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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 585/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A DPAK |
In Stock499 More on Order |
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Series: STripFET™ V |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V |
Vgs (Max): ±22V |
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 70W (Tc) |
Operating Temperature: 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK |
In Stock499 More on Order |
|
Series: STripFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 300W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 19A D2PAK |
In Stock484 More on Order |
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Series: MDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 150W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 33V 80A D2PAK |
In Stock129 More on Order |
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Series: SAFeFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 33V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V |
Vgs (Max): ±18V |
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 215W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 120A D2PAK |
In Stock251 More on Order |
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Series: STripFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 24V |
Current - Continuous Drain (Id) @ 25°C: 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 109.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7055pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 300W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 40A D2PAK |
In Stock203 More on Order |
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Series: MESH OVERLAY™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 300W (Tc) |
Operating Temperature: -65°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 5.75A POWERFLAT |
In Stock130 More on Order |
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Series: MDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 5.75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 70W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerFLAT™ (5x5) |
Package / Case: 8-PowerVDFN |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 45A D2PAK |
In Stock382 More on Order |
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Series: STripFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 68.2nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 160W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 4A 8-SOIC |
In Stock194 More on Order |
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Series: STripFET™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2.4A SOT23-6 |
In Stock333 More on Order |
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Series: STripFET™ II |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 165mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.6W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-6 |
Package / Case: SOT-23-6 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 30A DPAK |
In Stock290 More on Order |
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Series: STripFET™ III |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 24V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 45W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 60A DPAK |
In Stock207 More on Order |
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Series: STripFET™ III |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 16V |
FET Feature: - |
Power Dissipation (Max): 70W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A TO-220 |
In Stock375 More on Order |
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Series: FDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 160W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO-220 |
In Stock102 More on Order |
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Series: MDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 190W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO-220 |
In Stock199 More on Order |
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Series: FDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 190W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 19.5A TO-247 |
In Stock405 More on Order |
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Series: FDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 150W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A TO-247 |
In Stock186 More on Order |
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Series: FDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 160W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO-247 |
In Stock408 More on Order |
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Series: FDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 190W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 37A TO-247 |
In Stock378 More on Order |
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Series: MDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 85mOhm @ 18.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 255W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 35A TO-247 |
In Stock317 More on Order |
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Series: MDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 88mOhm @ 17.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 255W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 54A TO-247 |
In Stock290 More on Order |
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Series: MDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 54A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 54mOhm @ 27A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 350W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 83A TO-247 |
In Stock133 More on Order |
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Series: STripFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 83A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 23mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5736pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 300W (Tc) |
Operating Temperature: -50°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 14A D2PAK |
In Stock167 More on Order |
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Series: FDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 125W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 19.5A D2PAK |
In Stock301 More on Order |
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Series: FDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 150W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A D2PAK |
In Stock157 More on Order |
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Series: FDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 160W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A D2PAK |
In Stock271 More on Order |
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Series: MDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 190W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A D2PAK |
In Stock392 More on Order |
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Series: FDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 190W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 80A DPAK |
In Stock314 More on Order |
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Series: STripFET™ III |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 110W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 80A POWERFLAT6X5 |
In Stock484 More on Order |
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Series: STripFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 80W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerFlat™ (5x6) |
Package / Case: 8-PowerVDFN |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A D2PAK |
In Stock405 More on Order |
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Series: MDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 100W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |