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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 697/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.07A TO92-3 |
In Stock141 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 625mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-92-3 |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.07A TO92-3 |
In Stock145 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 625mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.07A TO92-3 |
In Stock396 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 625mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.07A TO92-3 |
In Stock317 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 625mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.035A SOT23-3 |
In Stock484 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 35mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 0.28A TO92-3 |
In Stock308 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-92-3 |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 0.28A TO92-3 |
In Stock425 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 0.28A TO92-3 |
In Stock345 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 0.45A SOT223 |
In Stock289 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.23A TO92-3 |
In Stock368 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.23A TO92-3 |
In Stock483 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.31A SOT223 |
In Stock384 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.12A TO92-3 |
In Stock388 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.12A TO92-3 |
In Stock483 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.2A SOT223 |
In Stock172 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 0.16A TO92-3 |
In Stock202 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 18V |
FET Feature: - |
Power Dissipation (Max): 625mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 0.16A TO92-3 |
In Stock376 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 18V |
FET Feature: - |
Power Dissipation (Max): 625mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 0.09A SOT23-3 |
In Stock350 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 18V |
FET Feature: - |
Power Dissipation (Max): 330mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.14A TO92-3 |
In Stock422 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 625mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.14A TO92-3 |
In Stock458 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 625mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.14A TO92-3 |
In Stock472 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 625mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.075A SOT23-3 |
In Stock459 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 75mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 330mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 0.175A TO92-3 |
In Stock330 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 175mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 625mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
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|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 0.175A TO92-3 |
In Stock489 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 175mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 625mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 240V 0.2A TO92-3 |
In Stock476 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 240V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V |
Rds On (Max) @ Id, Vgs: 9Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±40V |
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 750mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 240V 0.2A TO92-3 |
In Stock295 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 240V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V |
Rds On (Max) @ Id, Vgs: 9Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±40V |
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 750mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: E-Line (TO-92 compatible) |
Package / Case: E-Line-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 240V 0.48A SOT223 |
In Stock263 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 240V |
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V |
Rds On (Max) @ Id, Vgs: 9Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±40V |
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 0.197A SOT23-6 |
In Stock201 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 197mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V |
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 3.45nC @ 10V |
Vgs (Max): ±40V |
Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-6 |
Package / Case: SOT-23-6 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 0.265A SOT223 |
In Stock252 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V |
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 3.45nC @ 10V |
Vgs (Max): ±40V |
Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 170MA SOT23-3 |
In Stock384 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 3V, 4.5V |
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±40V |
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 360mW (Ta) |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |