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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 736/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Renesas Electronics America |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 160V 7A TO-3P |
In Stock130 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 160V |
Current - Continuous Drain (Id) @ 25°C: 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 100W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-3P |
Package / Case: TO-3P-3, SC-65-3 |
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Renesas Electronics America |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 8A TO-3P |
In Stock452 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 100W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-3P |
Package / Case: TO-3P-3, SC-65-3 |
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Renesas Electronics America |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2A 4-UPAK |
In Stock315 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 3V, 4V |
Rds On (Max) @ Id, Vgs: 450mOhm @ 1A, 4V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 173pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: UPAK |
Package / Case: TO-243AA |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 47A TO-247 |
In Stock213 More on Order |
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Series: SuperFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 47A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 417W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2.4A IPAK |
In Stock145 More on Order |
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Series: QFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.2A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 50W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 76A DPAK |
In Stock396 More on Order |
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Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 76A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 13.8A, 10V |
Vgs(th) (Max) @ Id: 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 70W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A TDSON-8 |
In Stock409 More on Order |
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Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 2V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7490pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta), 104W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TDSON-8-1 |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A TDSON-8 |
In Stock433 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 2V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6530pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta), 89W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TDSON-8-1 |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON-8 |
In Stock182 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 2V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta), 89W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TDSON-8-1 |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A TDSON-8 |
In Stock217 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 2V @ 70µA |
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta), 78W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TDSON-8-1 |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A TDSON-8 |
In Stock213 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 2V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta), 69W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TDSON-8-1 |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A TDSON-8 |
In Stock396 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 2V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta), 54W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TDSON-8-6 |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 40A TDSON-8 |
In Stock220 More on Order |
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Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: 2V @ 30µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta), 60W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TDSON-8-1 |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 35A TDSON-8 |
In Stock278 More on Order |
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Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: 2V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta), 52W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TDSON-8-1 |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 35A TDSON-8 |
In Stock361 More on Order |
|
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: 2V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta), 52W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TDSON-8-1 |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 30A TDSON-8 |
In Stock195 More on Order |
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Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta), 43W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TDSON-8-1 |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12A 8DSO |
In Stock493 More on Order |
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Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 2V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.56W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-DSO-8 |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 10A 8DSO |
In Stock179 More on Order |
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Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: 2V @ 30µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.56W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-DSO-8 |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 10A 8DSO |
In Stock483 More on Order |
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Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: 2V @ 30µA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.56W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-DSO-8 |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 9.2A 8DSO |
In Stock366 More on Order |
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Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.3A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 140µA |
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.56W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: P-DSO-8 |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 7.4A 8DSO |
In Stock489 More on Order |
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Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.56W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-DSO-8 |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 3.44A 8DSO |
In Stock498 More on Order |
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Series: SIPMOS® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-DSO-8 |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 120MA SOT-223 |
In Stock432 More on Order |
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Series: SIPMOS® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 94µA |
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-SOT223-4 |
Package / Case: TO-261-4, TO-261AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 120MA SOT-223 |
In Stock215 More on Order |
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Series: SIPMOS® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 94µA |
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-SOT223-4 |
Package / Case: TO-261-4, TO-261AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 120MA SOT-223 |
In Stock463 More on Order |
|
Series: SIPMOS® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 94µA |
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-SOT223-4 |
Package / Case: TO-261-4, TO-261AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 240V 350MA SOT-223 |
In Stock393 More on Order |
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Series: SIPMOS® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 240V |
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V |
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V |
Vgs(th) (Max) @ Id: 1V @ 108µA |
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 108pF @ 25V |
FET Feature: Depletion Mode |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-SOT223-4 |
Package / Case: TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 240V 350MA SOT-223 |
In Stock384 More on Order |
|
Series: SIPMOS® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 240V |
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V |
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V |
Vgs(th) (Max) @ Id: 1V @ 108µA |
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 108pF @ 25V |
FET Feature: Depletion Mode |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-SOT223-4 |
Package / Case: TO-261-4, TO-261AA |
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|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 120MA SOT-223 |
In Stock270 More on Order |
|
Series: SIPMOS® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V |
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V |
Vgs(th) (Max) @ Id: 1V @ 94µA |
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V |
FET Feature: Depletion Mode |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-SOT223-4 |
Package / Case: TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 120MA SOT-223 |
In Stock173 More on Order |
|
Series: SIPMOS® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V |
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V |
Vgs(th) (Max) @ Id: 1V @ 94µA |
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V |
FET Feature: Depletion Mode |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-SOT223-4 |
Package / Case: TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 120MA SOT-223 |
In Stock292 More on Order |
|
Series: SIPMOS® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V |
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V |
Vgs(th) (Max) @ Id: 1V @ 94µA |
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V |
FET Feature: Depletion Mode |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-SOT223-4 |
Package / Case: TO-261-4, TO-261AA |