Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 60/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 4A CPH3 |
In Stock14,030 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 3-CPH |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 500MA SOT23 |
In Stock23,406 More on Order |
|
Series: TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 360mW (Ta), 830mW (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 0.35A CPH3 |
In Stock8,130 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 170mA, 4.5V |
Vgs(th) (Max) @ Id: 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 3-CPH |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 1.1A TO236AB |
In Stock4,101 More on Order |
|
Series: TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.1A, 10V |
Vgs(th) (Max) @ Id: 2.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 580mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V MICRO FOOT |
In Stock18,539 More on Order |
|
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 135mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 500mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 4-Microfoot |
Package / Case: 4-XFBGA, CSPBGA |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.2A 6-TSOP |
In Stock46,918 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 5V |
FET Feature: - |
Power Dissipation (Max): 500mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-TSOP |
Package / Case: SOT-23-6 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 6A CPH6 |
In Stock51,284 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.6W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-CPH |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1.9A SOT23-3 |
In Stock183,899 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 303pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 625mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 28V 1.6A SC70-3 |
In Stock56,677 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 28V |
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 88mOhm @ 1.6A, 4.5V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 5V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-323 |
Package / Case: SC-70, SOT-323 |
|
|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 8.6A 6-TSOP |
In Stock31,883 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V |
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-TSOP |
Package / Case: SC-74, SOT-457 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3A SOT23-3 |
In Stock8,306 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 16V |
FET Feature: - |
Power Dissipation (Max): 1.4W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Micro Commercial Co |
Transistors - FETs, MOSFETs - Single P-CHANNEL MOSFET, SOP-8 PACKAGE |
In Stock5,278 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9.1A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.1A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.4W (Tj) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOP |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3A SOT23 |
In Stock4,731 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 16V |
FET Feature: - |
Power Dissipation (Max): 1.4W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 30V 3A SOT23 |
In Stock27,626 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 551.57pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 3A SOT23 |
In Stock7,441 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 156mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 511pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 10A UDFN6B |
In Stock4,624 More on Order |
|
Series: U-MOSVI |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 29.9nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-UDFNB (2x2) |
Package / Case: 6-WDFN Exposed Pad |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 3.6A SOT-23-3 |
In Stock451 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.6A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 266pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Micro3™/SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 14A UDFN6B |
In Stock17,193 More on Order |
|
Series: U-MOSVII |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 14A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 6V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-UDFNB (2x2) |
Package / Case: 6-WDFN Exposed Pad |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 3.5A 6-TSOP |
In Stock23,702 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 24V |
FET Feature: - |
Power Dissipation (Max): 500mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-TSOP |
Package / Case: SOT-23-6 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2A SOT23-3 |
In Stock8,439 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 600mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Central Semiconductor Corp |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.28A SOT-23 |
In Stock14,319 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): 40V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta) |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 300MA 3-DFN |
In Stock105,268 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V |
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: X2-DFN1006-3 |
Package / Case: 3-XFDFN |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 4A SC-70-6 |
In Stock91,398 More on Order |
|
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-70-6 (SOT-363) |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 115MA SOT23 |
In Stock22,976 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 200mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.8A SOT-23 |
In Stock3,809 More on Order |
|
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 (TO-236) |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P CH 30V 4.5A TSOT26 |
In Stock33,184 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSOT-26 |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Micro Commercial Co |
Transistors - FETs, MOSFETs - Single N-CHANNEL,MOSFETS,SOT-23 PACKAGE |
In Stock4,868 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3A |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 237pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.25W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 8A TSOP-6 |
In Stock24,555 More on Order |
|
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta), 4.2W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-TSOP |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 5.8A 8-SO |
In Stock3,564 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 19.3nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 931pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 1.9A SOT1220 |
In Stock19,810 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V |
Vgs(th) (Max) @ Id: 2.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN2020MD-6 |
Package / Case: 6-UDFN Exposed Pad |