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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 639/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 61A I-PAK |
In Stock380 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 61A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V |
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 87W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK (TO-251) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 55A D2PAK |
In Stock145 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 31A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1812pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 115W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 75A DPAK |
In Stock391 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V |
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 88W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 31A TO-247AC |
In Stock152 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 180mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 460W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 7A 8-TSSOP |
In Stock384 More on Order |
|
Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2211pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.51W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-TSSOP |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 47A SUPER247 |
In Stock167 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 47A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 90mOhm @ 28A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 8310pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 540W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: SUPER-247™ (TO-274AA) |
Package / Case: TO-274AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 6.2A 8-SOIC |
In Stock335 More on Order |
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Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 41mOhm @ 6.2A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 46A SUPER247 |
In Stock166 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 46A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 540W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: SUPER-247™ (TO-274AA) |
Package / Case: TO-274AA |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 32A TO-247AC |
In Stock403 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 160mOhm @ 32A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 5280pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 460W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 61A I-PAK |
In Stock378 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 61A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 87W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK (TO-251) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 210A TO-247AC |
In Stock381 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 210A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V |
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 76A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 209nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 8250pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.8W (Ta), 230W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AC |
Package / Case: TO-247-3 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 23A TO-247AC |
In Stock376 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 235mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 370W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 20A TO-247AC |
In Stock327 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 75A I-PAK |
In Stock209 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V |
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 88W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK (TO-251) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 9A 8-SOIC |
In Stock383 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 62A TO-262 |
In Stock338 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 62A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 87W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-262 |
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 10A I-PAK |
In Stock322 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 28W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 36A DPAK |
In Stock387 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 47W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A SOT223 |
In Stock150 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 75A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 140A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Through Hole |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 36A I-PAK |
In Stock209 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 47W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 54A DPAK |
In Stock319 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 54A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 3.8W (Ta), 71W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 54A I-PAK |
In Stock244 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 54A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 3.8W (Ta), 71W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4A 6-TSOP |
In Stock282 More on Order |
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Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 86mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Micro6™(TSOP-6) |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 54A TO-220AB |
In Stock248 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 54A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 3.8W (Ta), 71W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 3.4A 6-TSOP |
In Stock186 More on Order |
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Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: Micro6™(TSOP-6) |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 900MA 6TSOP |
In Stock250 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: Micro6™(TSOP-6) |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 2.5A 6-TSOP |
In Stock110 More on Order |
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Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: Micro6™(TSOP-6) |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 4A 6-TSOP |
In Stock431 More on Order |
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Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Micro6™(TSOP-6) |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 13A I-PAK |
In Stock272 More on Order |
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Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 66W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK (TO-251) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.3A 8-SOIC |
In Stock498 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V |
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |