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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 588/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
STW70N10F4
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 65A TO-247

In Stock168

More on Order

Series: DeepGATE™, STripFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
STB21NK50Z
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 17A D2PAK

In Stock208

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Series: Automotive, AEC-Q101, SuperMESH™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STB30NM50N
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 27A D2PAK

In Stock430

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Series: MDmesh™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 115mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 50V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STB6NM60N
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 4.6A D2PAK

In Stock258

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Series: MDmesh™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STB8NM60N
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 7A D2PAK

In Stock256

More on Order

Series: MDmesh™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STD8NM60ND
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 7A DPAK

In Stock115

More on Order

Series: FDmesh™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 700mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STD95N3LLH6
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 80A DPAK

In Stock344

More on Order

Series: DeepGATE™, STripFET™ VI
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STK20N75F3
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 20A POLARPAK

In Stock226

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Series: STripFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V
FET Feature: -
Power Dissipation (Max): 5.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PolarPak®
Package / Case: PolarPak®
STK28N3LLH5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 28A POLARPAK

In Stock157

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Series: STripFET™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Vgs (Max): ±22V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
FET Feature: -
Power Dissipation (Max): 5.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PolarPak®
Package / Case: PolarPak®
STD6NM60N-1
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 4.6A IPAK

In Stock448

More on Order

Series: MDmesh™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
STF30NM50N
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 27A TO-220FP

In Stock186

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Series: MDmesh™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 115mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 50V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack
STF40NF03L
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 23A TO-220FP

In Stock397

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Series: STripFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack
STF5NK52ZD
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 520V 4.4A TO-220FP

In Stock220

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Series: SuperMESH™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 520V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 16.9nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 25V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack
STU8NM60ND
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 7A IPAK

In Stock189

More on Order

Series: FDmesh™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 700mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
STP27N3LH5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 27A TO220

In Stock203

More on Order

Series: STripFET™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V
Vgs (Max): ±22V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STP200N6F3
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 120A TO220

In Stock163

More on Order

Series: STripFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STP95N2LH5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 80A TO-220

In Stock214

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Series: STripFET™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 5V
Vgs (Max): ±22V
Input Capacitance (Ciss) (Max) @ Vds: 1817pF @ 25V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STS30N3LLH6
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 30A 8-SOIC

In Stock276

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Series: DeepGATE™, STripFET™ VI
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 25V
FET Feature: -
Power Dissipation (Max): 2.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
STB95N3LLH6
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 80A D2PAK

In Stock233

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Series: DeepGATE™, STripFET™ VI
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STB50N25M5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 28A D2PAK

In Stock115

More on Order

Series: MDmesh™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 50V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STD40N2LH5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 40A DPAK

In Stock260

More on Order

Series: STripFET™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
Vgs (Max): ±22V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STP35N65M5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 27A TO-220

In Stock179

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Series: MDmesh™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 100V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STW27NM60ND
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 21A TO-247

In Stock458

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Series: Automotive, AEC-Q101, FDmesh™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
STD3NK60ZD
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 2.4A DPAK

In Stock464

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Series: SuperFREDmesh™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 25V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STD70N2LH5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 48A DPAK

In Stock410

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Series: STripFET™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 24A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Vgs (Max): ±22V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STL25N15F4
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 25A POWERFLAT

In Stock415

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Series: DeepGATE™, STripFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 63mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2710pF @ 25V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFlat™ (5x6)
Package / Case: 8-PowerVDFN
STP95N3LLH6
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 80A TO-220

In Stock498

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Series: DeepGATE™, STripFET™ VI
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STB18NM60N
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 13A D2PAK

In Stock189

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Series: MDmesh™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STK30N2LLH5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 30A POLARPAK

In Stock164

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Series: STripFET™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V
FET Feature: -
Power Dissipation (Max): 5.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PolarPak®
Package / Case: PolarPak®
STB70N10F4
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 65A D2PAK

In Stock375

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Series: DeepGATE™, STripFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB