16,858

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 80mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V
FET Feature: -
Power Dissipation (Max): 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
NTR5198NLT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 1.7A SOT23

In Stock169,536

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 182pF @ 25V
FET Feature: -
Power Dissipation (Max): 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
SSM3J355R,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

SMALL LOW ON RESISTANCE MOSFET

In Stock15,342

More on Order

Series: U-MOSVII
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads
AO3413
Alpha & Omega Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 3A SOT23

In Stock4,653

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 97mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
FET Feature: -
Power Dissipation (Max): 1.4W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3L
Package / Case: TO-236-3, SC-59, SOT-23-3
SSM3K09FU,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

X34 PB USM S-MOS (LF) TRANSISTOR

In Stock4,517

More on Order

Series: π-MOSVI
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: USM
Package / Case: SC-70, SOT-323
2N7002T
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 115MA SOT-523F

In Stock18,530

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-523F
Package / Case: SC-89, SOT-490
BS170-D27Z
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 500MA TO-92

In Stock3,945

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
FET Feature: -
Power Dissipation (Max): 830mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
BSH205G2R
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 2A SOT23

In Stock38,471

More on Order

Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 418pF @ 10V
FET Feature: -
Power Dissipation (Max): 480mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
DMN5L06WK-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 50V 300MA SC70-3

In Stock214,502

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
FET Feature: -
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
BSS127S-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 0.05A SOT23

In Stock58,166

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.08nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 25V
FET Feature: -
Power Dissipation (Max): 610mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
DMP1045U-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 12V 4A SOT23

In Stock45,457

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Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1357pF @ 10V
FET Feature: -
Power Dissipation (Max): 800mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
SI2347DS-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 5A SOT-23

In Stock43,390

More on Order

Series: TrenchFET®
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 15V
FET Feature: -
Power Dissipation (Max): 1.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
DMN3150L-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 28V 3.2A SOT23-3

In Stock29,582

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 28V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 5V
FET Feature: -
Power Dissipation (Max): 1.4W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
DMP31D0U-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 530MA SOT23

In Stock13,814

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Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 15V
FET Feature: -
Power Dissipation (Max): 450mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
DMG2301LK-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CHA 20V 2.4A SOT23

In Stock9,863

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Series: Automotive, AEC-Q101
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 6V
FET Feature: -
Power Dissipation (Max): 840mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
SI3443DDV-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CHAN 20V TSOP6S

In Stock9,660

More on Order

Series: TrenchFET®
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 10V
FET Feature: -
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6