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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 721/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
FQI11N40TU
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 400V 11.4A I2PAK

In Stock150

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
FQPF12N60CT
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 12A TO-220F

In Stock356

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Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V
FET Feature: -
Power Dissipation (Max): 51W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
FQAF44N08
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 35.6A TO-3PF

In Stock289

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Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PF
Package / Case: TO-3P-3 Full Pack
FQPF6N70
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 700V 3.5A TO-220F

In Stock214

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Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
FET Feature: -
Power Dissipation (Max): 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
FQB10N60CTM
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 9.5A D2PAK

In Stock319

More on Order

Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.13W (Ta), 156W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQP6N80
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 5.8A TO-220

In Stock222

More on Order

Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
FET Feature: -
Power Dissipation (Max): 158W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
HUF76633S3S
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 38A D2PAK

In Stock273

More on Order

Series: UltraFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V
FET Feature: -
Power Dissipation (Max): 145W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB13N50CTM
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 13A D2PAK

In Stock483

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Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 25V
FET Feature: -
Power Dissipation (Max): 195W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQA44N08
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 49.8A TO-3P

In Stock148

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Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 49.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 24.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
FET Feature: -
Power Dissipation (Max): 163W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3
FQP6N70
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 700V 6.2A TO-220

In Stock450

More on Order

Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
FET Feature: -
Power Dissipation (Max): 142W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
HUFA75333P3
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 66A TO-220AB

In Stock412

More on Order

Series: UltraFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 20V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
HUFA76432S3S
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 59A D2PAK

In Stock255

More on Order

Series: UltraFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 25V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQPF12N60C
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 12A TO-220F

In Stock146

More on Order

Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V
FET Feature: -
Power Dissipation (Max): 51W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
FQAF16N25
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 12.4A TO-3PF

In Stock346

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Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
FET Feature: -
Power Dissipation (Max): 85W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PF
Package / Case: TO-3P-3 Full Pack
FQAF44N10
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 33A TO-3PF

In Stock141

More on Order

Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
FET Feature: -
Power Dissipation (Max): 85W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PF
Package / Case: TO-3P-3 Full Pack
FQA44N10
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 48A TO-3P

In Stock444

More on Order

Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 24A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
FET Feature: -
Power Dissipation (Max): 180W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3
HUFA76633P3
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 38A TO-220AB

In Stock472

More on Order

Series: UltraFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V
FET Feature: -
Power Dissipation (Max): 145W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
FQB9N50TM
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 9A D2PAK

In Stock369

More on Order

Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HUF75337S3S
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 75A D2PAK

In Stock232

More on Order

Series: UltraFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 20V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1775pF @ 25V
FET Feature: -
Power Dissipation (Max): 175W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB5N80TM
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 4.8A D2PAK

In Stock131

More on Order

Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQPF6N80
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 3.3A TO-220F

In Stock438

More on Order

Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 1.65A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
FET Feature: -
Power Dissipation (Max): 51W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
FQAF14N30
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 300V 11.4A TO-3PF

In Stock284

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Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V
FET Feature: -
Power Dissipation (Max): 90W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PF
Package / Case: TO-3P-3 Full Pack
FQP7N60
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 7.4A TO-220

In Stock215

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Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
FET Feature: -
Power Dissipation (Max): 142W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
HUF76633S3ST
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 38A D2PAK

In Stock168

More on Order

Series: UltraFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V
FET Feature: -
Power Dissipation (Max): 145W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HUF75631SK8T
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 5.5A 8-SOP

In Stock411

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Series: UltraFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 79nC @ 20V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 25V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FQAF11N40
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 400V 8.8A TO-3PF

In Stock282

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Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
FET Feature: -
Power Dissipation (Max): 90W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PF
Package / Case: TO-3P-3 Full Pack
HUFA75332S3ST
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 60A D2PAK

In Stock350

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Series: UltraFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 20V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
FET Feature: -
Power Dissipation (Max): 145W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQP5N90
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 900V 5.4A TO-220

In Stock365

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Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
FET Feature: -
Power Dissipation (Max): 158W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
FQI9N50TU
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 9A I2PAK

In Stock496

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Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK (TO-262)
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
FQAF9N50
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 7.2A TO-3P

In Stock123

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Series: QFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 730mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
FET Feature: -
Power Dissipation (Max): 90W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PF
Package / Case: TO-3P-3 Full Pack