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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 590/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
STP7N52DK3
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 525V 6A TO-220

In Stock364

More on Order

Series: SuperFREDmesh3™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 525V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V
FET Feature: -
Power Dissipation (Max): 90W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STP80N20M5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 61A TO-220

In Stock213

More on Order

Series: MDmesh™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4329pF @ 50V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STW17N62K3
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 620V 15A TO-247

In Stock200

More on Order

Series: SuperMESH3™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 620V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
STD55N4F5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 55A DPAK

In Stock215

More on Order

Series: STripFET™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STP10NM50N
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 7A TO220

In Stock246

More on Order

Series: MDmesh™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 50V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
STL52N25M5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 28A POWERFLAT

In Stock271

More on Order

Series: MDmesh™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 50V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFlat™ (5x6)
Package / Case: 8-PowerVDFN
STP8N65M5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 7A TO-220

In Stock206

More on Order

Series: MDmesh™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 100V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
STL17N3LLH6
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 17A POWERFLAT

In Stock375

More on Order

Series: DeepGATE™, STripFET™ VI
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFlat™ (3.3x3.3)
Package / Case: 8-PowerVDFN
STL85N6F3
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 85A POWERFLAT5X6

In Stock128

More on Order

Series: STripFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFlat™ (5x6)
Package / Case: 8-PowerVDFN
STW16N65M5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 12A TO-247

In Stock212

More on Order

Series: MDmesh™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 279mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 100V
FET Feature: -
Power Dissipation (Max): 90W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
STB5N62K3
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 620V 4.2A D2PAK

In Stock365

More on Order

Series: SuperMESH3™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 620V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STD10NM50N
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 7A DPAK

In Stock188

More on Order

Series: MDmesh™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 50V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STD35N3LH5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 35A DPAK

In Stock128

More on Order

Series: STripFET™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STL7NM60N
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 5.8A POWERFLAT

In Stock466

More on Order

Series: MDmesh™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 50V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 14-PowerFLAT™ (5x5)
Package / Case: 14-PowerVQFN
STF11N65K3
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 11.0A TO220FP

In Stock200

More on Order

Series: SuperMESH3™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 50V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack
STB5N52K3
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 525V 4.4A D2PAK

In Stock476

More on Order

Series: SuperMESH3™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 525V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STL60N3LLH5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 17A POWERFLAT

In Stock498

More on Order

Series: STripFET™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs (Max): ±22V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 25V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFlat™ (5x6)
Package / Case: 8-PowerVDFN
STL80N3LLH6
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 21A POWERFLAT

In Stock197

More on Order

Series: DeepGATE™, STripFET™ VI
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFlat™ (5x6)
Package / Case: 8-PowerVDFN
STW25N95K3
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 950V 22A TO247

In Stock478

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Series: SuperMESH3™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 950V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 100V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3
STL23NM60ND
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 19.5A POWERFLAT

In Stock255

More on Order

Series: FDmesh™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFlat™ (8x8) HV
Package / Case: 8-PowerVDFN
STB6N52K3
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 525V 5A D2PAK

In Stock339

More on Order

Series: SuperMESH3™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 525V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 50V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STL100N1VH5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 12V 100A POWERFLAT56

In Stock277

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Series: STripFET™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 2085pF @ 10V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFlat™ (5x6)
Package / Case: 8-PowerVDFN
STL75N3LLZH5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 75A POWERFLAT56

In Stock109

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Series: STripFET™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 4.5V
Vgs (Max): ±18V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFlat™ (5x6)
Package / Case: 8-PowerVDFN
STL75N8LF6
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 75A POWERFLAT56

In Stock350

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Series: DeepGATE™, STripFET™ VI
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 4.5V
Vgs (Max): +21V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 6895pF @ 25V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFlat™ (5x6)
Package / Case: 8-PowerVDFN
STH210N75F6-2
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 180A H2PAK-2

In Stock126

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Series: DeepGATE™, STripFET™ VI
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 171nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 25V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: H2Pak-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STB155N3H6
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 80A D2PAK

In Stock264

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Series: DeepGATE™, STripFET™ VI
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STI12N65M5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 8.5A I2PAK

In Stock129

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Series: MDmesh™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 100V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
STI35N65M5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 27A I2PAK

In Stock278

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Series: MDmesh™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 100V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
STI8N65M5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 7A I2PAK

In Stock255

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Series: MDmesh™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 100V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
STP7NM60N
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 5A TO-220AB

In Stock476

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Series: MDmesh™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 50V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3